Broadband optical ultrafast reflectivity of Si, Ge and GaAs

Ultrafast optical reflectivity measurements of silicon, germanium, and gallium arsenide have been carried out using an advanced set-up providing intense subpicosecond pulses (35 fs FWHM, $$\lambda $$ λ = 400 nm) as a pump and broadband 340–780 nm ultrafast pulses as a white supercontinuum probe. Measurements have been performed for selected pump fluence conditions below the damage thresholds, that were carefully characterized. The obtained fluence damage thresholds are 30, 20.8, 9.6 mJ/$$\hbox {cm}^2$$ cm 2 for Si, Ge and GaAs respectively. Ultrafast reflectivity patterns show clear differences in the Si, Ge, and GaAs trends both for the wavelength and time dependences. Important changes were observed near the wavelength regions corresponding to the $$E_1$$ E 1 , $$E_1+\Delta $$ E 1 + Δ singularities in the joint density of states, so related to the peculiar band structure of the three systems. For Ge, ultrafast reflectivity spectra were also collected at low temperature (down to 80 K) showing a shift of the characteristic doublet peak around 2.23 eV and a reduction of the recovery times.

Atomic scale study of corrugating and anticorrugating states on the bare Si(1 0 0) surface

In this article, we study the origin of the corrugating and anticorrugating states through the electronic properties of the Si(1 0 0) surface via a low-temperature (9 K) scanning tunneling microscope (STM). Our study is based on the analysis of the STM topographies corrugation variations when related to the shift of the local density of states (LDOS) maximum in the [Formula: see text] direction. Our experimental results are correlated with numerical simulations using the density-functional theory with hybrid Heyd-Scuseria-Ernzerhof (HSE06) functional to simulate the STM topographies, the projected density of states variations at different depths in the silicon surface as well as the three dimensional partial charge density distributions in real-space. This work reveals that the Si(1 0 0) surface exhibits two anticorrugating states at +0.8 and +2.8 V that are associated with a phase shift of the LDOS maximum in the unoccupied states STM topographies. By comparing the calculated data with our experimental results, we have been able to identify the link between the variations of the STM topographies corrugation and the shift of the LDOS maximum observed experimentally. Each surface voltage at which the STM topographies corrugation drops is defined as anticorrugating states. In addition, we have evidenced a sharp jump in the tunnel current when the second LDOS maximum shift is probed, whose origin is discussed and associated with the presence of Van Hove singularities.

The origin of the pseudogap in α-Ga

Density functional theory, the free-electron empty lattice approximation and the nearly free-electron approximation are employed to investigate the electronic properties of partially covalent α-Ga. Whereas free-electron-like properties are revealed over a large energy range, a deep pseudogap at the Fermi level is characteristic of α-Ga. We explain the origin of the pseudogap in terms of a delicate interplay between the electronic states and the specific Brillouin zone geometry.