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Zhang Y, Zhu Q, Tian B, Duan C. New-Generation Ferroelectric AlScN Materials. NANO-MICRO LETTERS 2024; 16:227. [PMID: 38918252 PMCID: PMC11199478 DOI: 10.1007/s40820-024-01441-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2024] [Accepted: 05/06/2024] [Indexed: 06/27/2024]
Abstract
Ferroelectrics have great potential in the field of nonvolatile memory due to programmable polarization states by external electric field in nonvolatile manner. However, complementary metal oxide semiconductor compatibility and uniformity of ferroelectric performance after size scaling have always been two thorny issues hindering practical application of ferroelectric memory devices. The emerging ferroelectricity of wurtzite structure nitride offers opportunities to circumvent the dilemma. This review covers the mechanism of ferroelectricity and domain dynamics in ferroelectric AlScN films. The performance optimization of AlScN films grown by different techniques is summarized and their applications for memories and emerging in-memory computing are illustrated. Finally, the challenges and perspectives regarding the commercial avenue of ferroelectric AlScN are discussed.
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Affiliation(s)
- Yalong Zhang
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Qiuxiang Zhu
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China.
| | - Bobo Tian
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China.
| | - Chungang Duan
- Key Laboratory of Polar Materials and Devices, Ministry of Education, Shanghai Center of Brain-Inspired Intelligent Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, Shanxi, People's Republic of China
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Gu R, Juvé V, Laulhé C, Bouyanfif H, Vaudel G, Poirier A, Dkhil B, Hollander P, Paillard C, Weber MC, Sando D, Fusil S, Garcia V, Ruello P. Temporal and spatial tracking of ultrafast light-induced strain and polarization modulation in a ferroelectric thin film. SCIENCE ADVANCES 2023; 9:eadi1160. [PMID: 37967179 PMCID: PMC10651133 DOI: 10.1126/sciadv.adi1160] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2023] [Accepted: 10/16/2023] [Indexed: 11/17/2023]
Abstract
Ultrashort light pulses induce rapid deformations of crystalline lattices. In ferroelectrics, lattice deformations couple directly to the polarization, which opens the perspective to modulate the electric polarization on an ultrafast time scale. Here, we report on the temporal and spatial tracking of strain and polar modulation in a single-domain BiFeO3 thin film by ultrashort light pulses. To map the light-induced deformation of the BiFeO3 unit cell, we perform time-resolved optical reflectivity and time-resolved x-ray diffraction. We show that an optical femtosecond laser pulse generates not only longitudinal but also shear strains. The longitudinal strain peaks at a large amplitude of 0.6%. The access of both the longitudinal and shear strains enables to quantitatively reconstruct the ultrafast deformation of the unit cell and to infer the corresponding reorientation of the ferroelectric polarization direction in space and time. Our findings open new perspectives for ultrafast manipulation of strain-coupled ferroic orders.
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Affiliation(s)
- Ruizhe Gu
- Institut des Molécules et Matériaux du Mans, UMR 6283 CNRS, Le Mans Université, 72085 Le Mans, France
| | - Vincent Juvé
- Institut des Molécules et Matériaux du Mans, UMR 6283 CNRS, Le Mans Université, 72085 Le Mans, France
| | - Claire Laulhé
- Synchrotron SOLEIL, L’Orme des Merisiers, Université Paris Saclay, 91190 Saint-Aubin, France
- Université Paris-Saclay, CNRS UMR8502, Laboratoire de Physique des Solides, 91405, Orsay, France
| | - Houssny Bouyanfif
- Laboratoire de Physique de la Matière Condensée, UR2081, Université Jules Vernes Picardie, 80000 Amiens, France
| | - Gwenaëlle Vaudel
- Institut des Molécules et Matériaux du Mans, UMR 6283 CNRS, Le Mans Université, 72085 Le Mans, France
| | - Aurélie Poirier
- Institut des Molécules et Matériaux du Mans, UMR 6283 CNRS, Le Mans Université, 72085 Le Mans, France
| | - Brahim Dkhil
- Université Paris-Saclay, CentraleSupélec, CNRS-UMR8580, Laboratoire Structures, Propriétés et Modélisation des Solides, Gif-sur-Yvette, France
| | - Philippe Hollander
- Synchrotron SOLEIL, L’Orme des Merisiers, Université Paris Saclay, 91190 Saint-Aubin, France
| | - Charles Paillard
- Université Paris-Saclay, CentraleSupélec, CNRS-UMR8580, Laboratoire Structures, Propriétés et Modélisation des Solides, Gif-sur-Yvette, France
- University of Arkansas, Physics Department, 825 W Dickson St., Fayetteville, AR 72701, USA
| | - Mads C. Weber
- Institut des Molécules et Matériaux du Mans, UMR 6283 CNRS, Le Mans Université, 72085 Le Mans, France
| | - Daniel Sando
- School of Materials Science and Engineering, UNSW Sydney, Kensington 2052, Australia
