Gamma-ray rejection, or detection, with gadolinium as a converter

Equivalent circuit of a silicon-lithium p-i-n nuclear radiation detector

Nuclear radiation detectors are indispensable for research in the field of nuclear radiation, X-ray spectroscopy and other areas. Interest in silicon p-i-n detectors of nuclear radiation is increasing today due to the possibility of their operation under normal conditions. In this paper, an equivalent circuit of a silicon-lithium p-i-n nuclear radiation detector is proposed. The proposed circuit is obtained using the classical Shockley equation for silicon semiconductors and the telegraph equations. The parameters of the equivalent circuit were determined using the multiple regression method. As a result of simulation of the model in the MATLAB Simulink graphical development environment, the amplitude-frequency and phase-frequency characteristics of the proposed model were obtained. Using the Monte Carlo method, the alpha-decay of the uranium isotope [Formula: see text], thorium isotope [Formula: see text] and americium isotope [Formula: see text] the alpha-decay spectrum was obtained. Obtained alpha-decay spectra coincides with the experimental data, presented in previous works of other authors.

Analysis of a neutron-induced conversion electron spectrum of gadolinium

A 100-nm-thick gadolinium layer deposited on a pixelated silicon sensor was activated in a neutron field to measure the internal conversion electron (ICE) spectrum generated by neutron capture products of ¹⁵⁵Gd and ¹⁵⁷Gd. The experiment was performed at the ISIS neutron and muon facility, using a bespoke version of the HEXITEC spectroscopic imaging camera. Signals originating from internal conversion electrons, Auger electrons, x rays and gamma rays up to 150 keV were identified. The ICE spectrum has an energy resolution of 1.8-1.9 keV at 72 keV and shows peaks from the K, L, M, N+ ICEs of the 79.51 keV and 88.967 keV 2⁺-0⁺ gamma transitions from the first excited states in ¹⁵⁸Gd and ¹⁵⁶Gd, respectively, as well as the K ICEs of the 4⁺-2⁺ transitions at 181.931 keV and 199.213 keV from the respective second excited states. Spectrum analysis was performed using a convolution of a Gaussian with exponential functions at the low and high energy side as the peak shaping function. Relative ICE intensities were derived from the fitted peak areas and compared with internal conversion coefficient (ICC) values calculated from the BrIcc database. Relative to the dominant L shell contribution, the K ICE intensity conforms to BrIcc and the M, N, O+ ICE intensities are somewhat higher than expected.

Microfabrication of a gadolinium-derived solid-state sensor for thermal neutrons

Neutron sensing is critical in civilian and military applications. Conventional neutron sensors are limited by size, weight, cost, portability and helium supply. Here the microfabrication of gadolinium (Gd) conversion material-based heterojunction diodes for detecting thermal neutrons using electrical signals produced by internal conversion electrons (ICEs) is described. Films with negligible stress were produced at the tensile-compressive crossover point, enabling Gd coatings of any desired thickness by controlling the radiofrequency sputtering power and using the zero-point near p(Ar) of 50 mTorr at 100 W. Post-deposition Gd oxidation-induced spallation was eliminated by growing a residual stress-free 50 nm neodymium-doped aluminum cap layer atop Gd. The resultant coatings were stable for at least 6 years, demonstrating excellent stability and product shelf-life. Depositing Gd directly on the diode surface eliminated the air gap, leading to a 200-fold increase in electron capture efficiency and facilitating monolithic microfabrication. The conversion electron spectrum was dominated by ICEs with energies of 72, 132 and 174 keV. Results are reported for neutron reflection and moderation by polyethylene for enhanced sensitivity, and γ- and X-ray elimination for improved specificity. The optimal Gd thickness was 10.4 μm for a 300 μm-thick partially depleted diode of 300 mm2 active surface area. Fast detection (within 10 min) at a neutron source-to-diode distance of 11.7 cm was achieved with this configuration. All ICE energies along with γ-ray and Kα,β X-rays were modeled to emphasize correlations between experiment and theory. Semi-conductor thermal neutron detectors offer advantages for field-sensing of radioactive neutron sources.