Ultrafast near-field spectroscopy of single semiconductor quantum dots

Near-field visualization of dynamical processes of semiconductor surface

The near-field images calculation method for semiconductor surface with inhomogeneous electron distribution, formed by strong focused laser pulse, was proposed. Calculation is performed using Green function method. The main characteristic of the proposed approach is maximal usage analytical computations. The near-field images for the surface of GaAs were obtained at different points of time. Developed approach is universal and could be able to find with experimental data on time-resolved near-field microscopy some parameters of semiconductor surface such as diffusion constant and relaxation time.

Structural phase contrast in polycrystalline organic semiconductor films observed by broadband near-field optical spectroscopy

We demonstrate a novel near-field absorption spectrometer with 100 nm spatial resolution based on an ultrabroadband Ti:sapphire oscillator coupled to an aperture NSOM, enabling the measurement of nanoscale absorption spectra. The instrument is particularly suited for structural phase-selective imaging of organic materials at the nanoscale. We demonstrate that variations in the local absorption spectrum allow us to distinguish between the crystalline and the amorphous phases in polycrystalline phtalocyanine films, thus providing previously unavailable information on their mesoscopic texture.

Near-field microscopy and lithography of light-emitting polymers

We describe the application of scanning near-field optical microscopy (SNOM) to the study of the photophysical and self-organization properties of thin films of blends of conjugated polymers, and also to the lateral nanoscale patterning of conjugated-polymer structures. Such thin-film plastic semiconductor nanostructures offer significant potential for use in opto-electronic devices. The implementation of SNOM we employ is the most established form in which a probe with a sub-wavelength aperture is scanned in close proximity to the sample surface. We consider the nature of the near-field optical distribution, which decays within the first ca. 100 nm of these semiconductor materials, and address the identification of topographic artefacts in near-field optical images. While the topographic information obtained simultaneously with optical data in any SNOM experiment enables an easy comparison with the higher-resolution tapping-mode atomic force microscopy, the spectroscopic contrast provided by fluorescence SNOM gives an unambiguous chemical identification of the different phases in a conjugated-polymer blend. Both fluorescence and photoconductivity SNOM indicate that intermixing of constituent polymers in a blend, or nanoscale phase separation, is responsible for the high efficiency of devices employing these materials as their active layer. We also demonstrate a scheme for nano-optical lithography with SNOM of conjugated-polymer structures, which has been employed successfully for the fabrication of poly(-phenylene vinylene) nanostructures with 160 nm feature sizes.