Theoretical calculations of heterojunction discontinuities in the Si/Ge system

Atomic Valence Reversal-Induced Polarization Resonance Spurs Highly Efficient Electromagnetic Wave Absorption in α-Fe2O3@Carbon Microtubes

Variegation and complexity of polarization relaxation loss in many heterostructured materials provide available mechanisms to seek a strong electromagnetic wave (EMW) absorption performance. Here we construct a unique heterostructured compound that bonds α-Fe2O3 nanosheets of the (110) plane on carbon microtubes (CMTs). Through effective alignment between the Fermi energy level of CMTs and the conduction band position of α-Fe2O3 nanosheets at the interface, we attain substantial polarization relaxation loss via novel atomic valence reversal between Fe(III) ↔ Fe(III-) induced with periodic electron injection from conductive CMTs under EMW irradiation to give α-Fe2O3 nanosheets. Such heterostructured materials possess currently reported minimum reflection loss of -84.01 dB centered at 10.99 GHz at a thickness of 3.19 mm and an effective absorption bandwidth (reflection loss ≤ -10 dB) of 7.17 GHz (10.83-18 GHz) at 2.65 mm. This work provides an effective strategy for designing strong EMW absorbers by combining highly efficient electron injection and atomic valence reversal.

Electronic Transport and Quantum Phenomena in Nanowires

Nanowires are natural one-dimensional channels and offer new opportunities for advanced electronic quantum transport experiments. We review recent progress on the synthesis of nanowires and methods for the fabrication of hybrid semiconductor/superconductor systems. We discuss methods to characterize their electronic properties in the context of possible future applications such as topological and spin qubits. We focus on group III-V (InAs and InSb) and group IV (Ge/Si) semiconductors, since these are the most developed, and give an outlook on other potential materials.

Hexagonal-Ge Nanostructures with Direct-Bandgap Emissions in a Si-Based Light-Emitting Metasurface

Si-based emitters have been of great interest as an ideal light source for monolithic optical-electronic integrated circuits (MOEICs) on Si substrates. However, the general Si-based material is a diamond structure of cubic lattice with an indirect band gap, which cannot emit light efficiently. Here, hexagonal-Ge (H-Ge) nanostructures within a light-emitting metasurface consisting of a cubic-SiGe nanodisk array are reported. The H-Ge nanostructure is naturally formed within the cubic-Ge epitaxially grown on Si (001) substrates due to the strain-induced nanoscale crystal structure transformation assisted by far-from-equilibrium growth conditions. The direct-bandgap features of H-Ge nanostructures are observed and discussed, including a rather strong and linearly power-dependent photoluminescence (PL) peak around 1562 nm at room temperature and temperature-insensitive PL spectrum near room temperature. Given the direct-bandgap nature, the heterostructure of H-Ge/C-Ge, and the compatibility with the sophisticated Si technology, the H-Ge nanostructure has great potential for innovative light sources and other functional devices, particularly in Si-based MOEICs.

Influence of Different Carrier Gases, Temperature, and Partial Pressure on Growth Dynamics of Ge and Si Nanowires

The broad and fascinating properties of nanowires and their synthesis have attracted great attention as building blocks for functional devices at the nanoscale. Silicon and germanium are highly interesting materials due to their compatibility with standard CMOS technology. Their combination provides optimal templates for quantum applications, for which nanowires need to be of high quality, with carefully designed dimensions, crystal phase, and orientation. In this work, we present a detailed study on the growth kinetics of silicon (length 0.1-1 μm, diameter 10-60 nm) and germanium (length 0.06-1 μm, diameter 10-500 nm) nanowires grown by chemical vapor deposition applying the vapour-liquid-solid growth method catalysed by gold. The effects of temperature, partial pressure of the precursor gas, and different carrier gases are analysed via scanning electron microscopy. Argon as carrier gas enhances the growth rate at higher temperatures (120 nm/min for Ar and 48 nm/min H2), while hydrogen enhances it at lower temperatures (35 nm/min for H2 and 22 nm/min for Ar) due to lower heat capacity. Both materials exhibit two growth regimes as a function of the temperature. The tapering rate is about ten times lower for silicon nanowires than for germanium ones. Finally, we identify the optimal conditions for nucleation in the nanowire growth process.

