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Zhao Y, Lu K, Yao J, Ning J, Chen B, Lu H, Zheng C. Strain evolution and confinement effect in InAs/AlAs short-period superlattices studied by Raman spectroscopy. Sci Rep 2023; 13:123. [PMID: 36599857 PMCID: PMC9812983 DOI: 10.1038/s41598-022-26368-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2022] [Accepted: 12/13/2022] [Indexed: 01/06/2023] Open
Abstract
Raman spectra of two series of InAs/AlAs short-period superlattices were measured at room temperature to investigate the impact of strain on the phonon modes taking into consideration the confinement effect and interface mode. The evolution of strain in the InAs layer and the AlAs layer was studied in (InAs)2/(AlAs)2 superlattices grown at various temperatures (400-550 °C). While the strain existed in the AlAs layer remained almost constant, the strain in the InAs layer varied significantly as the growth temperature increased from 500 to 550 °C. The confinement effect on the optical phonons was analyzed based on results from (InAs)n/(AlAs)n grown at 450 °C (n = 2, 3, 4, and 5). Additionally, the confinement effect was found to be stronger in shorter periods with higher interface quality. The interface phonon modes were resolved between the longitudinal optical and transverse optical phonon modes, which assist in the rough estimation of the thickness of the layers. The disorder-activated acoustic phonon modes at the low-frequency side were also addressed.
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Affiliation(s)
- Yinan Zhao
- grid.448631.c0000 0004 5903 2808Division of Natural and Applied Sciences, Duke Kunshan University, Kunshan, 215316 People’s Republic of China
| | - Kechao Lu
- grid.448631.c0000 0004 5903 2808Division of Natural and Applied Sciences, Duke Kunshan University, Kunshan, 215316 People’s Republic of China
| | - Jinshan Yao
- grid.41156.370000 0001 2314 964XNational Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093 People’s Republic of China
| | - Jiqiang Ning
- grid.8547.e0000 0001 0125 2443Department of Optical Science and Engineering, School of Information Science and Technology, Fudan University, Shanghai, 200438 People’s Republic of China
| | - Baile Chen
- grid.440637.20000 0004 4657 8879School of Information Science and Technology, ShanghaiTech University, Shanghai, 201210 People’s Republic of China ,Shanghai Engineering Research Center of Energy Efficient and Custom AI IC, Shanghai, 201210 People’s Republic of China
| | - Hong Lu
- grid.41156.370000 0001 2314 964XNational Laboratory of Solid State Microstructures, Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Nanjing University, Nanjing, 210093 People’s Republic of China ,grid.41156.370000 0001 2314 964XJiangsu Key Laboratory of Artificial Functional Materials, Nanjing University, Nanjing, 210093 People’s Republic of China
| | - Changcheng Zheng
- grid.448631.c0000 0004 5903 2808Division of Natural and Applied Sciences, Duke Kunshan University, Kunshan, 215316 People’s Republic of China
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Abstract
Transistor concepts based on semiconductor nanowires promise high performance, lower energy consumption and better integrability in various platforms in nanoscale dimensions. Concerning the intrinsic transport properties of electrons in nanowires, relatively high mobility values that approach those in bulk crystals have been obtained only in core/shell heterostructures, where electrons are spatially confined inside the core. Here, it is demonstrated that the strain in lattice-mismatched core/shell nanowires can affect the effective mass of electrons in a way that boosts their mobility to distinct levels. Specifically, electrons inside the hydrostatically tensile-strained gallium arsenide core of nanowires with a thick indium aluminium arsenide shell exhibit mobility values 30–50 % higher than in equivalent unstrained nanowires or bulk crystals, as measured at room temperature. With such an enhancement of electron mobility, strained gallium arsenide nanowires emerge as a unique means for the advancement of transistor technology. Semiconductor nanowires are promising candidates for the realization of novel transistor concepts. Here, the authors demonstrate that electron mobility in strained coaxial nanowire heterostructures can be higher than in the corresponding bulk crystals.
