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Min J, Zhai J, Dong T, Xu D, Yan Y, Garoufalis CS, Baskoutas S, Zeng Z, Jia Y. Design Principle for Tetrahedral Semiconductors and Their Functional Derivatives: Cation Stabilizing Charged Cluster Network. NANO LETTERS 2023; 23:4648-4653. [PMID: 37167231 DOI: 10.1021/acs.nanolett.3c01352] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Colloidal quantum dots (QDs) of groups II-VI and III-V are key ingredients for next-generation light-emitting devices. Yet, many of them are heavy-element-containing or indirect bandgap, causing limited choice of environmental friendly efficient light-emitting materials. Herein, we resolve this issue by exploring potential derivatives of the parent semiconductors, thus expanding the material space. The key to success is the discovery of a principle for designing those materials, namely, cation stabilizing charged cluster network. Guided by this principle, three novel categories of cubic materials have been predicted, namely, porous binary compounds, I-II-VI ternary compounds, and I-II-III-V quaternary compounds. Using first-principles calculations, 65 realistic highly stable candidate materials have been theoretically screened. Their structural and compositional diversity enables a wide tunability of emitting wavelength from far-infrared to ultraviolet region. This work enriches the family of tetrahedral semiconductors and derivatives, which may be of interest for a broad field of optoelectronic applications.
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Affiliation(s)
- Jingjing Min
- Key Laboratory for Special Functional Materials of Ministry of Education, Collaborative Innovation Center of Nano Functional Materials and Applications, and School of Materials Science and Engineering, Henan University, Kaifeng, Henan 475001, China
| | - Jingwen Zhai
- Key Laboratory for Special Functional Materials of Ministry of Education, Collaborative Innovation Center of Nano Functional Materials and Applications, and School of Materials Science and Engineering, Henan University, Kaifeng, Henan 475001, China
| | - Tieshuan Dong
- Institute for Computational Materials Science, School of Physics and Electronics, International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng, Henan 475001, China
| | - Dangdang Xu
- Key Laboratory for Special Functional Materials of Ministry of Education, Collaborative Innovation Center of Nano Functional Materials and Applications, and School of Materials Science and Engineering, Henan University, Kaifeng, Henan 475001, China
| | - Yuli Yan
- Institute for Computational Materials Science, School of Physics and Electronics, International Joint Research Laboratory of New Energy Materials and Devices of Henan Province, Henan University, Kaifeng, Henan 475001, China
| | | | - Sotirios Baskoutas
- Materials Science Department, University of Patras, 26504 Patras, Greece
| | - Zaiping Zeng
- Key Laboratory for Special Functional Materials of Ministry of Education, Collaborative Innovation Center of Nano Functional Materials and Applications, and School of Materials Science and Engineering, Henan University, Kaifeng, Henan 475001, China
| | - Yu Jia
- Key Laboratory for Special Functional Materials of Ministry of Education, Collaborative Innovation Center of Nano Functional Materials and Applications, and School of Materials Science and Engineering, Henan University, Kaifeng, Henan 475001, China
- International Laboratory for Quantum Functional Materials of Henan, and School of Physics and Engineering, Zhengzhou University, Zhengzhou, Henan 450001, China
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Aubert T, Golovatenko AA, Samoli M, Lermusiaux L, Zinn T, Abécassis B, Rodina AV, Hens Z. General Expression for the Size-Dependent Optical Properties of Quantum Dots. NANO LETTERS 2022; 22:1778-1785. [PMID: 35156830 DOI: 10.1021/acs.nanolett.2c00056] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
While initial theories on quantum confinement in colloidal quantum dots (QDs) led to analytical band gap/size relations or sizing functions, numerical methods describe size quantization more accurately. However, because of the lack of reliable sizing functions, researchers fit experimental band gap/size data sets using models with redundant, physically meaningless parameters that break down upon extrapolation. Here, we propose a new sizing function based on a proportional correction for nonparabolic bands. Using known bulk parameters, we predict size quantization for groups IV, III-V, II-VI, and IV-VI and metal-halide perovskite semiconductors, including straightforward adaptations for negative-gap semiconductors and nonspherical QDs. Refinement with respect to experimental data is possible using the Bohr diameter as a fitting parameter, by which we show a statistically relevant difference in the band gap/size relation for wurtzite and zinc blende CdSe. The general sizing function proposed here unifies the QD size calibration and enables researchers to assess bulk semiconductor parameters and predict the size quantization in unexplored materials.
