High-pressure phases of III-V zinc-blende semiconductors

Pressure-Induced Large Volume Collapse, Plane-to-Chain, Insulator to Metal Transition in CaMn2Bi2

In situ high pressure single crystal X-ray diffraction study reveals that the quantum material CaMn₂Bi₂ undergoes a unique plane to chain structural transition between 2 and 3 GPa, accompanied by a large volume collapse. Puckered Mn-Mn honeycomb layer converts to quasi-one-dimensional (1D) zigzag chains above the phase transition pressure. Single crystal measurements reveal that the pressure-induced structural transformation is accompanied by a dramatic 2 orders of magnitude drop of resistivity. Although the ambient pressure phase displays semiconducting behavior at low temperatures, metallic temperature dependent resistivity is observed for the high pressure phase, as surprisingly, are two resistivity anomalies with opposite pressure dependences, while one of them could be a magnetic transition and the other originates from Fermi surface instability. Assessment of the total energies for hypothetical magnetic structures for high pressure CaMn₂Bi₂ indicates that ferrimagnetism is thermodynamically favored.

BAND STRUCTURE, METALLIZATION AND SUPERCONDUCTIVITY OF InP AND InN UNDER HIGH PRESSURE

The electronic band structure, structural phase transition, metallization and superconducting transition of cubic zinc blende type indium phosphide (InP) and indium nitride (InN), under pressure, are studied using FP-LMTO method. These indium compounds become metals and superconductors under high pressure but before that they undergo structural phase transition from ZnS to NaCl structure. The ground state properties and band gap values are compared with the experimental and previous theoretical results. From our analysis, it is found that the metallization pressure increases with increase of lattice constant. The superconducting transition temperatures (Tc) of InP and InN are obtained as a function of pressure for both the ZnS and NaCl structures and these compounds are identified as pressure induced superconductors. When pressure is increased Tc increases in both the normal ( ZnS ) and high pressure ( NaCl ) structures. The dependence of Tc on electron–phonon mass enhancement factor λ shows that InP and InN are electron–phonon mediated superconductors. The non-occurrence of metallization, phase transition and onset of superconductivity simultaneously in InP and InN is confirmed.

BAND STRUCTURE, METALLIZATION, AND SUPERCONDUCTIVITY OF GaAs AND InAs UNDER HIGH PRESSURE

The electronic band structure, metallization, structural phase transition, and superconductivity of cubic zinc blende type GaAs and InAs are investigated. The equilibrium lattice constant, bulk modulus, and the phase transition pressure at which the compounds undergo structural phase transition from ZnS to NaCl are predicted from the total energy calculations. The density of states at the Fermi level (N(E F )) get enhanced after metallization, which leads to the superconductivity in GaAs and InAs . The superconducting transition temperatures (T c ) of GaAs and InAs are obtained as a function of pressure for both the ZnS and NaCl structures. GaAs and InAs come under the class of pressure-induced superconductors. When pressure is increased T c increases in both the normal and high pressure-structures. The dependence of T c on electron–phonon mass enhancement factor λ shows that GaAs and InAs are electron–phonon-mediated superconductors. Also, it is found that GaAs and InAs retained in their normal structure under high pressure give appreciably high T c .

An effective interaction potential for gallium phosphide

An effective interatomic potential consisting of two- and three-body covalent interactions is used here to study the properties of gallium phosphide by molecular dynamics simulations. The many-body interatomic potential accounts for the energy scale, length scale and mechanical properties of GaP. At atmospheric pressure, the calculated melting temperature, linear thermal expansion, vibrational density of states and specific heat are in excellent agreement with experimental results. The structural phase transition induced by hydrostatic pressure at 27 GPa is also in quite good agreement with experimental findings. We also studied the energy of vacancy formation in the GaP lattice and the surface energy, which is in reasonable agreement with experimental data.

The pressure-induced phase transition of mechanically alloyed nanocrystalline GaSb

Ga K-edge energy dispersive x-ray absorption spectroscopy and Raman spectroscopy measurements were employed to follow the pressure-induced semiconductor-metal phase transition of nanocrystalline GaSb produced by mechanical alloying up to 26 GPa. The results showed a slight increase of the phase transition pressures for both as-milled (8 GPa) and annealed (10 GPa) GaSb samples, as compared to that for the bulk one. The extended x-ray absorption fine structure analysis of the zinc blende (ZB) pressure domain (<10 GPa) showed that the microscopic compressibility of the bonds in the as-milled/annealed samples is higher/lower than the crystalline bulk modulus (56 GPa). The comparison between x-ray absorption near edge structure regions of the spectra and multiple scattering calculations suggests that the ZB structure evolves to a short-range chemically ordered β-Sn structure for pressures as high as 8 GPa. Raman measurements confirm the semiconductor-metal phase transitions of ZB-GaSb between 8 and 11 GPa for both as-milled and annealed samples, showing that the semiconductor character was not recovered on releasing the pressure down to 3.9 and 1.8 GPa, indicating a very strong hysteresis effect (or even irreversible transitions). The well-known transverse effective charge reduction with pressure was also observed. Furthermore, resonance behaviour is clearly seen for transverse optical phonons and the resonance maxima peak occurs at about 1.2 GPa, corresponding to 2.11 eV in the E(1) scale, smaller by 0.3 eV than the incident photon energy.

Grain Boundaries in Gallium Arsenide Nanocrystals Under Pressure: A Parallel Molecular-Dynamics Study

Structural transformation in gallium arsenide nanocrystals under pressure is studied using molecular-dynamics simulations on parallel computers. It is found that the transformation from fourfold to sixfold coordination is nucleated on the nanocrystal surface and proceeds inwards with increasing pressure. Inequivalent nucleation of the high-pressure phase at different sites leads to inhomogeneous deformation of the nanocrystal. This results in the transformed nanocrystal having grains of different orientations separated by grain boundaries. A new method based on microscopic transition paths is introduced to uniquely characterize grains and deformations.