Relativistic and core-relaxation effects on the energy bands of gallium arsenide and germanium

On the use of DFT+U to describe the electronic structure of TiO2 nanoparticles: (TiO2)35 as a case study

One of the main drawbacks in the density functional theory (DFT) formalism is the underestimation of the energy gaps in semiconducting materials. The combination of DFT with an explicit treatment of the electronic correlation with a Hubbard-like model, known as the DFT+U method, has been extensively applied to open up the energy gap in materials. Here, we introduce a systematic study where the selection of the U parameter is analyzed considering two different basis sets: plane-waves and numerical atomic orbitals (NAOs), together with different implementations for including U, to investigate the structural and electronic properties of a well-defined bipyramidal (TiO₂)₃₅ nanoparticle. This study reveals, as expected, that a certain U value can reproduce the experimental value for the energy gap. However, there is a high dependence on the choice of basis set and on the U parameter employed. The present study shows that the linear combination of the NAO basis functions, as implemented in Fritz Haber Institute ab initio molecular simulation (FHI-aims), requires, requires a lower U value than the simplified rotationally invariant approach, as implemented in the Vienna ab initio simulation package (VASP). Therefore, the transfer of U values between codes is unfeasible and not recommended, demanding initial benchmark studies for the property of interest as a reference to determine the appropriate value of U.

229Thorium-doped calcium fluoride for nuclear laser spectroscopy

The (229)thorium isotope presents an extremely low-energy isomer state of the nucleus which is expected around 7.8 eV, in the vacuum ultraviolet (VUV) regime. This unique system may bridge between atomic and nuclear physics, enabling coherent manipulation and precision spectroscopy of nuclear quantum states using laser light. It has been proposed to implant (229)thorium into VUV transparent crystal matrices to facilitate laser spectroscopy and possibly realize a solid-state nuclear clock. In this work, we validate the feasibility of this approach by computer modelling of thorium doping into calcium fluoride single crystals. Using atomistic modelling and full electronic structure calculations, we find a persistent large band gap and no additional electronic levels emerging in the middle of the gap due to the presence of the dopant, which should allow direct optical interrogation of the nuclear transition.Based on the electronic structure, we estimate the thorium nuclear quantum levels within the solid-state environment. Precision laser spectroscopy of these levels will allow the study of a broad range of crystal field effects, transferring Mössbauer spectroscopy into the optical regime.

Covalent magnetism and magnetic impurities

We use the model of covalent magnetism and its application to magnetic insulators applied to the case of insulating carbon doped BaTiO3. Since the usual Stoner mechanism is not applicable we study the possibility of the formation of magnetic order based on a mechanism favoring singly occupied orbitals. On the basis of our model parameters we formulate a criterion similar to the Stoner criterion but also valid for insulators. We describe the model of covalent magnetism using a molecular orbital picture and determine the occupation numbers for spin-up and spin-down states. Our model allows a simulation of the results of our ab initio calculations for E(ℳ) which are found to be in very good agreement.

Orthorhombic ABC semiconductors as antiferroelectrics

We use a first-principles rational-design approach to identify a previously unrecognized class of antiferroelectric materials in the Pnma MgSrSi structure type. The MgSrSi structure type can be described in terms of antipolar distortions of the nonpolar P6(3)/mmc ZrBeSi structure type, and we find many members of this structure type are close in energy to the related polar P6(3)mc LiGaGe structure type, which includes many members we predict to be ferroelectric. We highlight known ABC combinations in which this energy difference is comparable to the antiferroelectric-ferroelectric switching barrier of PbZrO(3). We calculate structural parameters and relative energies for all three structure types, both for reported and as-yet hypothetical representatives of this class. Our results provide guidance for the experimental realization and further investigation of high-performance materials suitable for practical applications.

Rh2O3 versus IrO2: relativistic effects and the stability of Ir4+

Despite the wide-ranging applications of binary Rh and Ir oxides, their stability and trends in Rh and Ir oxidation states are not fully understood. Using first-principles electronic structure calculations, we demonstrate that the origin of the categorical stability of Ir(4+) is the relativistic contraction of the 6s orbital and, consequently, an expansion of 5d orbitals. Relativistic effects significantly stabilize Ir(4+)-containing metallic rutile IrO(2) over a wide range of O chemical potentials, despite the choice that Ir has of forming semiconducting corundum Ir(2)O(3). In contrast, Rh is found to display a wider stability range for corundum Rh(2)O(3) with Rh(3+) and a greater propensity for multiple oxidation states.

Probing bulk electronic structure with hard X-ray angle-resolved photoemission

Traditional ultraviolet/soft X-ray angle-resolved photoemission spectroscopy (ARPES) may in some cases be too strongly influenced by surface effects to be a useful probe of bulk electronic structure. Going to hard X-ray photon energies and thus larger electron inelastic mean-free paths should provide a more accurate picture of bulk electronic structure. We present experimental data for hard X-ray ARPES (HARPES) at energies of 3.2 and 6.0 keV. The systems discussed are W, as a model transition-metal system to illustrate basic principles, and GaAs, as a technologically-relevant material to illustrate the potential broad applicability of this new technique. We have investigated the effects of photon wave vector on wave vector conservation, and assessed methods for the removal of phonon-associated smearing of features and photoelectron diffraction effects. The experimental results are compared to free-electron final-state model calculations and to more precise one-step photoemission theory including matrix element effects.