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Shen Y, Fang X, Ding X, Xiao H, Xiang X, Yang G, Jiang M, Zu X, Qiao L. Structural Features and Photoelectric Properties of Si-Doped GaAs under Gamma Irradiation. NANOMATERIALS 2020; 10:nano10020340. [PMID: 32079269 PMCID: PMC7075233 DOI: 10.3390/nano10020340] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/16/2020] [Revised: 02/08/2020] [Accepted: 02/12/2020] [Indexed: 11/24/2022]
Abstract
GaAs has been demonstrated to be a promising material for manufacturing semiconductor light-emitting devices and integrated circuits. It has been widely used in the field of aerospace, due to its high electron mobility and wide band gap. In this study, the structural and photoelectric characteristics of Si-doped GaAs under different gamma irradiation doses (0, 0.1, 1 and 10 KGy) are investigated. Surface morphology studies show roughen of the surface with irradiation. Appearance of transverse-optical (TO) phonon mode and blueshift of TO peak reflect the presence of internal strain with irradiation. The average strain has been measured to be 0.009 by Raman spectroscopy, indicating that the irradiated zone still has a good crystallinity even at a dose of 10 KGy. Photoluminescence intensity is increased by about 60% under 10 KGy gamma irradiation due to the strain suppression of nonradiative recombination centers. Furthermore, the current of Si-doped GaAs is reduced at 3V bias with the increasing gamma dose. This study demonstrates that the Si-doped GaAs has good radiation resistance under gamma irradiation, and appropriate level of gamma irradiation can be used to enhance the luminescence property of Si-doped GaAs.
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Affiliation(s)
- Ye Shen
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; (Y.S.); (M.J.); (X.Z.)
| | - Xuan Fang
- State Key Laboratory of High Power Semiconductor Lasers, School of Science, Changchun University of Science and Technology, Changchun 130022, China;
| | - Xiang Ding
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; (Y.S.); (M.J.); (X.Z.)
| | - Haiyan Xiao
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; (Y.S.); (M.J.); (X.Z.)
- Correspondence: (H.X.); (X.X.); Tel.: +86-28-8320-2130 (H.X.); +86-28-8320-2130 (X.X.)
| | - Xia Xiang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; (Y.S.); (M.J.); (X.Z.)
- Correspondence: (H.X.); (X.X.); Tel.: +86-28-8320-2130 (H.X.); +86-28-8320-2130 (X.X.)
| | - Guixia Yang
- Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 621900, China;
| | - Ming Jiang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; (Y.S.); (M.J.); (X.Z.)
| | - Xiaotao Zu
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; (Y.S.); (M.J.); (X.Z.)
| | - Liang Qiao
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; (Y.S.); (M.J.); (X.Z.)
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Balaghi L, Bussone G, Grifone R, Hübner R, Grenzer J, Ghorbani-Asl M, Krasheninnikov AV, Schneider H, Helm M, Dimakis E. Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch. Nat Commun 2019; 10:2793. [PMID: 31243278 PMCID: PMC6595053 DOI: 10.1038/s41467-019-10654-7] [Citation(s) in RCA: 49] [Impact Index Per Article: 9.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/19/2018] [Accepted: 05/20/2019] [Indexed: 11/09/2022] Open
Abstract
The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and compatible with the mainstream silicon technology. Here, we show that gallium arsenide nanowires grown epitaxially on silicon substrates exhibit a sizeable reduction of their bandgap by up to 40% when overgrown with lattice-mismatched indium gallium arsenide or indium aluminium arsenide shells. Specifically, we demonstrate that the gallium arsenide core sustains unusually large tensile strain with hydrostatic character and its magnitude can be engineered via the composition and the thickness of the shell. The resulted bandgap reduction renders gallium arsenide nanowires suitable for photonic devices across the near-infrared range, including telecom photonics at 1.3 and potentially 1.55 μm, with the additional possibility of monolithic integration in silicon-CMOS chips.
