Structures and electronic properties of domain walls in BiFeO3 thin films

New-Generation Ferroelectric AlScN Materials

Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner. However, complementary metal oxide semiconductor compatibility and uniformity of ferroelectric performance after size scaling have always been two thorny issues hindering practical application of ferroelectric memory devices. The emerging ferroelectricity of wurtzite structure nitride offers opportunities to circumvent the dilemma. This review covers the mechanism of ferroelectricity and domain dynamics in ferroelectric AlScN films. The performance optimization of AlScN films grown by different techniques is summarized and their applications for memories and emerging in-memory computing are illustrated. Finally, the challenges and perspectives regarding the commercial avenue of ferroelectric AlScN are discussed.

Temporal and spatial tracking of ultrafast light-induced strain and polarization modulation in a ferroelectric thin film

Ultrashort light pulses induce rapid deformations of crystalline lattices. In ferroelectrics, lattice deformations couple directly to the polarization, which opens the perspective to modulate the electric polarization on an ultrafast time scale. Here, we report on the temporal and spatial tracking of strain and polar modulation in a single-domain BiFeO3 thin film by ultrashort light pulses. To map the light-induced deformation of the BiFeO3 unit cell, we perform time-resolved optical reflectivity and time-resolved x-ray diffraction. We show that an optical femtosecond laser pulse generates not only longitudinal but also shear strains. The longitudinal strain peaks at a large amplitude of 0.6%. The access of both the longitudinal and shear strains enables to quantitatively reconstruct the ultrafast deformation of the unit cell and to infer the corresponding reorientation of the ferroelectric polarization direction in space and time. Our findings open new perspectives for ultrafast manipulation of strain-coupled ferroic orders.

Two-dimensional (n = 1) ferroelectric film solar cells

Molecular ferroelectrics that have excellent ferroelectric properties, a low processing temperature, narrow bandgap, and which are lightweight, have shown great potential in the photovoltaic field. However, two-dimensional (2D) perovskite solar cells with high tunability, excellent photo-physical properties and superior long-term stability are limited by poor out-of-plane conductivity from intrinsic multi-quantum-well electronic structures. This work uses 2D molecular ferroelectric film as the absorbing layer to break the limit of multiple quantum wells. Our 2D ferroelectric solar cells achieve the highest open-circuit voltage (1.29 V) and the best efficiency (3.71%) among the 2D (n = 1) Ruddlesden-Popper perovskite solar cells due to the enhanced out-of-plane charge transport induced by molecular ferroelectrics with a strong saturation polarization, high Curie temperature and multiaxial characteristics. This work aims to break the inefficient out-of-plane charge transport caused by the limit of the multi-quantum-well electronic structure and improve the efficiency of 2D ferroelectric solar cells.

Achieving High-Temperature Multiferroism by Atomic Architecture

Materials with multiple order parameters, typically, in which ferroelectricity and magnetism are coupled, are illuminative for next-generation multifunctional electronics. However, searching for such single-phase multiferroics is challenging owing to antagonistic orbital occupancy and chemical bonding requirements for polarity and magnetism. Appropriate multiferroic candidates have been proposed, but their practical implementation is impeded by the low working temperature, weak coupling between ferroic orders, or antiparallel spin alignment in magnetic sublattices. Here, we report a family of single-phase multiferroic materials in which high-temperature magnetism and voltage-switchable ferroelectricity are coupled. Using pulsed laser deposition, we have fabricated single-crystalline thin films incorporating a uniformly percolated open-shell dⁿ framework, which are composed of Fe cations with B-site occupancy and exhibit long-range spin ordering into the displacive ferroelectric PbTiO₃ lattice, as demonstrated by atomically resolved chemical analysis. The tetragonal polar Pb(Ti_1-x,Fe_x)O₃ (PFT(x), x ≤ 0.10) family exhibits a switchable ferroelectric nature and magnetic interaction with a moderate coercive field of around 300 Oe at room temperature. Notably, the magnetic order even persists above 500 K, which is higher than already reported potential multiferroic candidates until now. Our strategy of merging a spin-ordered sublattice into inherent ferroelectrics via atomic occupancy engineering provides an available pathway for highly thermally stable multiferroic and spintronic applications.

Ferroelectric hybrid organic-inorganic perovskites and their structural and functional diversity

Molecular ferroelectrics have gradually aroused great interest in both fundamental scientific research and technological applications because of their easy processing, light weight and mechanical flexibility. Hybrid organic-inorganic perovskite ferroelectrics (HOIPFs), as a class of molecule-based ferroelectrics, have diverse functionalities owing to their unique structure and have become a hot spot in molecular ferroelectrics research. Therefore, they are extremely attractive in the field of ferroelectrics. However, there seems to be a lack of systematic review of their design, performance and potential applications. Herein, we review the recent development of HOIPFs from lead-based, lead-free and metal-free perovskites, and outline the versatility of these ferroelectrics, including piezoelectricity for mechanical energy-harvesting and optoelectronic properties for photovoltaics and light detection. Furthermore, a perspective view of the challenges and future directions of HOIPFs is also highlighted.

Photovoltaic properties in an orthorhombic Fe doped KTN single crystal

Since the domain wall photovoltaic effect (DW-PVE) is reported in BiFeO₃ film, the investigations on photovoltaic properties in ferroelectrics have appealed more and more attention. In this work, we employed two Fe doped KTa_1-xNbxO₃ (Fe:KTN) single crystals in tetragonal phase and orthorhombic phase, respectively, possessing similar net polarization along [001]_C direction, to quantize the contribution on photovoltaic properties from bulk photovoltaic effect (BPVE) and DW-PVE in Fe:KTN. The results show that there are significant enhancements of open-circuit voltages (V_OC = -6.0 V, increases over 440%) and short-circuit current density (J_SC = 18.5 nA cm^-2, increases over 1580%) in orthorhombic Fe:KTN with engineer-domain structure after poled, corresponding to 14.2 mV and 2.2 mV for the single domain wall and bulk region under illumination of 405 nm light (100 mW). It reveals that DW-PVE plays a major role in KTN-based ferroelectrics, indicating an orthorhombic Fe:KTN single crystal is one of the potential photovoltaic materials.