Dangling Bonds as Possible Contributors to Charge Noise in Silicon and Silicon-Germanium Quantum Dot Qubits

Spin qubits based on Si and Si1-xGex quantum dot architectures exhibit among the best coherence times of competing quantum computing technologies, yet they still suffer from charge noise that limit their qubit gate fidelities. Identifying the origins of these charge fluctuations is therefore a critical step toward improving Si quantum-dot-based qubits. Here, we use hybrid functional calculations to investigate possible atomistic sources of charge noise, focusing on charge trapping at Si and Ge dangling bonds (DBs). We evaluate the role of global and local environment in the defect levels associated with DBs in Si, Ge, and Si1-xGex alloys, and consider their trapping and excitation energies within the framework of configuration coordinate diagrams. We additionally consider the influence of strain and oxidation in charge-trapping energetics by analyzing Si and GeSi DBs in SiO2 and strained Si layers in typical Si1-xGex quantum dot heterostructures. Our results identify that Ge dangling bonds are more problematic charge-trapping centers both in typical Si1-xGex alloys and associated oxidation layers, and they may be exacerbated by compositional inhomogeneities. These results suggest the importance of alloy homogeneity and possible passivation schemes for DBs in Si-based quantum dot qubits and are of general relevance to mitigating possible trap levels in other Si, Ge, and Si1-xGex-based metal-oxide-semiconductor stacks and related devices.

Electronic Characteristics, Stability and Water Oxidation Selectivity of High-Index BiVO4 Facets for Photocatalytic Application: A First Principle Study

Some high-index facets of BiVO₄, such as (012), (210), (115), (511), (121), (132) and (231), exhibit much better photocatalytic performance than conventional (010) and (110) surfaces for water splitting. However, the detailed mechanisms and stability of improved photocatalytic performance for these high-index BiVO₄ surfaces are still not clear, which is important for designing photocatalysts with high efficiency. Here, based on first principle calculation, we carried out a systematic theoretical research on BiVO₄ with different surfaces, especially high-index facets. The results show that all of the high-index facets in our calculated systems show an n-type behavior, and the band edge positions indicate that all of the high-index facets have enough ability to produce O₂ without external bias. Electronic structures, band alignments and formation enthalpy indicate that (012), (115) and (132) could be equivalent to (210), (511) and (231), respectively, in the calculation. Oxidation and reduction potential show that only (132)/(231) is stable without strongly oxidative conditions, and the Gibbs free energy indicates that (012)/(210), (115)/(511), (121) and (132)/(231) have lower overpotential than (010) and (110). Our calculation is able to unveil insights into the effects of the surface, including electronic structures, overpotential and stability during the reaction process.

Approximating constant potential DFT with canonical DFT and electrostatic corrections

The complexity of electrochemical interfaces has led to the development of several approximate density functional theory (DFT)-based schemes to study reaction thermodynamics and kinetics as a function of electrode potential. While fixed electrode potential conditions can be simulated with grand canonical ensemble DFT (GCE-DFT), various electrostatic corrections on canonical, constant charge DFT are often applied instead. In this work, we present a systematic derivation and analysis of the different electrostatic corrections on canonical DFT to understand their physical validity, implicit assumptions, and scope of applicability. Our work highlights the need to carefully address the suitability of a given model for the problem under study, especially if physical or chemical insight in addition to reaction energetics is sought. In particular, we analytically show that the different corrections cannot differentiate between electrostatic interactions and covalent or charge-transfer interactions. By numerically testing different models for CO₂ adsorption on a single-atom catalyst as a function of the electrode potential, we further show that computed capacitances, dipole moments, and the obtained physical insight depend sensitively on the chosen approximation. These features limit the scope, generality, and physical insight of these corrective schemes despite their proven practicality for specific systems and energetics. Finally, we suggest guidelines for choosing different electrostatic corrections and propose the use of conceptual DFT to develop more general approximations for electrochemical interfaces and reactions using canonical DFT.

