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Tedeschi D, De Luca M, Granados Del Águila A, Gao Q, Ambrosio G, Capizzi M, Tan HH, Christianen PCM, Jagadish C, Polimeni A. Value and Anisotropy of the Electron and Hole Mass in Pure Wurtzite InP Nanowires. NANO LETTERS 2016; 16:6213-6221. [PMID: 27676609 DOI: 10.1021/acs.nanolett.6b02469] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The effective mass of electrons and holes in semiconductors is pivotal in determining the dynamics of carriers and their confinement energy in nanostructured materials. Surprisingly, this quantity is still unknown in wurtzite (WZ) nanowires (NWs) made of III-V compounds (e.g., GaAs, InAs, GaP, InP), where the WZ phase has no bulk counterpart. Here, we investigate the magneto-optical properties of InP WZ NWs grown by selective-area epitaxy that provides perfectly ordered NWs featuring high-crystalline quality. The combined analysis of the energy of free exciton states and impurity levels under magnetic field (B up to 29 T) allows us to disentangle the dynamics of oppositely charged carriers from the Coulomb interaction and thus to determine the values of the electron and hole effective mass. By application of B⃗ along different crystallographic directions, we also assess the dependence of the transport properties with respect to the NW growth axis (namely, the WZ ĉ axis). The effective mass of electrons along ĉ is me∥ = (0.078 ± 0.002) m0 (m0 is the electron mass in vacuum) and perpendicular to ĉ is me⊥ = (0.093 ± 0.001) m0, resulting in a 20% mass anisotropy. Holes exhibit a much larger (∼320%) and opposite mass anisotropy with their effective mass along and perpendicular to ĉ equal to mh∥ = (0.81 ± 0.18) m0 and mh⊥ = (0.250 ± 0.016) m0, respectively. While no full consensus is found with current theoretical results on WZ InP, our findings show trends remarkably similar to the experimental data available in WZ bulk materials, such as InN, GaN, and ZnO.
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Affiliation(s)
- D Tedeschi
- Dipartimento di Fisica, Sapienza Università di Roma , Piazzale A. Moro 2, 00185 Roma, Italy
| | - M De Luca
- Dipartimento di Fisica, Sapienza Università di Roma , Piazzale A. Moro 2, 00185 Roma, Italy
| | - A Granados Del Águila
- High Field Magnet Laboratory (HFML - EMFL), Radboud University , Toernooiveld 7, NL-6525 ED Nijmegen, The Netherlands
| | - Q Gao
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia
| | - G Ambrosio
- Dipartimento di Fisica, Sapienza Università di Roma , Piazzale A. Moro 2, 00185 Roma, Italy
| | - M Capizzi
- Dipartimento di Fisica, Sapienza Università di Roma , Piazzale A. Moro 2, 00185 Roma, Italy
| | - H H Tan
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia
| | - P C M Christianen
- High Field Magnet Laboratory (HFML - EMFL), Radboud University , Toernooiveld 7, NL-6525 ED Nijmegen, The Netherlands
| | - C Jagadish
- Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, ACT 2601, Australia
| | - A Polimeni
- Dipartimento di Fisica, Sapienza Università di Roma , Piazzale A. Moro 2, 00185 Roma, Italy
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Baranowski JM, Liliental-Weber Z, Korona K, Pakuła K, Stępniewski R, Wysmołek A, Grzegory I, Nowak G, Porowski S, Monemar B, Bergman P. Structural and Optical Properties of Homoepitaxial GaN Layers. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-449-393] [Citation(s) in RCA: 26] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTThe review of structural and optical properties of homoepitaxial layers grown by MOVCD on single crystals GaN substrates is presented. The TEM technique is used to characterise the structural properties of epi-layers. It is found that the structural properties of GaN homoepitaxial layers are determined by the polarity of the substrate surface on which the growth takes place. It is shown that threading dislocations are present only in the layers grown on the [0001] “smooth” surface. On the other hand the layers grown on the [0001] “rough” surface are free from vertical defects. The characteristic feature of the growth on the “rough” surface are pinholes. The optical properties of homoepitaxial layers are predominantly determined by the growth polarity as well. It is shown also that the reflectivity measurement is the most precise way to determine the exciton energies and that emissions due to free excitons are strongly affected by polariton effects.
