Jiang Y, Ermolaev M, Kipshidze G, Moon S, Ozerov M, Smirnov D, Jiang Z, Suchalkin S. Giant g-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices.
Nat Commun 2022;
13:5960. [PMID:
36216829 PMCID:
PMC9551044 DOI:
10.1038/s41467-022-33560-x]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/13/2021] [Accepted: 09/16/2022] [Indexed: 11/30/2022] Open
Abstract
Realizing a large Landé g-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value of g ≈ 104, twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields. In addition, we show that the g-factor can be tuned on demand from 20 to 110 via varying the SL period. The key ingredients of such a wide tunability are the wavefunction mixing and overlap between the electron and hole states, which have drawn little attention in prior studies. Our work not only establishes metamorphic InAsSb/InSb as a promising and competitive material platform for future quantum devices but also provides a new route toward g-factor engineering in semiconductor structures.
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