Computational and experimental studies on band alignment of ZnO/InxGa2-xO3/GaN heterojunctions

The ZnO/GaN heterojunctions are extensively investigated now, owing to their good luminescent properties and devisable capability to form efficient hybrid structures. An electron-blocking layer inserted into heterojunctions can greatly change their properties. In this work, n-ZnO/β-In_xGa_2-xO₃/p-GaN heterojunctions have been successfully formed using atomic layer deposition methods. We show that the doping of In can effectively tune the band edges of the heterojunctions. First-principle calculations reveal that the bandgap of bulk β-In_xGa_2-xO₃ shrinks linearly with the increase in In contents, accompanied by an upward movement of the valence band maximum and a downward movement of the conduction band minimum. As the indium concentrations increase, the valence band offsets show an upward movement at both the In_xGa_2-xO₃/GaN and ZnO/In_xGa_2-xO₃ interfaces, while the conduction band offsets present different trends. A broad, reddish yellow-green emission appears after In doping, which verifies the effect of band alignment. What is more, we show that the amorphization of In_xGa_2-xO₃ can play an important role in tuning the band edge. This work provides access to a series of band offsets tunable heterojunctions and can be used for the further design of direct white light-emitting diodes without any phosphors, based on this structure.

Composition Dependent Electrical Transport in Si1-x Gex Nanosheets with Monolithic Single-Elementary Al Contacts

Si_1-x Ge_x is a key material in modern complementary metal-oxide-semiconductor and bipolar devices. However, despite considerable efforts in metal-silicide and -germanide compound material systems, reliability concerns have so far hindered the implementation of metal-Si_1-x Ge_x junctions that are vital for diverse emerging "More than Moore" and quantum computing paradigms. In this respect, the systematic structural and electronic properties of Al-Si_1-x Ge_x heterostructures, obtained from a thermally induced exchange between ultra-thin Si_1-x Ge_x nanosheets and Al layers are reported. Remarkably, no intermetallic phases are found after the exchange process. Instead, abrupt, flat, and void-free junctions of high structural quality can be obtained. Interestingly, ultra-thin interfacial Si layers are formed between the metal and Si_1-x Ge_x segments, explaining the morphologic stability. Integrated into omega-gated Schottky barrier transistors with the channel length being defined by the selective transformation of Si_1-x Ge_x into single-elementary Al leads, a detailed analysis of the transport is conducted. In this respect, a report on a highly versatile platform with Si_1-x Ge_x composition-dependent properties ranging from highly transparent contacts to distinct Schottky barriers is provided. Most notably, the presented abrupt, robust, and reliable metal-Si_1-x Ge_x junctions can open up new device implementations for different types of emerging nanoelectronic, optoelectronic, and quantum devices.

Vacancy defect engineered BiVO4 with low-index surfaces for photocatalytic application: a first principles study

BiVO₄ has been widely investigated as a photocatalyst material for water splitting due to its outstanding photocatalytic properties. In order to further improve its photocatalytic efficiency, it is necessary to conduct an in-depth study of improvement strategies, such as defect engineering. By focusing on the (001) and (011) surfaces, we carried out a systematic theoretical research on pristine and defective systems, including Bi, V and O vacancies. Based on density functional theory (DFT), the electronic properties, band alignments and Gibbs free energy of pristine and defective BiVO₄ have been analyzed. The electronic structures of the (001) and (011) surfaces show different band gaps, and O vacancies make the BiVO₄ become an n-type semiconductor, while Bi and V vacancies tend to form a p-type semiconductor. Moreover, the band edge positions indicate that holes are indeed easily accumulated on the (011) surface while electrons tend to accumulate on (001). However, the (011) surface with Bi and V vacancies does not have enough oxidation potential to oxidize water. The reaction free energy shows that O and Bi vacancies could lower the overpotential to some extent.

Photoelectron spectra of water and simple aqueous solutions at extreme conditions

Determining the electronic structure of aqueous solutions at extreme conditions is an important step towards understanding chemical bonding and reactions in water under pressure (P) and at high temperature (T)....

On-chip optical interconnection using integrated germanium light emitters and photodetectors

Germanium (Ge) is an attractive material for monolithic light sources and photodetectors, but it is not easy to integrate Ge light sources and photodetectors because their optimum device structures differ. In this study, we developed a monolithically integrated Ge light emitting diode (LED) that enables current injection at high density and a Ge photodiode (PD) having low dark current, and we fabricated an on-chip optical interconnection system consisting of the Ge LED, Ge PD, and Si waveguide. We investigated the properties of the fabricated Ge LED and PD and demonstrated on-chip optical interconnection.