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Affiliation(s)
- Leila Balaghi
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062, Dresden, Germany
| | - Genziana Bussone
- PETRA III, Deutsches Elektronen-Synchrotron (DESY), 22607, Hamburg, Germany
| | - Raphael Grifone
- PETRA III, Deutsches Elektronen-Synchrotron (DESY), 22607, Hamburg, Germany
| | - René Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Jörg Grenzer
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Mahdi Ghorbani-Asl
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Arkady V Krasheninnikov
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Harald Schneider
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
| | - Manfred Helm
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany
- Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062, Dresden, Germany
| | - Emmanouil Dimakis
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328, Dresden, Germany.
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Francaviglia L, Giunto A, Kim W, Romero-Gomez P, Vukajlovic-Plestina J, Friedl M, Potts H, Güniat L, Tütüncüoglu G, Fontcuberta I Morral A. Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots. NANO LETTERS 2018; 18:2393-2401. [PMID: 29578722 DOI: 10.1021/acs.nanolett.7b05402] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Tuning light emission in bulk and quantum structures by strain constitutes a complementary method to engineer functional properties of semiconductors. Here, we demonstrate the tuning of light emission of GaAs nanowires and their quantum dots up to 115 meV by applying strain through an oxide envelope. We prove that the strain is highly anisotropic and clearly results in a component along the NW longitudinal axis, showing good agreement with the equations of uniaxial stress. We further demonstrate that the strain strongly depends on the oxide thickness, the oxide intrinsic strain, and the oxide microstructure. We also show that ensemble measurements are fully consistent with characterizations at the single-NW level, further elucidating the general character of the findings. This work provides the basic elements for strain-induced band gap engineering and opens new avenues in applications where a band-edge shift is necessary.
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Affiliation(s)
- Luca Francaviglia
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux , Ecole Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Andrea Giunto
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux , Ecole Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Wonjong Kim
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux , Ecole Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Pablo Romero-Gomez
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux , Ecole Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Jelena Vukajlovic-Plestina
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux , Ecole Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Martin Friedl
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux , Ecole Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Heidi Potts
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux , Ecole Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Lucas Güniat
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux , Ecole Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Gözde Tütüncüoglu
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux , Ecole Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Anna Fontcuberta I Morral
- Laboratoire des Matériaux Semiconducteurs, Institut des Matériaux , Ecole Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
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Lewis RB, Nicolai L, Küpers H, Ramsteiner M, Trampert A, Geelhaar L. Anomalous Strain Relaxation in Core-Shell Nanowire Heterostructures via Simultaneous Coherent and Incoherent Growth. NANO LETTERS 2017; 17:136-142. [PMID: 28001430 DOI: 10.1021/acs.nanolett.6b03681] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Nanoscale substrates such as nanowires allow heterostructure design to venture well beyond the narrow lattice mismatch range restricting planar heterostructures, owing to misfit strain relaxing at the free surfaces and partitioning throughout the entire nanostructure. In this work, we uncover a novel strain relaxation process in GaAs/InxGa1-xAs core-shell nanowires that is a direct result of the nanofaceted nature of these nanostructures. Above a critical lattice mismatch, plastically relaxed mounds form at the edges of the nanowire sidewall facets. The relaxed mounds and a coherent shell grow simultaneously from the beginning of the deposition with higher lattice mismatches increasingly favoring incoherent mound growth. This is in stark contrast to Stranski-Krastanov growth, where above a critical thickness coherent layer growth no longer occurs. This study highlights how understanding strain relaxation in lattice mismatched nanofaceted heterostructures is essential for designing devices based on these nanostructures.