- School of Physical and Chemical Sciences, University of Canterbury, Christchurch 8410 New Zealand
| | - Stéphane Fusil
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, Palaiseau 91767, France
| | - Vincent Garcia
- Unité Mixte de Physique CNRS, Thales, Université Paris-Saclay, Palaiseau 91767, France
| | - Pascal Ruello
- Institut des Molécules et Matériaux du Mans, UMR 6283 CNRS, Le Mans Université, 72085 Le Mans, France
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Wang C, Gu J, Li J, Cai J, Li L, Yao J, Lu Z, Wang X, Zou G. Two-dimensional (n = 1) ferroelectric film solar cells. Natl Sci Rev 2023; 10:nwad061. [PMID: 37600562 PMCID: PMC10434298 DOI: 10.1093/nsr/nwad061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/25/2022] [Revised: 02/23/2023] [Accepted: 02/27/2023] [Indexed: 08/22/2023] Open
Abstract
Molecular ferroelectrics that have excellent ferroelectric properties, a low processing temperature, narrow bandgap, and which are lightweight, have shown great potential in the photovoltaic field. However, two-dimensional (2D) perovskite solar cells with high tunability, excellent photo-physical properties and superior long-term stability are limited by poor out-of-plane conductivity from intrinsic multi-quantum-well electronic structures. This work uses 2D molecular ferroelectric film as the absorbing layer to break the limit of multiple quantum wells. Our 2D ferroelectric solar cells achieve the highest open-circuit voltage (1.29 V) and the best efficiency (3.71%) among the 2D (n = 1) Ruddlesden-Popper perovskite solar cells due to the enhanced out-of-plane charge transport induced by molecular ferroelectrics with a strong saturation polarization, high Curie temperature and multiaxial characteristics. This work aims to break the inefficient out-of-plane charge transport caused by the limit of the multi-quantum-well electronic structure and improve the efficiency of 2D ferroelectric solar cells.
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Affiliation(s)
- Chen Wang
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215000, China
- College of Mechanical and Electronic Engineering, Shandong University of Science and Technology, Qingdao 266590, China
| | - Jiahao Gu
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215000, China
| | - Jun Li
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215000, China
| | - Jianyu Cai
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215000, China
| | - Lutao Li
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215000, China
| | - Junjie Yao
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215000, China
| | - Zheng Lu
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215000, China
| | - Xiaohan Wang
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215000, China
| | - Guifu Zou
- College of Energy, Soochow Institute for Energy and Materials Innovations, and Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou 215000, China
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Cao Y, Tang YL, Zhu YL, Wang Y, Liu N, Zou MJ, Liu J, Feng YP, Geng WR, Ma XL. Achieving High-Temperature Multiferroism by Atomic Architecture. ACS APPLIED MATERIALS & INTERFACES 2023; 15:3163-3171. [PMID: 36621962 DOI: 10.1021/acsami.2c20122] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Materials with multiple order parameters, typically, in which ferroelectricity and magnetism are coupled, are illuminative for next-generation multifunctional electronics. However, searching for such single-phase multiferroics is challenging owing to antagonistic orbital occupancy and chemical bonding requirements for polarity and magnetism. Appropriate multiferroic candidates have been proposed, but their practical implementation is impeded by the low working temperature, weak coupling between ferroic orders, or antiparallel spin alignment in magnetic sublattices. Here, we report a family of single-phase multiferroic materials in which high-temperature magnetism and voltage-switchable ferroelectricity are coupled. Using pulsed laser deposition, we have fabricated single-crystalline thin films incorporating a uniformly percolated open-shell dn framework, which are composed of Fe cations with B-site occupancy and exhibit long-range spin ordering into the displacive ferroelectric PbTiO3 lattice, as demonstrated by atomically resolved chemical analysis. The tetragonal polar Pb(Ti1-x,Fex)O3 (PFT(x), x ≤ 0.10) family exhibits a switchable ferroelectric nature and magnetic interaction with a moderate coercive field of around 300 Oe at room temperature. Notably, the magnetic order even persists above 500 K, which is higher than already reported potential multiferroic candidates until now. Our strategy of merging a spin-ordered sublattice into inherent ferroelectrics via atomic occupancy engineering provides an available pathway for highly thermally stable multiferroic and spintronic applications.
