Noise exponents of the random resistor network

Green's functions for random resistor networks

We analyze random resistor networks through a study of lattice Green's functions in arbitrary dimensions. We develop a systematic disorder perturbation expansion to describe the weak disorder regime of such a system. We use this formulation to compute ensemble-averaged nodal voltages and bond currents in a hierarchical fashion. We verify the validity of this expansion with direct numerical simulations of a square lattice with resistances at each bond exponentially distributed. Additionally, we construct a formalism to recursively obtain the exact Green's functions for finitely many disordered bonds. We provide explicit expressions for lattices with up to four disordered bonds, which can be used to predict nodal voltage distributions for arbitrarily large disorder strengths. Finally, we introduce a novel order parameter that measures the overlap between the bond current and the optimal path (the path of least resistance), for a given resistance configuration, which helps to characterize the weak and strong disorder regimes of the system.

Linear polymers in disordered media: the shortest, the longest, and the mean self-avoiding walk on percolation clusters

Long linear polymers in strongly disordered media are well described by self-avoiding walks (SAWs) on percolation clusters and a lot can be learned about the statistics of these polymers by studying the length distribution of SAWs on percolation clusters. This distribution encompasses 2 distinct averages, viz., the average over the conformations of the underlying cluster and the SAW conformations. For the latter average, there are two basic options, one being static and one being kinetic. It is well known for static averaging that if the disorder of the underlying medium is weak, this disorder is redundant in the sense the renormalization group; i.e., differences to the ordered case appear merely in nonuniversal quantities. Using dynamical field theory, we show that the same holds true for kinetic averaging. Our main focus, however, lies on strong disorder, i.e., the medium being close to the percolation point, where disorder is relevant. Employing a field theory for the nonlinear random resistor network in conjunction with a real-world interpretation of the corresponding Feynman diagrams, we calculate the scaling exponents for the shortest, the longest, and the mean or average SAW to 2-loop order. In addition, we calculate to 2-loop order the entire family of multifractal exponents that governs the moments of the the statistical weights of the elementary constituents (bonds or sites of the underlying fractal cluster) contributing to the SAWs. Our RG analysis reveals that kinetic averaging leads to renormalizability whereas static averaging does not, and hence, we argue that the latter does not lead to a well-defined scaling limit. We discuss the possible implications of this finding for experiments and numerical simulations which have produced widespread results for the exponent of the average SAW. To corroborate our results, we also study the well-known Meir-Harris model for SAWs on percolation clusters. We demonstrate that the Meir-Harris model leads back up to 2-loop order to the renormalizable real-world formulation with kinetic averaging if the replica limit is consistently performed at the first possible instant in the course of the calculation.

Multifractality in a broad class of disordered systems

We study multifractality in a broad class of disordered systems which includes, e.g., the diluted x-y model. Using renormalized field theory we analyze the scaling behavior of cumulant averaged dynamical variables (in case of the x-y model the angles specifying the directions of the spins) at the percolation threshold. Each of the cumulants has its own independent critical exponent, i.e., there are infinitely many critical exponents involved in the problem. Working out the connection to the random resistor network, we determine these multifractal exponents to two-loop order. Depending on the specifics of the Hamiltonian of each individual model, the amplitudes of the higher cumulants can vanish and in this case, effectively, only some of the multifractal exponents are required.

Corrections to scaling in random resistor networks and diluted continuous spin models near the percolation threshold

We investigate corrections to scaling induced by irrelevant operators in randomly diluted systems near the percolation threshold. The specific systems that we consider are the random resistor network and a class of continuous spin systems, such as the x-y model. We focus on a family of least irrelevant operators and determine the corrections to scaling that originate from this family. Our field theoretic analysis carefully takes into account that irrelevant operators mix under renormalization. It turns out that long standing results on corrections to scaling are respectively incorrect (random resistor networks) or incomplete (continuous spin systems).

Logarithmic corrections to scaling in critical percolation and random resistor networks

We study the critical behavior of various geometrical and transport properties of percolation in six dimensions. By employing field theory and renormalization group methods we analyze fluctuation induced logarithmic corrections to scaling up to and including the next-to-leading order correction. Our study comprehends the percolation correlation function, i.e., the probability that two given points are connected, and some of the fractal masses describing percolation clusters. To be specific, we calculate the mass of the backbone, the red bonds, and the shortest path. Moreover, we study key transport properties of percolation as represented by the random resistor network. We investigate the average two-point resistance as well as the entire family of multifractal moments of the current distribution.