Artificial Graphene on Si Substrates: Fabrication and Transport Characteristics

Artificial graphene (AG) based on a honeycomb lattice of semiconductor quantum dots (QDs) has been of great interest for exploration and applications of massless Dirac Fermions in semiconductors thanks to the tunable interplay between the carrier interactions and the honeycomb topology. Here, an innovative strategy to realize AG on Si substrates is developed by fabricating a honeycomb lattice of Au nanodisks on a Si/GeSi quantum well. The lateral potential modulation induced by the nanoscale Au/Si Schottky junction results in the formation of quantum dots arranged in a honeycomb lattice to form AG. Nonlinear current-voltage curves of the AG reveal conductance phase transitions with switch on/off voltages, a large electric hysteresis loop, and a strong sharp current peak accompanied by a group of differential-conductance peaks and negative differential conductance around the switch-on voltage, which can be modulated by temperature and light. These features are interpreted by a model based on the Coulomb blockade effect, the collective resonant tunneling, and the coupling of holes in the AG. Our results not only demonstrate an approach to the formation but also will greatly stimulate the characterizations and the applications of innovative semiconductor-based AG.

The origins of charge separation in anisotropic facet photocatalysts investigated through first-principles calculations

It was recently discovered that the oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) can be completed on the {110} and {001} facets, respectively, of a 18-facet SrTiO₃ mono-crystal. The effective charge separation is attributed to the facet junction at the interface between two arbitrary anisotropic crystal planes. Theoretical estimation of the built-in potential at the facet junction can greatly improve understanding of the mechanism. This work employs density functional theory (DFT) calculations to investigate such potential at the (110)/(100) facet junction in SrTiO₃ crystals. The formation of the facet junction is verified by a calculated work function difference between the (110) and (100) planes, which form p-type and n-type segments of the junction, respectively. The built-in potential is estimated at about 2.9 V. As a result, with the ultra high built-in potential, electrons and holes can effectively transfer to different anisotropic planes to complete both photo-oxidative and photo-reductive reactions.

Surface chemistry effects on work function, ionization potential and electronic affinity of Si(100), Ge(100) surfaces and SiGe heterostructures

We combine density functional theory and many body perturbation theory to investigate the electronic properties of Si(100) and Ge(100) surfaces terminated with halogen atoms (-I, -Br, -Cl, -F) and other chemical functionalizations (-H, -OH, -CH3) addressing the absolute values of their work function, electronic affinity and ionization potential. Our results point out that electronic properties of functionalized surfaces strongly depend on the chemisorbed species and much less on the surface crystal orientation. The presence of halogens at the surface always leads to an increment of the work function, ionization potential and electronic affinity with respect to fully hydrogenated surfaces. On the contrary, the presence of polar -OH and -CH3 groups at the surface leads to a reduction of the aforementioned quantities with respect to the H-terminated system. Starting from the work functions calculated for the Si and Ge passivated surfaces, we apply a simple model to estimate the properties of functionalized SiGe surfaces. The possibility of modulating the work function by changing the chemisorbed species and composition is predicted. The effects induced by different terminations on the band energy line-up profile of SiGe surfaces are then analyzed. Interestingly, our calculations predict a type-II band offset for the H-terminated systems and a type-I band offset for the other cases.

A Silicon-Compatible Synaptic Transistor Capable of Multiple Synaptic Weights toward Energy-Efficient Neuromorphic Systems

In order to resolve the issue of tremendous energy consumption in conventional artificial intelligence, hardware-based neuromorphic system is being actively studied. Although various synaptic devices for the system have been proposed, they have shown limits in terms of endurance, reliability, energy efficiency, and Si processing compatibility. In this work, we design a synaptic transistor with short-term and long-term plasticity, high density, high reliability and energy efficiency, and Si processing compatibility. The synaptic characteristics of the device are closely examined and validated through technology computer-aided design (TCAD) device simulation. Consequently, full synaptic functions with high energy efficiency have been realized.

Lasing in strained germanium microbridges

Germanium has long been regarded as a promising laser material for silicon based opto-electronics. It is CMOS-compatible and has a favourable band structure, which can be tuned by strain or alloying with Sn to become direct, as it was found to be required for interband semiconductor lasers. Here, we report lasing in the mid-infrared region (from λ = 3.20 μm up to λ = 3.66 μm) in tensile strained Ge microbridges uniaxially loaded above 5.4% up to 5.9% upon optical pumping, with a differential quantum efficiency close to 100% with a lower bound of 50% and a maximal operating temperature of 100 K. We also demonstrate the effect of a non-equilibrium electron distribution in k-space which reveals the importance of directness for lasing. With these achievements the strained Ge approach is shown to compare well to GeSn, in particular in terms of efficiency.