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Affiliation(s)
- Ryan B Lewis
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Lars Nicolai
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Hanno Küpers
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Manfred Ramsteiner
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Achim Trampert
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
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Dong H, Sun J, Ma S, Liang J, Lu T, Liu X, Xu B. Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells. NANOSCALE 2016; 8:6043-6056. [PMID: 26926840 DOI: 10.1039/c5nr07938a] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
InGaAs/GaAsP multiple quantum wells (MQWs) were grown by metal-organic chemical vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0°, 2° and 15° towards [110]. The crystal structures of InGaAs/GaAsP were characterized by high-resolution X-ray diffraction and Raman spectroscopy. The surface morphologies of InGaAs/GaAsP MQWs were observed by atomic force microscopy. The mechanisms for step flow, step bunching and pyramid growth on 0°, 2° and 15° misoriented substrates were discussed. The results provide a comprehensive phenomenological understanding of the self-ordering mechanism of vicinal GaAs substrates, which could be harnessed for designing the quantum optical properties of low-dimensional systems. From low-temperature photoluminescence, it was observed that the luminescence from the MQWs grown on a vicinal surface exhibits a red-shift with respect to the 0° case. An extra emission was observed from the 2° and 15° off samples, indicating the characteristics of quantum wire and pyramidal self-controlled quantum-dot systems, respectively. Its absence from the PL spectrum on 0° surfaces indicates that indium segregation is modified on the surfaces. The relationship between InGaAs/GaAsP MQWs grown on vicinal substrates and their optical and structural properties was explained, which provides a technological basis for obtaining different self-controlled nanostructures.
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Affiliation(s)
- Hailiang Dong
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China
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Signorello G, Karg S, Björk MT, Gotsmann B, Riel H. Tuning the light emission from GaAs nanowires over 290 meV with uniaxial strain. NANO LETTERS 2013; 13:917-24. [PMID: 23237482 DOI: 10.1021/nl303694c] [Citation(s) in RCA: 61] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Strain engineering has been used to increase the charge carrier mobility of complementary metal-oxide-semiconductor transistors as well as to boost and tune the performance of optoelectronic devices, enabling wavelength tuning, polarization selectivity and suppression of temperature drifts. Semiconducting nanowires benefit from enhanced mechanical properties, such as increased yield strength, that turn out to be beneficial to amplify strain effects. Here we use photoluminescence (PL) to study the effect of uniaxial stress on the electronic properties of GaAs/Al0.3Ga0.7As/GaAs core/shell nanowires. Both compressive and tensile mechanical stress were applied continuously and reversibly to the nanowire, resulting in a remarkable decrease of the bandgap of up to 296 meV at 3.5% of strain. Raman spectra were measured and analyzed to determine the axial strain in the nanowire and the Poisson ratio in the <111> direction. In both PL and Raman spectra, we observe fingerprints of symmetry breaking due to anisotropic deformation of the nanowire. The shifts observed in the PL and Raman spectra are well described by bulk deformation potentials for band structure and phonon energies. The fact that exceptionally high elastic strain can be applied to semiconducting nanowires makes them ideally suited for novel device applications that require a tuning of the band structure over a broad range.
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9
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Montazeri M, Fickenscher M, Smith LM, Jackson HE, Yarrison-Rice J, Kang JH, Gao Q, Tan HH, Jagadish C, Guo Y, Zou J, Pistol ME, Pryor CE. Direct measure of strain and electronic structure in GaAs/GaP core-shell nanowires. NANO LETTERS 2010; 10:880-886. [PMID: 20131863 DOI: 10.1021/nl903547r] [Citation(s) in RCA: 14] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Highly strained GaAs/GaP nanowires of excellent optical quality were grown with 50 nm diameter GaAs cores and 25 nm GaP shells. Photoluminescence from these nanowires is observed at energies dramatically shifted from the unstrained GaAs free exciton emission energy by 260 meV. Using Raman scattering, we show that it is possible to separately measure the degree of compressive and shear strain of the GaAs core and show that the Raman response of the GaP shell is consistent with tensile strain. The Raman and photoluminescence measurement are both on good agreement with 8 band k.p calculations. This result opens up new possibilities for engineering the electronic properties of the nanowires for optimal design of one-dimensional nanodevices by controlling the strain of the core and shell by varying the nanowire geometry.