Multifractal current distribution in random-diode networks

Recently it has been shown analytically that electric currents in a random-diode network are distributed in a multifractal manner [O. Stenull and H. K. Janssen, Europhys. Lett. 55, 691 (2001)]. In the present paper we investigate the multifractal properties of a random diode network at the critical point by numerical simulations. We analyze the currents running on a directed percolation cluster and confirm the field-theoretic predictions for the scaling behavior of moments of the current distribution. It is pointed out that a random diode network is a particularly good candidate for a possible experimental realization of directed percolation.

Multifractal properties of resistor diode percolation

Focusing on multifractal properties we investigate electric transport on random resistor diode networks at the phase transition between the nonpercolating and the directed percolating phase. Building on first principles such as symmetries and relevance we derive a field theoretic Hamiltonian. Based on this Hamiltonian we determine the multifractal moments of the current distribution that are governed by a family of critical exponents [psi(l)]. We calculate the family [psi(l)] to two-loop order in a diagrammatic perturbation calculation augmented by renormalization group methods.

Effects of surfaces on resistor percolation

We study the effects of surfaces on resistor percolation at the instance of a semi-infinite geometry. Particularly we are interested in the average resistance between two connected ports located on the surface. Based on general grounds as symmetries and relevance we introduce a field theoretic Hamiltonian for semi-infinite random resistor networks. We show that the surface contributes to the average resistance only in terms of corrections to scaling. These corrections are governed by surface resistance exponents. We carry out renormalization-group improved perturbation calculations for the special and the ordinary transition. We calculate the surface resistance exponents phiS and phiS(infinity) for the special and the ordinary transition, respectively, to one-loop order.

Noisy random resistor networks: renormalized field theory for the multifractal moments of the current distribution

We study the multifractal moments of the current distribution in randomly diluted resistor networks near the percolation threshold. When an external current is applied between two terminals x and x(') of the network, the lth multifractal moment scales as M((l))(I)(x,x(')) approximately equal /x-x'/(psi(l)/nu), where nu is the correlation length exponent of the isotropic percolation universality class. By applying our concept of master operators [Europhys. Lett. 51, 539 (2000)] we calculate the family of multifractal exponents [psi(l)] for l>or=0 to two-loop order. We find that our result is in good agreement with numerical data for three dimensions.

Scaling law of resistance fluctuations in stationary random resistor networks

In a random resistor network we consider the simultaneous evolution of two competing random processes consisting in breaking and recovering the elementary resistors with probabilities W(D) and W(R). The condition W(R)>W(D)/(1+W(D)) leads to a stationary state, while in the opposite case, the broken resistor fraction reaches the percolation threshold p(c). We study the resistance noise of this system under stationary conditions by Monte Carlo simulations. The variance of resistance fluctuations <deltaR2> is found to follow a scaling law |p-p(c)|(-kappa(0)) with kappa(0) = 5.5. The proposed model relates quantitatively the defectiveness of a disordered media with its electrical and excess-noise characteristics.

Diluted networks of nonlinear resistors and fractal dimensions of percolation clusters

We study random networks of nonlinear resistors, which obey a generalized Ohm's law V approximately Ir. Our renormalized field theory, which thrives on an interpretation of the involved Feynman diagrams as being resistor networks themselves, is presented in detail. By considering distinct values of the nonlinearity r, we calculate several fractal dimensions characterizing percolation clusters. For the dimension associated with the red bonds we show that dred = 1/nu at least to order O(epsilon 4), with nu being the correlation length exponent, and epsilon = 6 - d, where d denotes the spatial dimension. This result agrees with a rigorous one by Coniglio. Our result for the chemical distance, dmin = 2 - epsilon/6 - [937/588 + 45/49(ln 2 - 9/10 ln 3)](epsilon/6)2 + O(epsilon 3) verifies a previous calculation by one of us. For the backbone dimension we find DB = 2 + epsilon/21 - 172 epsilon 2/9261 + 2[-74639 + 22680 zeta(3)]epsilon 3/4084101 + O(epsilon 4), where zeta(3) = 1.202057..., in agreement to second order in epsilon with a two-loop calculation by Harris and Lubensky.

Critical exponents for diluted resistor networks

An approach by Stephen [Phys. Rev. B 17, 4444 (1978)] is used to investigate the critical properties of randomly diluted resistor networks near the percolation threshold by means of renormalized field theory. We reformulate an existing field theory by Harris and Lubensky [Phys. Rev. B 35, 6964 (1987)]. By a decomposition of the principal Feynman diagrams, we obtain diagrams which again can be interpreted as resistor networks. This interpretation provides for an alternative way of evaluating the Feynman diagrams for random resistor networks. We calculate the resistance crossover exponent phi up to second order in epsilon=6-d, where d is the spatial dimension. Our result phi=1+epsilon/42+4epsilon(2)/3087 verifies a previous calculation by Lubensky and Wang, which itself was based on the Potts-model formulation of the random resistor network.