Germanium (based) lasers are a promising route towards a fully CMOS-compatible light source, key to the further development of silicon photonics. Here, the authors realize lasing from strained germanium microbridges up to 100 K, finding a quantum efficiency close to 100%.

Strain engineering of transverse electric and transverse magnetic mode of material gain in GeSn/SiGeSn quantum wells

8-band k · p Hamiltonian together with envelope function approximation and planewave expansion method are applied to calculate the electronic band structure and material gain for Ge_1−wSn_w/Si_yGe_1−x−ySn_x/Ge_1−wSn_w quantum wells (QWs) grown on virtual Ge_1-zSn_z substrates integrated with Si platform. It is clearly shown how both the emission wavelength in this material system can be controlled by the content of virtual substrate and the polarization of emitted light can be controlled via the built-in strain. In order to systematically demonstrate these possibilities, the transverse electric (TE) and transverse magnetic (TM) modes of material gain, and hence the polarization degree, are calculated for Ge_1−wSn_w/Si_yGe_1−x−ySn_x/Ge_1−wSn_w (QWs) with the strain varying from tensile (ε = +1.5%) to compressive (ε = −0.9%). It has been predicted that the polarization can be changed from 100% TE to 80% TM. In addition, it has been shown that Si_yGe_1−x−ySn_x barriers, lattice matched to the virtual Ge_1-zSn_z substrate (condition: y = 3.66(x-z)), may ensure a respectable quantum confinement for electrons and holes in this system. With such material features Ge_1−wSn_w/Si_yGe_1−x−ySn_x/Ge_1−wSn_w QW structure unified with Ge_1-zSn_z/Si platform may be considered as a very prospective one for light polarization engineering.

Structural properties of silicon-germanium and germanium-silicon core-shell nanowires

Core-shell nanowires made of Si and Ge can be grown experimentally with excellent control for different sizes of both core and shell. We have studied the structural properties of Si/Ge and Ge/Si core-shell nanowires aligned along the [Formula: see text] direction, with diameters up to 10.2 nm and varying core to shell ratios, using linear scaling density functional theory. We show that Vegard's law, which is often used to predict the axial lattice constant, can lead to an error of up to 1%, underlining the need for a detailed ab initio atomistic treatment of the nanowire structure. We analyse the character of the intrinsic strain distribution and show that, regardless of the composition or bond direction, the Si core or shell always expands. In contrast, the strain patterns in the Ge shell or core are highly sensitive to the location, composition and bond direction. The highest strains are found at heterojunction interfaces and the surfaces of the nanowires. This detailed understanding of the atomistic structure and strain paves the way for studies of the electronic properties of core-shell nanowires and investigations of doping and structure defects.

Applicability of Kerker preconditioning scheme to the self-consistent density functional theory calculations of inhomogeneous systems

The Kerker preconditioner, based on the dielectric function of homogeneous electron gas, is designed to accelerate the self-consistent field (SCF) iteration in the density functional theory calculations. However, a question still remains regarding its applicability to the inhomogeneous systems. We develop a modified Kerker preconditioning scheme which captures the long-range screening behavior of inhomogeneous systems and thus improves the SCF convergence. The effectiveness and efficiency is shown by the tests on long-z slabs of metals, insulators, and metal-insulator contacts. For situations without a priori knowledge of the system, we design the a posteriori indicator to monitor if the preconditioner has suppressed charge sloshing during the iterations. Based on the a posteriori indicator, we demonstrate two schemes of the self-adaptive configuration for the SCF iteration.

Analysis of threshold current of uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers

We propose and design uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers with the stress along <100> direction. The micro-bridge structure is adapted for introducing uniaxial stress in Ge/SiGe quantum well. To enhance the fabrication tolerance, full-etched circular gratings with high reflectivity bandwidths of ~500 nm are deployed in laser cavities. We compare and analyze the density of state, the number of states between Γ- and L-points, the carrier injection efficiency, and the threshold current density for the uniaxially tensile stressed bulk Ge and Ge/SiGe quantum well lasers. Simulation results show that the threshold current density of the Ge/SiGe quantum well laser is much higher than that of the bulk Ge laser, even combined with high uniaxial tensile stress owing to the larger number of states between Γ- and L- points and extremely low carrier injection efficiency. Electrical transport simulation reveals that the reduced effective mass of the hole and the small conduction band offset cause the low carrier injection efficiency of the Ge/SiGe quantum well laser. Our theoretical results imply that unlike III-V material, uniaxially tensile stressed bulk Ge outperforms a Ge/SiGe quantum well with the same strain level and is a promising approach for Si-compatible light sources.