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Affiliation(s)
- Yi Cao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Yun-Long Tang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
| | - Yin-Lian Zhu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
| | - Yujia Wang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
| | - Nan Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Min-Jie Zou
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Jiaqi Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Wenhua Road 72, Shenyang 110016, China
| | - Yan-Peng Feng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Wan-Rong Geng
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Xiu-Liang Ma
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016, China
- Bay Area Center for Electron Microscopy, Songshan Lake Materials Laboratory, Dongguan 523808, Guangdong, China
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
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Zhang T, Xu K, Li J, He L, Fu DW, Ye Q, Xiong RG. Ferroelectric hybrid organic-inorganic perovskites and their structural and functional diversity. Natl Sci Rev 2022; 10:nwac240. [PMID: 36817836 PMCID: PMC9935996 DOI: 10.1093/nsr/nwac240] [Citation(s) in RCA: 24] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2022] [Revised: 07/25/2022] [Accepted: 09/29/2022] [Indexed: 01/06/2023] Open
Abstract
Molecular ferroelectrics have gradually aroused great interest in both fundamental scientific research and technological applications because of their easy processing, light weight and mechanical flexibility. Hybrid organic-inorganic perovskite ferroelectrics (HOIPFs), as a class of molecule-based ferroelectrics, have diverse functionalities owing to their unique structure and have become a hot spot in molecular ferroelectrics research. Therefore, they are extremely attractive in the field of ferroelectrics. However, there seems to be a lack of systematic review of their design, performance and potential applications. Herein, we review the recent development of HOIPFs from lead-based, lead-free and metal-free perovskites, and outline the versatility of these ferroelectrics, including piezoelectricity for mechanical energy-harvesting and optoelectronic properties for photovoltaics and light detection. Furthermore, a perspective view of the challenges and future directions of HOIPFs is also highlighted.
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Affiliation(s)
| | | | - Jie Li
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing211189, China
| | - Lei He
- Jiangsu Key Laboratory for Science and Applications of Molecular Ferroelectrics, Southeast University, Nanjing211189, China
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Huang F, Hu C, Xian Z, Sun X, Zhou Z, Meng X, Tan P, Zhang Y, Huang X, Wang Y, Tian H. Photovoltaic properties in an orthorhombic Fe doped KTN single crystal. OPTICS EXPRESS 2020; 28:34754-34760. [PMID: 33182936 DOI: 10.1364/oe.409750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2020] [Accepted: 10/22/2020] [Indexed: 06/11/2023]
Abstract
Since the domain wall photovoltaic effect (DW-PVE) is reported in BiFeO3 film, the investigations on photovoltaic properties in ferroelectrics have appealed more and more attention. In this work, we employed two Fe doped KTa1-xNbxO3 (Fe:KTN) single crystals in tetragonal phase and orthorhombic phase, respectively, possessing similar net polarization along [001]C direction, to quantize the contribution on photovoltaic properties from bulk photovoltaic effect (BPVE) and DW-PVE in Fe:KTN. The results show that there are significant enhancements of open-circuit voltages (VOC = -6.0 V, increases over 440%) and short-circuit current density (JSC = 18.5 nA cm-2, increases over 1580%) in orthorhombic Fe:KTN with engineer-domain structure after poled, corresponding to 14.2 mV and 2.2 mV for the single domain wall and bulk region under illumination of 405 nm light (100 mW). It reveals that DW-PVE plays a major role in KTN-based ferroelectrics, indicating an orthorhombic Fe:KTN single crystal is one of the potential photovoltaic materials.
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