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Shubina TV, Glazov MM, Toropov AA, Gippius NA, Vasson A, Leymarie J, Kavokin A, Usui A, Bergman JP, Pozina G, Monemar B. Resonant light delay in GaN with ballistic and diffusive propagation. PHYSICAL REVIEW LETTERS 2008; 100:087402. [PMID: 18352663 DOI: 10.1103/physrevlett.100.087402] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/07/2007] [Revised: 11/19/2007] [Indexed: 05/26/2023]
Abstract
We report on a strong delay in light propagation through bulk GaN, detected by time-of-flight spectroscopy. The delay increases resonantly as the photon energy approaches the energy of a neutral-donor bound exciton (BX), resulting in a velocity of light as low as 2100 km/s. In the close vicinity of the BX resonance, the transmitted light contains both ballistic and diffusive components. This phenomenon is quantitatively explained in terms of optical dispersion in a medium where resonant light scattering by the BX resonance takes place in addition to the polariton propagation.
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Affiliation(s)
- T V Shubina
- Ioffe Physico-Technical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
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Myhajlenko S, Davito DB, Puechner RA, Edwards JL. The bewildering surface attributes of gallium arsenide A cathodoluminescence perspective. ACTA ACUST UNITED AC 2006. [DOI: 10.1080/01418639408240129] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
Affiliation(s)
- S. Myhajlenko
- a Center for Solid State Electronics Research, College of Engineering and Applied Sciences, Arizona State University , Tempe , AZ , 85287-6206 , USA
| | - D. B. Davito
- b Epitronics Corporation , 21002 N. 19th Avenue, Phoenix , AZ , 85027 , USA
| | - R. A. Puechner
- a Center for Solid State Electronics Research, College of Engineering and Applied Sciences, Arizona State University , Tempe , AZ , 85287-6206 , USA
| | - J. L. Edwards
- a Center for Solid State Electronics Research, College of Engineering and Applied Sciences, Arizona State University , Tempe , AZ , 85287-6206 , USA
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Benzaquen R, Leonelli R, Charbonneau S, Poole PJ, Roth AP. Temperature dependence of the free-exciton-emission linewidth in high-purity InP. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:R2273-R2276. [PMID: 9981389 DOI: 10.1103/physrevb.52.r2273] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Luminescence kinetics of intrinsic excitonic states quantum-mechanically bound near high-quality (n--type GaAs)/(p-type AlxGa1-xAs) heterointerfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:8113-8125. [PMID: 10009576 DOI: 10.1103/physrevb.49.8113] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Wan JZ, Brebner JL, Leonelli R, Zhao G, Graham JT. Temperature dependence of free-exciton photoluminescence in crystalline GaTe. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:5197-5201. [PMID: 10009034 DOI: 10.1103/physrevb.48.5197] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Capizzi M, Emiliani V, Frova A, Sarto F, Sacks RN. Hydrogen-donor-induced free-exciton splitting in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:12563-12567. [PMID: 10005450 DOI: 10.1103/physrevb.47.12563] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Park TR, Solin SA, Dye JL. Exciton-polariton luminescence from sodium cryptand sodide. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:817-830. [PMID: 10003265 DOI: 10.1103/physrevb.46.817] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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Aaviksoo J, Reimand I, Rossin VV, Travnikov VV. Kinetics of free-exciton luminescence in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:1473-1476. [PMID: 10001635 DOI: 10.1103/physrevb.45.1473] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Lavigne B, Cox RT. Polariton-impurity interactions and photoconductivity in CdTe studied by cyclotron-resonance-excitation spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:12374-12387. [PMID: 9997034 DOI: 10.1103/physrevb.43.12374] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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12
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Cooper DE, Newman PR. Exciton-polariton dynamics and photoluminescence line shapes in cadmium telluride. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:7431-7440. [PMID: 9947421 DOI: 10.1103/physrevb.39.7431] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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