Phase transformations upon doping in WO3

High levels of doping in WO3 have been experimentally observed to lead to structural transformation towards higher symmetry phases. We explore the structural phase diagram with charge doping through first-principles methods based on hybrid density functional theory, as a function of doping the room-temperature monoclinic phase transitions to the orthorhombic, tetragonal, and finally cubic phase. Based on a decomposition of energies into electronic and strain contributions, we attribute the transformation to a gain in energy resulting from a lowering of the conduction band on an absolute energy scale.

Computational Predictions for Single Chain Chalcogenide-Based One-Dimensional Materials

Exfoliation of multilayered materials has led to an abundance of new two-dimensional (2D) materials and to their fabrication by other means. These materials have shown exceptional promise for many applications. In a similar fashion, we can envision starting with crystalline polymeric (multichain) materials and exfoliate single-chain, one-dimensional (1D) materials that may also prove useful. We use electronic structure methods to elucidate the properties of such 1D materials: individual chains of chalcogens, of silicon dichalcogenides and of sulfur nitrides. The results indicate reasonable exfoliation energies in the case of polymeric three-dimensional (3D) materials. Quantum confinement effects lead to large band gaps and large exciton binding energies. The effects of strain are quantified and heterojunction band offsets are determined. Possible applications would entail 1D materials on 3D or 2D substrates.

Promising features of low-temperature grown Ge nanostructures on Si(001) substrates

High-quality Ge nanostructures are obtained by molecular beam epitaxy of Ge on Si(001) substrates at 200 °C and ex situ annealing at 400 °C. Their structural properties are comprehensively characterized by atomic force microscopy, transmission electron microscopy and Raman spectroscopy. It is disclosed that they are almost defect free except for some defects at the Ge/Si interface and in the subsequent Si capping layer. The misfit strain in the nanostructure is substantially relaxed. Dramatically strong photoluminescence (PL) from the Ge nanostructures is observed. Detailed analyses on the power- and temperature-dependent PL spectra, together with a self-consistent calculation, indicate the confinement and the high quantum efficiency of excitons within the Ge nanostructures. Our results demonstrate that the Ge nanostructures obtained via the present feasible route may have great potential in optoelectronic devices for monolithic optical-electronic integration circuits.

Ferroelectric fatigue in layered perovskites from self-energy corrected density functional theory

We employed GGA-1/2 to investigate the band alignment between platinum and various layered perovskite Aurivillius ferroelectrics. A model is proposed for ferroelectric fatigue in bismuth titanate based on our calculation.

Atomic Insight into the Origin of Various Operation Voltages of Cation-Based Resistance Switches

Low operation voltage (V_SET), which means low power consumption and good stability, is one of the most important factors in designing the resistance switches with high performance. However, the atomic details for the various V_SET values of such devices are still lacking, which hinders their further improvement. In the present study, by taking Ag/Ta₂O₅/Pt (V_SET = 0.6 V) and Cu/Ta₂O₅/Pt (V_SET = 2.0 V) as the examples, we have examined the switching mechanisms of these two cation-based devices by using first principle simulation. Several possible reasons have been addressed to explain the much lower V_SET of Ag/Ta₂O₅/Pt than that of Cu/Ta₂O₅/Pt: (i) the faster diffusion of Ag ions in Ta₂O₅ compared to Cu ions; (ii) the more preferable nucleation process of Ag ions at Pt/Ta₂O₅ interface compared to Cu ions; (iii) the lower Schottky barrier height (SBH) of Ag/Ta₂O₅/Pt than that of Cu/Ta₂O₅/Pt. On the basis of these results, several key factors have been suggested to design the cation-based resistance switches (oxidizable-metal/Ta₂O₅/inert-metal) with low V_SET values: (i) the weak interaction strength between oxidizable metal ions and Ta₂O₅ surface; (ii) the low formation energy of oxidizable metal ions on inert electrode; (iii) the low SBH, which could be controlled by tuning the ambient water pressure during the device fabrication process.

Role of AlN Polarity in the Band Alignment of AlN(0001)/Diamond(100) Heterojunctions: A First-Principles Study

We present a comprehensive first-principles study of the band alignment at AlN(0001)/diamond(100) heterojunctions, considering two different polarities of the AlN and taking into account atomic relaxation at the interface. Our simulations show that the valence-band offset reduces dramatically from about 1.6 eV for one polarity to 0.6 eV for the other, changing the corresponding band alignment from staggered (type II) to straddling (type I). Our findings have important consequences for the design of many applications, most notably solid state UV-emitting devices.