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Affiliation(s)
- Mohammad Montazeri
- Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0011, USA
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Cardona M, Anastassakis E. Strain-induced shifts of the infrared-active phonon of cubic boron nitride. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:14888-14891. [PMID: 9985528 DOI: 10.1103/physrevb.54.14888] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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12
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Tribe WR, Klipstein PC, Smith GW, Grey R. Uniaxial-stress investigation of the phonon-assisted recombination mechanisms associated with the X states in type-II GaAs/AlAs superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:8721-8727. [PMID: 9984550 DOI: 10.1103/physrevb.54.8721] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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13
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Fahy S. Erratum: Calculation of the strain-induced shifts in the infrared-absorption peaks of cubic boron nitride. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:11884. [PMID: 9982822 DOI: 10.1103/physrevb.53.11884] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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14
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Eryigit R, Herman IP. Lattice properties of strained GaAs, Si, and Ge using a modified bond-charge model. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:7775-7784. [PMID: 9982223 DOI: 10.1103/physrevb.53.7775] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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15
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Spencer GS, Menéndez J, Pfeiffer LN, West KW. Optical-phonon Raman-scattering study of short-period GaAs-AlAs superlattices: An examination of interface disorder. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:8205-8218. [PMID: 9979819 DOI: 10.1103/physrevb.52.8205] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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16
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Ager JW, Drory MD. Quantitative measurement of residual biaxial stress by Raman spectroscopy in diamond grown on a Ti alloy by chemical vapor deposition. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:2601-2607. [PMID: 10008655 DOI: 10.1103/physrevb.48.2601] [Citation(s) in RCA: 78] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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17
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Emura S, Soni RK, Gonda S. Interfacial stress in strained-ultrathin-layer (InAs)2/(GaAs)1 superlattice. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:1463-1467. [PMID: 10003787 DOI: 10.1103/physrevb.46.1463] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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18
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Venkateswaran UD, Cui LJ, Weinstein BA, Chambers FA. Forward and reverse high-pressure transitions in bulklike AlAs and GaAs epilayers. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:9237-9247. [PMID: 10000789 DOI: 10.1103/physrevb.45.9237] [Citation(s) in RCA: 35] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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19
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Pistol M, Liu X. Quantum-well structures of direct-band-gap GaAs1-xPx/GaAs studied by photoluminescence and Raman spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:4312-4319. [PMID: 10002048 DOI: 10.1103/physrevb.45.4312] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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20
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Pistol M, Gerling M, Hessman D, Samuelson L. Properties of thin strained layers of GaAs grown on InP. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:3628-3635. [PMID: 10001943 DOI: 10.1103/physrevb.45.3628] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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22
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Santini P, Miglio L, Benedek G, Harten U, Ruggerone P, Toennies JP. Dynamics and structural assessment of open semiconductor surfaces: GaAs(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:11942-11945. [PMID: 9995508 DOI: 10.1103/physrevb.42.11942] [Citation(s) in RCA: 35] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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23
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Anastassakis E, Cantarero A, Cardona M. Piezo-Raman measurements and anharmonic parameters in silicon and diamond. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:7529-7535. [PMID: 9993044 DOI: 10.1103/physrevb.41.7529] [Citation(s) in RCA: 124] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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24
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Alexandrou A, Trallero-Giner C, Cantarero A, Cardona M. Theoretical model of stress-induced triply resonant Raman scattering. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:1603-1610. [PMID: 9992015 DOI: 10.1103/physrevb.40.1603] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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25
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Anastassakis E, Raptis YS, Hünermann M, Richter W, Cardona M. Raman and infrared phonon piezospectroscopy in InP. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:7702-7709. [PMID: 9945497 DOI: 10.1103/physrevb.38.7702] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Iikawa F, Cerdeira F, Vazquez-Lopez C, Motisuke P, Sacilotti MA, Roth AP, Masut RA. Optical studies in InxGa. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:8473-8476. [PMID: 9945611 DOI: 10.1103/physrevb.38.8473] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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