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Affiliation(s)
- Tangi Aubert
- Physics and Chemistry of Nanostructures, Ghent University, 9000 Ghent, Belgium
- ICGM, Université de Montpellier, CNRS, ENSCM, 34000 Montpellier, France
| | | | - Margarita Samoli
- Physics and Chemistry of Nanostructures, Ghent University, 9000 Ghent, Belgium
| | - Laurent Lermusiaux
- Université de Lyon, ENS de Lyon, CNRS, Laboratoire de Chimie, 69342 Lyon, France
| | - Thomas Zinn
- ESRF - The European Synchrotron, 38043 Grenoble, France
| | - Benjamin Abécassis
- Université de Lyon, ENS de Lyon, CNRS, Laboratoire de Chimie, 69342 Lyon, France
| | - Anna V Rodina
- Ioffe Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
| | - Zeger Hens
- Physics and Chemistry of Nanostructures, Ghent University, 9000 Ghent, Belgium
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Wang Y, Jackson HE, Smith LM, Burgess T, Paiman S, Gao Q, Tan HH, Jagadish C. Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires. NANO LETTERS 2014; 14:7153-7160. [PMID: 25382815 DOI: 10.1021/nl503747h] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires, which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs InP NW) and less strongly on crystal structure (ZB vs WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NWs reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures that lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices.
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Affiliation(s)
- Yuda Wang
- Department of Physics, University of Cincinnati , Cincinnati, Ohio 45221-0011, United States
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Montazeri M, Wade A, Fickenscher M, Jackson HE, Smith LM, Yarrison-Rice JM, Gao Q, Tan HH, Jagadish C. Photomodulated rayleigh scattering of single semiconductor nanowires: probing electronic band structure. NANO LETTERS 2011; 11:4329-4336. [PMID: 21894948 DOI: 10.1021/nl202433g] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
The internal electronic structures of single semiconductor nanowires can be resolved using photomodulated Rayleigh scattering spectroscopy. The Rayleigh scattering from semiconductor nanowires is strongly polarization sensitive which allows a nearly background-free method for detecting only the light that is scattered from a single nanowire. While the Rayleigh scattering efficiency from a semiconductor nanowire depends on the dielectric contrast, it is relatively featureless as a function of energy. However, if the nanowire is photomodulated using a second pump laser beam, the internal electronic structure can be resolved with extremely high signal-to-noise and spectral resolution. The photomodulated Rayleigh scattering spectra can be understood theoretically as a first derivative of the scattering efficiency that results from a modulation of the band gap and depends sensitively on the nanowire diameter. Fits to spectral lineshapes provide both the band structure and the diameter of individual GaAs and InP nanowires under investigation.
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Affiliation(s)
- Mohammad Montazeri
- Department of Physics, University of Cincinnati , Cincinnati, Ohio 45221-0011, United States
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Chen Y, Gil B, Mathieu H. Exciton et polariton dans les semiconducteurs cubiques : étude de la réflectivité. ACTA ACUST UNITED AC 2004. [DOI: 10.1051/anphys:01987001203010900] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
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Electronic structure of indium phosphide clusters: anion photoelectron spectroscopy of InxPx− and Inx+1Px− (x=1–13) clusters. Chem Phys Lett 1999. [DOI: 10.1016/s0009-2614(99)00671-5] [Citation(s) in RCA: 51] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
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Seitsonen AP, Virkkunen R, Puska MJ, Nieminen RM. Indium and phosphorus vacancies and antisites in InP. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:5253-5262. [PMID: 10011476 DOI: 10.1103/physrevb.49.5253] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Viri D, D'Andrea A. Exciton-free-layer depth as a function of the electron-hole mass ratio. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:9110-9113. [PMID: 10007133 DOI: 10.1103/physrevb.48.9110] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Allegre J, Calatayud J, Gil B, Mathieu H, Tuffigo H, Lentz G, Magnea N, Mariette H. Identification of valence subbands in CdTe-Cd1-xZnxTe strained-layer quantum wells by differential spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:8195-8202. [PMID: 9993142 DOI: 10.1103/physrevb.41.8195] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Camassel J, Laurenti JP, Bouhemadou A, Legros R, Lusson A, Toulouse B. Composition dependence of the Gamma 8- Gamma 6 transition in mercury cadmium telluride: A reexamination. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:3948-3959. [PMID: 9946769 DOI: 10.1103/physrevb.38.3948] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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D’Andrea A, Del Sole R. Optical properties of excitons in semi-infinite semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:1197-1209. [PMID: 9946376 DOI: 10.1103/physrevb.38.1197] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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12
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Mathieu H, Lefebvre P, Allegre J, Gil B, Regreny A. Differential spectroscopy of GaAs-Ga1-xA. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 36:6581-6584. [PMID: 9942370 DOI: 10.1103/physrevb.36.6581] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Chen Y, Gil B, Mathieu H, Lascaray JP. Exciton-polaritons in InP: Magnetoreflectance investigation. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 36:1510-1518. [PMID: 9942982 DOI: 10.1103/physrevb.36.1510] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Gil B, Chen Y, Mathieu H. Localization behavior of donor-related complexes in InP under hydrostatic pressure. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 36:1090-1093. [PMID: 9942914 DOI: 10.1103/physrevb.36.1090] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Uzan C, Mariette H, Muranevich A. Optical characterization and thermal dissociation of bound excitons in CdSexTe1-x. PHYSICAL REVIEW. B, CONDENSED MATTER 1986; 34:8728-8732. [PMID: 9939593 DOI: 10.1103/physrevb.34.8728] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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