Kinetics of relaxation and recombination of nonequilibrium carriers in GaAs: Carrier capture by impurities

Effect of surface gallium termination on the formation and emission energy of an InGaAs wetting layer during the growth of InGaAs quantum dots by droplet epitaxy

Self-assembled quantum dots (QDs) based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer (WL) which forms during the Stranski-Krastanov growth of QDs can limit their performance. Here, we investigate WL formation during QD growth by the droplet epitaxy technique. We use a combination of photoluminescence excitation spectroscopy, lifetime measurements, and transmission electron microscopy to identify the presence of an InGaAs WL in these droplet epitaxy QDs, even in the absence of distinguishable WL luminescence. We observe that increasing the amount of Ga deposited on a GaAs (100) surface prior to the growth of InGaAs QDs leads to a significant reduction in the emission wavelength of the WL to the point where it can no longer be distinguished from the GaAs acceptor peak emission in photoluminescence measurements. However increasing the amount of Ga deposited does not suppress the formation of a WL under the growth conditions used here.

Planck's generalised radiation law and its implications for cathodoluminescence spectra

Cathodoluminescence (CL) is an important analytical technique for probing the optical properties of materials at high spatial resolution. Interpretation of CL spectra is however complicated by the fact that the spectrum depends on the carrier injection density of the incident electron beam. Here a generalised version of Planck's radiation law is used to uncover the evolution of CL spectra with injection under steady-state conditions. The importance of the quasi-Fermi level is highlighted and it is shown that steady-state luminescence is suppressed when the carrier distributions undergo a population inversion. The theory is consistent with some well-known luminescence phenomena, such as the blue shifting of donor-acceptor pair transitions with increased injection, and its predictions are experimentally verified on CdTe and GaN, which are exemplar thin-film solar cell and light emitting diode materials respectively. Furthermore, the discussion is broadened to include pulsed illumination in time resolved CL, where the carrier distribution is dynamically evolving with time.

Long Lifetime Hole Traps at Grain Boundaries in CdTe Thin-Film Photovoltaics

A novel time-resolved cathodoluminescence method, where a pulsed electron beam is generated via the photoelectric effect, is used to probe individual CdTe grain boundaries. Excitons have a short lifetime (≤100 ps) within the grains and are rapidly quenched at the grain boundary. However, a ~47 meV shallow acceptor, believed to be due to oxygen, can act as a long lifetime hole trap, even at the grain boundaries where their concentration is higher. This provides direct evidence supporting recent observations of hopping conduction across grain boundaries in highly doped CdTe at low temperature.

Prospects for electron microscopy characterisation of solar cells: opportunities and challenges

Several electron microscopy techniques available for characterising thin-film solar cells are described, including recent advances in instrumentation, such as aberration-correction, monochromators, time-resolved cathodoluminescence and focused ion-beam microscopy. Two generic problems in thin-film solar cell characterisation, namely electrical activity of grain boundaries and 3D morphology of excitionic solar cells, are also discussed from the standpoint of electron microscopy. The opportunities as well as challenges facing application of these techniques to thin-film and excitonic solar cells are highlighted.