Berry’s phase and quantization in topological insulators

Probing the topological surface states in superconducting Sn4Au single crystal: a magneto transport study

Materials exhibiting bulk superconductivity along with magnetoresistance (MR) in their normal state have emerged as suitable candidates for topological superconductivity. In this article, we report a flux free method to synthesize single crystal of topological superconductor candidate Sn₄Au. The phase purity and single crystalline nature are confirmed through various characterizations viz. x-ray diffraction, field emission scanning electron microscopy, selected area electron diffraction, and transmission electron microscopy. Chemical states of the constituent element viz. Sn and Au are analysed through x-ray photoelectron spectroscopy. Superconductivity in synthesized Sn₄Au single crystal is evident formρ-Tplot, for which the critical field (H_c) is determined throughρ-Hplot at 2 K i.e. just below critical temperatureT_c. A positive MR is observed inρ-Hmeasurements at different temperatures aboveT_c, viz. at 3 K, 5 K, 10 K and 20 K. Further, the magnetoconductivity (MC) is analysed by using Hikami-Larkin-Nagaoka formalism, which signifies the presence of weak antilocalization (WAL) effect in Sn₄Au. Angle dependent magneto-transport measurement has been performed to detect the origin of observed WAL effect in Sn₄Au single crystal. Normalized MC vsHcosθplot shows presence of topological surface states in the studied system. It is evident that Sn₄Au is a 2.6 K topological superconductor.

Omnipresence of Weak Antilocalization (WAL) in Bi2Se3 Thin Films: A Review on Its Origin

Topological insulators are materials with time-reversal symmetric states of matter in which an insulating bulk is surrounded by protected Dirac-like edge or surface states. Among topological insulators, Bi2Se3 has attracted special attention due to its simple surface band structure and its relatively large band gap that should enhance the contribution of its surface to transport, which is usually masked by the appearance of defects. In order to avoid this difficulty, several features characteristic of topological insulators in the quantum regime, such as the weak-antilocalization effect, can be explored through magnetotransport experiments carried out on thin films of this material. Here, we review the existing literature on the magnetotransport properties of Bi2Se3 thin films, paying thorough attention to the weak-antilocalization effect, which is omnipresent no matter the film quality. We carefully follow the different situations found in reported experiments, from the most ideal situations, with a strong surface contribution, towards more realistic cases where the bulk contribution dominates. We have compared the transport data found in literature to shed light on the intrinsic properties of Bi2Se3, finding a clear relationship between the mobility and the phase coherence length of the films that could trigger further experiments on transport in topological systems.

Fluctuation-Induced Torque on a Topological Insulator out of Thermal Equilibrium

Topological insulators with the time reversal symmetry broken exhibit strong magnetoelectric and magneto-optic effects. While these effects are well understood in or near equilibrium, nonequilibrium physics is richer yet less explored. We consider a topological insulator thin film, weakly coupled to a ferromagnet, out of thermal equilibrium with a cold environment (quantum electrodynamics vacuum). We show that the heat flow to the environment is strongly circularly polarized, thus carrying away angular momentum and exerting a purely fluctuation-driven torque on the topological insulator film. Utilizing the Keldysh framework, we investigate the universal nonequilibrium response of the TI to the temperature difference with the environment. Finally, we argue that experimental observation of this effect is within reach.

Visualizing electronic chirality and Berry phases in graphene systems using photoemission with circularly polarized light

Electronic chirality near the Dirac point is a key property of graphene systems, which is revealed by the spectral intensity patterns as measured by angle-resolved photoemission spectroscopy under various polarization conditions. Specifically, the strongly modulated circular patterns for monolayer (bilayer) graphene rotate by ±90° (±45°) in changing from linearly to circularly polarized light; these angles are directly related to the phases of the wave functions and thus visually confirm the Berry's phase of π (2π) around the Dirac point. The details are verified by calculations.