Topological domain states and magnetoelectric properties in multiferroic nanostructures

Electric Field-Manipulated Optical Chirality in Ferroelectric Vortex Domains

Manipulating optical chirality via electric fields has garnered considerable attention in the realm of both fundamental physics and practical applications. Chiral ferroelectrics, characterized by their inherent optical chirality and switchable spontaneous polarization, are emerging as a promising platform for electronic-photonic integrated circuits applications. Unlike organics with chiral carbon centers, integrating chirality into technologically mature inorganic ferroelectrics has posed a long-standing challenge. Here, the successful introduction of chirality is reported into self-assembly La-doped BiFeO3 nanoislands, which exhibit ferroelectric vortex domains. By employing synergistic experimental techniques with piezoresponse force microscopy and nonlinear optical second-harmonic generation probes, a clear correlation between chirality and polarization configuration within these ferroelectric nanoislands is established. Furthermore, the deterministic control of ferroelectric vortex domains and chirality is demonstrated by applying electric fields, enabling reversible and nonvolatile generation and elimination of optically chiral signals. These findings significantly expand the repertoire of field-controllable chiral systems and lay the groundwork for the development of innovative ferroelectric optoelectronic devices.

Antiferroelectrics and Magnetoresistance in La0.5Sr0.5Fe12O19 Multiferroic System

The appearance of antiferroelectrics (AFE) in the ferrimagnetism (FM) system would give birth to a new type of multiferroic candidate, which is significant to the development of novel devices for energy storage. Here we demonstrate the realization of full antiferroelectrics in a magnetic La_0.5Sr_0.5Fe₁₂O₁₉ system (AFE+FM), which also presents a strong magnetodielectric response (MD) and magnetoresistance (MR) effect. The antiferroelectric phase was achieved at room temperature by replacing 0.5 Sr²⁺ ions with 0.5 La²⁺ ions in the SrFe₁₂O₁₉ compound, whose phase transition temperature of ferroelectrics (FE) to antiferroelectrics was brought down from 174 °C to -141 °C, while the temperature of antiferroelectrics converting to paraelectrics (PE) shifts from 490 °C to 234 °C after the substitution. The fully separated double P-E hysteresis loops reveal the antiferroelectrics in La_0.5Sr_0.5Fe₁₂O₁₉ ceramics. The magnitude of exerting magnetic field enables us to control the generation of spin current, which induces MD and MR effects. A 1.1T magnetic field induces a large spin current of 15.6 n A in La_0.5Sr_0.5Fe₁₂O₁₉ ceramics, lifts up dielectric constants by 540%, and lowers the resistance by -89%. The magnetic performance remains as usual. The multiple functions in one single phase allow us to develop novel intelligent devices.

Nonvolatile Ferroelectric-Domain-Wall Memory Embedded in a Complex Topological Domain Structure

The discovery and precise manipulation of atomic-size conductive ferroelectric domain walls offers new opportunities for a wide range of prospective electronic devices, and the emerging field of walltronics. Herein, a highly stable and fatigue-resistant nonvolatile memory device is demonstrated, which is based on deterministic creation and erasure of conductive domain walls that are geometrically confined in a topological domain structure. By introducing a pair of delicately designed coaxial electrodes onto the epitaxial BiFeO₃  film, a center-type quadrant topological domain with conductive charged domain walls can be easily created. More importantly, reversible switching of the quadrant domain between the convergent state with highly conductive confined walls and the divergent state with insulating confined walls can be realized, resulting in an apparent resistance change with a large on/off ratio of >10⁴  and a technically preferred readout current (up to 40 nA). Owing to restrictions from the clamped quadrant ferroelastic domain, the device exhibits excellent restoration repeatability over 10⁸  cycles and a long retention of over 12 days (>10⁶  s). These results provide a new pathway toward high-performance ferroelectric-domain-wall memory, which may spur extensive interest in exploring the immense potential in the emerging field of walltronics.

Two-dimensional characterization of three-dimensional magnetic bubbles in Fe3Sn2 nanostructures

We report differential phase contrast scanning transmission electron microscopy (TEM) of nanoscale magnetic objects in Kagome ferromagnet Fe3Sn2 nanostructures. This technique can directly detect the deflection angle of a focused electron beam, thus allowing clear identification of the real magnetic structures of two magnetic objects including three-ring and complex arch-shaped vortices in Fe3Sn2 by Lorentz-TEM imaging. Numerical calculations based on real material-specific parameters well reproduced the experimental results, showing that the magnetic objects can be attributed to integral magnetizations of two types of complex three-dimensional (3D) magnetic bubbles with depth-modulated spin twisting. Magnetic configurations obtained using the high-resolution TEM are generally considered as two-dimensional (2D) magnetic objects previously. Our results imply the importance of the integral magnetizations of underestimated 3D magnetic structures in 2D TEM magnetic characterizations.

