Chow KH, Kiefl RF, Hitti B, Estle TL, Lichti RL. Novel behavior of bond-centered muonium in heavily doped n-type silicon: Curie-like spin susceptibility and charge screening.
PHYSICAL REVIEW LETTERS 2000;
84:2251-2254. [PMID:
11017256 DOI:
10.1103/physrevlett.84.2251]
[Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/1999] [Indexed: 05/23/2023]
Abstract
Bond-centered muonium ( Mu(0)(BC)) has been observed in very heavily doped n-type Si:P. It exhibits a Curie-like electronic spin susceptibility which leads to a giant negative shift in the muon spin precession frequency. At high dopant levels, the Mu(0)(BC) hyperfine parameters, deduced from a model involving spin exchange with free carriers, are significantly reduced from those in intrinsic Si. This indicates that the spin density distribution for Mu(0)(BC) in metallic Si:P is altered significantly by charge screening effects, likely a general phenomenon for deep impurities in materials with high carrier concentrations.
Collapse