Strain-modulated Ge superlattices

We present a numerical study of the electronic and optical properties of a model single-element superlattice made of a periodic sequence of relaxed and strained regions of a germanium crystal, realized by means of an externally applied strain. We adopt the tight-binding model to evaluate the strain-driven modifications of the band structure and the optical properties. Superlattice band gaps, spatial confinement of near-gap valence and conduction states, and analysis of their symmetry character, have been obtained for different superlattice periodicities and strain intensities. Our results indicate that, for suitable choices of spatial periodicity and strain values, type-I and direct-gap superlattices, with strong dipole matrix elements, can be realized. Conceptually, we demonstrate that Ge single-element strained superlattices could be active materials for novel Si-compatible optical devices.

Amorphous Ge quantum dots embedded in crystalline Si: ab initio results

We study amorphous Ge quantum dots embedded in a crystalline Si matrix through structure modeling and simulation using ab initio density functional theory including spin-orbit interaction and quasiparticle effects. Three models are generated by replacing a spherical region within diamond Si by Ge atoms and creating a disordered bond network with appropriate density inside the Ge quantum dot. After total-energy optimisations of the atomic geometry we compute the electronic and optical properties. We find three major effects: (i) the resulting nanostructures adopt a type-I heterostructure character; (ii) the lowest optical transitions occur only within the Ge quantum dots, and do not involve or cross the Ge-Si interface. (iii) for larger amorphous Ge quantum dots, with diameters of about 2.0 and 2.7 nm, absorption peaks appear in the mid-infrared spectral region. These are promising candidates for intense luminescence at photon energies below the gap energy of bulk Ge.

Investigation of germanium quantum-well light sources

In this paper, we report a broad investigation of the optical properties of germanium (Ge) quantum-well devices. Our simulations show a significant increase of carrier density in the Ge quantum wells. Photoluminescence (PL) measurements show the enhanced direct-bandgap radiative recombination rates due to the carrier density increase in the Ge quantum wells. Electroluminescence (EL) measurements show the temperature-dependent properties of our Ge quantum-well devices, which are in good agreement with our theoretical models. We also demonstrate the PL measurements of Ge quantum-well microdisks using tapered-fiber collection method and quantify the optical loss of the Ge quantum-well structure from the measured PL spectra for the first time.

Computational Screening of 2D Materials for Photocatalysis

Two-dimensional (2D) materials exhibit a range of extraordinary electronic, optical, and mechanical properties different from their bulk counterparts with potential applications for 2D materials emerging in energy storage and conversion technologies. In this Perspective, we summarize the recent developments in the field of solar water splitting using 2D materials and review a computational screening approach to rapidly and efficiently discover more 2D materials that possess properties suitable for solar water splitting. Computational tools based on density-functional theory can predict the intrinsic properties of potential photocatalyst such as their electronic properties, optical absorbance, and solubility in aqueous solutions. Computational tools enable the exploration of possible routes to enhance the photocatalytic activity of 2D materials by use of mechanical strain, bias potential, doping, and pH. We discuss future research directions and needed method developments for the computational design and optimization of 2D materials for photocatalysis.

First-principles approach to calculating energy level alignment at aqueous semiconductor interfaces

A first-principles approach is demonstrated for calculating the relationship between an aqueous semiconductor interface structure and energy level alignment. The physical interface structure is sampled using density functional theory based molecular dynamics, yielding the interface electrostatic dipole. The  GW approach from many-body perturbation theory is used to place the electronic band edge energies of the semiconductor relative to the occupied 1b1 energy level in water. The application to the specific cases of nonpolar (101¯0) facets of GaN and ZnO reveals a significant role for the structural motifs at the interface, including the degree of interface water dissociation and the dynamical fluctuations in the interface Zn-O and O-H bond orientations. These effects contribute up to 0.5 eV.

Hybrid spin and valley quantum computing with singlet-triplet qubits

The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over the valley state opens new possibilities for quantum information processing. Combining qubits encoded in the singlet-triplet subspace of spin and valley states allows for universal QC using a universal two-qubit gate directly provided by the exchange interaction. We show how spin and valley qubits can be separated in order to allow for single-qubit rotations.