High pressure study of the zinc phosphide semiconductor compound in two different phases

Electronic and structural properties of the zinc phosphide semiconductor compound are calculated at hydrostatic pressure using the full-potential all-electron linearized augmented plane wave plus local orbital (FP-LAPW+lo) method in both cubic and tetragonal phases. The exchange-correlation potential is treated by the generalized gradient approximation within the scheme of Perdew, Burke and Ernzerhof, GGA96 (1996 Phys. Rev. Lett. 77 3865). Also, the Engel and Vosko GGA formalism, EV-GGA (Engel and Vosko 1993 Phys. Rev. B 47 13164), is used to improve the band-gap results. Internal parameters are optimized by relaxing the atomic positions in the force directions using the Hellman-Feynman approach. The lattice constants, internal parameters, bulk modulus, cohesive energy and band structures have been calculated and compared to the available experimental and theoretical results. The structural calculations predict that the stable phase is tetragonal. The effects of hydrostatic pressure on the behavior of band parameters such as band-gap, valence bandwidths and internal gaps (the energy gap between different parts of the valence bands) are studied using both GGA96 and EV-GGA.

First principle calculations of structural, electronic, thermodynamic and optical properties of Pb(1-x)Ca(x)S,Pb(1-x)Ca(x)Se and Pb(1-x)Ca(x)Te ternary alloys

Using first principles total energy calculations within the full potential linearized augmented plane wave (FP-LAPW) method, we have investigated the structural, electronic, thermodynamic and optical properties of Pb(1-x)Ca(x)S, Pb(1-x)Ca(x)Se and Pb(1-x)Ca(x)Te ternary alloys. The effect of composition on lattice parameter, bulk modulus, band gap, refractive index and dielectric function was investigated. Deviations of the lattice constants from Vegard's law and the bulk modulus from linear concentration dependence were observed for the three alloys. Using the approach of Zunger and co-workers, the microscopic origins of band gap bowing have been detailed and explained. The disorder parameter (gap bowing) was found to be mainly caused by the chemical charge transfer effect. On the other hand, the thermodynamic stability of these alloys was investigated by calculating the excess enthalpy of mixing, ΔH(m), as well as the phase diagram. It was shown that all of these alloys are stable at low temperature. The calculated refractive indices and optical dielectric constants were found to vary nonlinearly with Ca composition.

Prediction that uniaxial tension along <111> produces a direct band gap in germanium

We predict a new way to achieve a direct band gap in germanium, and hence optical emission in this technologically important group-IV element: tensile strain along the <111> direction in Ge nanowires. Although a symmetry-breaking band splitting lowers the conduction band at the corner of the Brillouin zone (at the L point), a direct gap of 0.34 eV in the center of the Brillouin zone (at Gamma) can still be achieved at 4.2% longitudinal strain, through an unexpectedly strong nonlinear drop in the conduction band edge at Gamma for strain along this axis. These strains are well within the experimentally demonstrated mechanical limits of single-crystal Ge (or Ge(x)Si(1-x)) nanowires, thereby opening a new material system for fundamental optical studies and applications.

Advances in correlated electronic structure methods for solids, surfaces, and nanostructures

Calculations of the electronic structure of solids began decades ago, but only recently have solid-state quantum techniques become sufficiently reliable that their application is nearly as routine as quantum chemistry is for molecules. We aim to introduce chemists to the pros and cons of first-principles methods that can provide atomic-scale insight into the properties and chemistry of bulk materials, interfaces, and nanostructures. The techniques we review include the ubiquitous density functional theory (DFT), which is often sufficient, especially for metals; extensions such as DFT + U and hybrid DFT, which incorporate exact exchange to rid DFT of its spurious self-interactions (critical for some semiconductors and strongly correlated materials); many-body Green's function (GW and Bethe-Salpeter) methods for excited states; quantum Monte Carlo, in principle an exact theory but for which forces (hence structure optimization and dynamics) are problematic; and embedding theories that locally refine the quantum treatment to improve accuracy.

Elemental mapping using the Ga 3d and In 4d transitions in the ε2 absorption spectra derived from EELS

It is proposed that by using the valence-band states in electron energy loss spectroscopy, high-spatial resolution maps of quantitative elemental composition may be acquired with high acquisition rates. Further, it is shown that by using the epsilon(2) spectrum instead of single scattering data, the noise in the observed transitions and associated maps is significantly reduced. The epsilon(2) spectra are derived through a Kramers-Kronig transformation from electron energy loss spectra obtained in a scanning transmission electron microscope. Using transitions that occur in the epsilon(2) absorption spectrum (<40eV), quantitative elemental maps for III-V device structures have been produced. An example is provided using the Ga 3d transition to map a GaInNAs/GaAs laser structure. Weaker transitions such as In 4d have also been used to verify the Ga elemental distribution.