High-pressure phase transitions in diamond and zinc-blende semiconductors

Different evolutionary pathways from B4 to B1 phase in AlN and InN: metadynamics investigations

Pressure-induced B4-B1 phase transitions of AlN and InN at ambient temperature are systematically investigated using density functional-based metadynamics simulations. A homogeneous deformation path, which is energetically favorable, is through a hexagonal structure for AlN, and through a tetragonal structure for InN. Furthermore, the dynamical stability, instead of the mechanical stability, is crucial to determining the phase-transition paths: the intermediate hexagonal structure can remain stable, whereas the tetragonal structure is always unstable. The B4 phase always shows the direct band gap before the occurrence of structure transition, while the band gap of stable intermediate hexagonal phase is indirect for AlN. Finally, the band gap of the ultimate cubic phase is direct for AlN and indirect for InN, due to the strong p-d repulsion at the R point.

Walking the path from B4- to B1-type structures in GaN

Molecular dynamics simulations are performed on the wurtzite-type structure (B4) to the rocksalt-type structure (B1) pressure-induced phase transition in GaN. From this, a nucleation and growth mechanism through a tetragonal metastable configuration is found. An intermediate of h-MgO type structure suggested from static calculations is ruled out. However, the pathway through the tetragonal intermediate may be altered by defect incorporation. While the overall transformation mechanism is preserved for both vacancies and Ga substitution by indium, already a 5% aluminum substitution establishes a transition route which avoids the tetragonal structure. Changes in the transformation mechanism and the resulting stabilization of the previously metastable high-pressure modification is elaborated by tracing the interplay of phase nucleation and growth and defect incorporation.

Ab initio calculation of the intrinsic spin Hall effect in semiconductors

Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs, and AlAs is large [approximately 100(planck/e)(Omega cm)(-1)], showing the possibility of a spin Hall effect beyond the four-band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors. Furthermore, it is found that the spin Hall effect can be strongly manipulated by strains, and that the ac spin Hall conductivity is large in pure as well as doped semiconductors.