Nature of tunable hole g factors in quantum dots

We report an electric-field-induced giant modulation of the hole g factor in SiGe nanocrystals. The observed effect is ascribed to a so-far overlooked contribution to the g factor that stems from the mixing between heavy- and light-hole wave functions. We show that the relative displacement between the confined heavy- and light-hole states, occurring upon application of the electric field, alters their mixing strength leading to a strong nonmonotonic modulation of the g factor.

Tunneling through superlattices: the effect of anisotropy and kinematic coupling

The tunneling of carriers in stratified superlattice systems is analyzed in terms of the constituent effective mass tensor. The focus is on the effects on the tunneling which are caused by the side regions of an intervening barrier. Depending on the covalency and work function in the constituent layers of a superlattice, it is concluded that the kinematics in the regions on either side determined by the effective carrier mass and its interference with the band offset at heterojunctions leads to either a constructive or a destructive effect on the tunneling current. As an example, Si(1-x)Ge(x)/Si and Al(x)Ga(1-x)As/GaAs superlattices are demonstrated to reduce the tunneling current at certain fractional thicknesses and stoichiometries of the constituent slabs without affecting the lateral mobility. The findings show, in general, how manipulation of the carrier's effective mass tensor through stoichiometric/structural modulation of the heterostructure may be used to control the tunneling current through a given potential barrier, given that the characteristic de Broglie wavelength exceeds all the constituent dimensions, thus offering a method complementary to high-k technologies.

Electron transport in SiGe alloy nanowires in the ballistic regime from first-principles

Silicon-germanium alloying is emerging as one of the most promising strategies to engineer heat transport at the nanoscale. Here, we perform first-principles electron transport calculations to assess at what extent such approach can be followed without worsening the electrical conduction properties of the system, providing then a path toward high-efficiency thermoelectric materials.

Enhancement of thermoelectric properties by modulation-doping in silicon germanium alloy nanocomposites

Modulation-doping was theoretically proposed and experimentally proved to be effective in increasing the power factor of nanocomposites (Si(80)Ge(20))(70)(Si(100)B(5))(30) by increasing the carrier mobility but not the figure-of-merit (ZT) due to the increased thermal conductivity. Here we report an alternative materials design, using alloy Si(70)Ge(30) instead of Si as the nanoparticles and Si(95)Ge(5) as the matrix, to increase the power factor but not the thermal conductivity, leading to a ZT of 1.3 ± 0.1 at 900 °C.

Role of confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires

We examine the impact of shell content and the associated hole confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires (NWs). Using NWs with different Si(x)Ge(1-x) shell compositions (x = 0.5 and 0.7), we fabricate NW field-effect transistors (FETs) with highly doped source/drain and examine their characteristics dependence on shell content. The results demonstrate a 2-fold higher mobility at room temperature, and a 3-fold higher mobility at 77K in the NW FETs with higher (x = 0.7) Si shell content by comparison to those with lower (x = 0.5) Si shell content. Moreover, the carrier mobility shows a stronger temperature dependence in Ge-Si(x)Ge(1-x) core-shell NWs with high Si content, indicating a reduced charge impurity scattering. The results establish that carrier confinement plays a key role in realizing high mobility core-shell NW FETs.

Relaxation of a Strained Elastic Film on a Viscous Layer

Experiments were conducted with SiGe film islands on a layer of borophosphorosilicate glass (BPSG). Initially the SiGe is under compression. Upon annealing, the glass flows and the SiGe islands relax by both inplane expansion and wrinkling. This paper provides a two-dimensional (2D) model for inplane expansion. The results from the model are compared with the experiments with small SiGe islands. The effect of winkling, which is ignored in the present model, is discussed qualitatively.

Luminescence Processes in Si1-xGex/Si Heterostructures Grown by Chemical Vapor Deposition

Well-resolved band-edge exciton photoluminescence (PL) has been observed in strained Si1-xGex. heterostructures grown on Si(100) by rapid thermal chemical vapor deposition. The luminescence is due to shallow-impurity bound excitons at low temperatures (under 20K) and at higher temperatures is due to free excitons or electron-hole plasmas, depending on the pump power. The luminescence can also be electrically pumped, with both the electroluminescence and PL persisting above room temperature in samples with a sufficient bandgap offset. Loss of carrier confinement and subsequent non-radiative recombination outside the Si1-xGex. is found to be the reason for reduced PL and EL at high temperature.