Creating polar antivortex in PbTiO3/SrTiO3 superlattice

Nontrivial topological structures offer a rich playground in condensed matters and promise alternative device configurations for post-Moore electronics. While recently a number of polar topologies have been discovered in confined ferroelectric PbTiO3 within artificially engineered PbTiO3/SrTiO3 superlattices, little attention was paid to possible topological polar structures in SrTiO3. Here we successfully create previously unrealized polar antivortices within the SrTiO3 of PbTiO3/SrTiO3 superlattices, accomplished by carefully engineering their thicknesses guided by phase-field simulation. Field- and thermal-induced Kosterlitz-Thouless-like topological phase transitions have also been demonstrated, and it was discovered that the driving force for antivortex formation is electrostatic instead of elastic. This work completes an important missing link in polar topologies, expands the reaches of topological structures, and offers insight into searching and manipulating polar textures.

Quasi-one-dimensional metallic conduction channels in exotic ferroelectric topological defects

Ferroelectric topological objects provide a fertile ground for exploring emerging physical properties that could potentially be utilized in future nanoelectronic devices. Here, we demonstrate quasi-one-dimensional metallic high conduction channels associated with the topological cores of quadrant vortex domain and center domain (monopole-like) states confined in high quality BiFeO3 nanoislands, abbreviated as the vortex core and the center core. We unveil via the phase-field simulation that the superfine metallic conduction channels along the center cores arise from the screening charge carriers confined at the core region, whereas the high conductance of vortex cores results from a field-induced twisted state. These conducting channels can be reversibly created and deleted by manipulating the two topological states via electric field, leading to an apparent electroresistance effect with an on/off ratio higher than 103. These results open up the possibility of utilizing these functional one-dimensional topological objects in high-density nanoelectronic devices, e.g. nonvolatile memory.

Recent Progress on Topological Structures in Ferroic Thin Films and Heterostructures

Topological spin/polarization structures in ferroic materials continue to draw great attention as a result of their fascinating physical behaviors and promising applications in the field of high-density nonvolatile memories as well as future energy-efficient nanoelectronic and spintronic devices. Such developments have been made, in part, based on recent advances in theoretical calculations, the synthesis of high-quality thin films, and the characterization of their emergent phenomena and exotic phases. Herein, progress over the last decade in the study of topological structures in ferroic thin films and heterostructures is explored, including the observation of topological structures and control of their structures and emergent physical phenomena through epitaxial strain, layer thickness, electric, magnetic fields, etc. First, the evolution of topological spin structures (e.g., magnetic skyrmions) and associated functionalities (e.g., topological Hall effect) in magnetic thin films and heterostructures is discussed. Then, the exotic polar topologies (e.g., domain walls, closure domains, polar vortices, bubble domains, and polar skyrmions) and their emergent physical properties in ferroelectric oxide films and heterostructures are explored. Finally, a brief overview and prospectus of how the field may evolve in the coming years is provided.

Large electrostrain induced by reversible domain switching in ordered ferroelectric nanostructures with optimized geometric configurations

Large electromechanical response of ferroelectric materials is particularly appealing for applications in functional devices, such as sensors and actuators. For conventional ferroelectric materials, however, the mechanical strain under an external electric field, i.e. the electrostrain, is often limited by the intrinsic electromechanical property of the materials. Domain engineering has been suggested as a practical way to overcome this limitation and to enhance the electrostrain. Here, we show from phase-field simulations that reversible domain switching in ordered ferroelectric nanostructures with optimized geometric configurations can enhance the electrostrain significantly. In the presence of an external electric field, the domains in such nanostructures can switch from a multi-domain state confined by the geometric configurations to a mono-domain state. It is interesting that the domains can switch back to the multi-domain state due to strong internal depolarization fields once the electric field is removed. As a result, accompanying the reversible domain switching behavior, a large and reversible electrostrain can be obtained. Going further, it is found that the temperature dependence of the large electrostrain is similar to that of polarization in such nanostructures. The present work opens a perspective to obtaining large electrostrain in nanoscale ferroelectrics, which holds great promise for designing electromechanical functional devices with high performance.

Design and Manipulation of Ferroic Domains in Complex Oxide Heterostructures

The current burst of device concepts based on nanoscale domain-control in magnetically and electrically ordered systems motivates us to review the recent development in the design of domain engineered oxide heterostructures. The improved ability to design and control advanced ferroic domain architectures came hand in hand with major advances in investigation capacity of nanoscale ferroic states. The new avenues offered by prototypical multiferroic materials, in which electric and magnetic orders coexist, are expanding beyond the canonical low-energy-consuming electrical control of a net magnetization. Domain pattern inversion, for instance, holds promises of increased functionalities. In this review, we first describe the recent development in the creation of controlled ferroelectric and multiferroic domain architectures in thin films and multilayers. We then present techniques for probing the domain state with a particular focus on non-invasive tools allowing the determination of buried ferroic states. Finally, we discuss the switching events and their domain analysis, providing critical insight into the evolution of device concepts involving multiferroic thin films and heterostructures.