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Zhang B, Huang Y, Stehr JE, Chen PP, Wang XJ, Lu W, Chen WM, Buyanova IA. Band Structure of Wurtzite GaBiAs Nanowires. NANO LETTERS 2019; 19:6454-6460. [PMID: 31424943 DOI: 10.1021/acs.nanolett.9b02679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
We report on the first successful growth of wurtzite (WZ) GaBiAs nanowires (NWs) and reveal the effects of Bi incorporation on the electronic band structure by using polarization-resolved optical spectroscopies performed on individual NWs. Experimental evidence of a decrease in the band-gap energy and an upward shift of the topmost three valence subbands upon the incorporation of Bi atoms is provided, whereas the symmetry and ordering of the valence band states remain unchanged, that is, Γ9, Γ7, and Γ7 within the current range of Bi compositions. The extraordinary valence band structure of WZ GaBiAs NWs is explained by anisotropic hybridization and anticrossing between p-like Bi states and the extended valence band states of host WZ GaAs. Moreover, the incorporation of Bi into GaAs is found to significantly reduce the temperature sensitivity of the band-gap energy in WZ GaBiAs NWs. Our work therefore demonstrates that utilizing dilute bismide alloys provides new avenues for band-gap engineering and thus photonic engineering with NWs.
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Affiliation(s)
- Bin Zhang
- Department of Physics, Chemistry and Biology , Linköping University , S-581 83 Linköping , Sweden
- State Key Laboratory of Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , China
| | - Yuqing Huang
- Department of Physics, Chemistry and Biology , Linköping University , S-581 83 Linköping , Sweden
| | - Jan Eric Stehr
- Department of Physics, Chemistry and Biology , Linköping University , S-581 83 Linköping , Sweden
| | - Ping-Ping Chen
- State Key Laboratory of Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , China
| | - Xing-Jun Wang
- State Key Laboratory of Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , China
| | - W Lu
- State Key Laboratory of Infrared Physics , Shanghai Institute of Technical Physics, Chinese Academy of Sciences , Shanghai 200083 , China
| | - Weimin M Chen
- Department of Physics, Chemistry and Biology , Linköping University , S-581 83 Linköping , Sweden
| | - Irina A Buyanova
- Department of Physics, Chemistry and Biology , Linköping University , S-581 83 Linköping , Sweden
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Zhou W, Chen XJ, Zhang JB, Li XH, Wang YQ, Goncharov AF. Vibrational, electronic and structural properties of wurtzite GaAs nanowires under hydrostatic pressure. Sci Rep 2014; 4:6472. [PMID: 25253566 PMCID: PMC4174565 DOI: 10.1038/srep06472] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/14/2014] [Accepted: 08/18/2014] [Indexed: 11/09/2022] Open
Abstract
The structural, vibrational, and electronic properties of GaAs nanowires have been studied in the metastable wurtzite phase via Resonant Raman spectroscopy and synchrotron X-ray diffraction measurements in diamond anvil cells under hydrostatic conditions between 0 and 23 GPa. The direct band gap E0 and the crystal field split-off gap E0 + Δ of wurtzite GaAs increase with pressure and their values become close to those of zinc-blende GaAs at 5 GPa, while being reported slightly larger at lower pressures. Above 21 GPa, a complete structural transition from the wurtzite to an orthorhombic phase is observed in both Raman and X-ray diffraction experiments.
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Affiliation(s)
- Wei Zhou
- Key Laboratory of Materials Physics and Center for Energy Matter in Extreme Environments, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Xiao-Jia Chen
- 1] Key Laboratory of Materials Physics and Center for Energy Matter in Extreme Environments, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China [2] Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Jian-Bo Zhang
- Department of Physics, South China University of Technology, Guangzhou 510640, China
| | - Xin-Hua Li
- Key Laboratory of Materials Physics and Center for Energy Matter in Extreme Environments, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Yu-Qi Wang
- Key Laboratory of Materials Physics and Center for Energy Matter in Extreme Environments, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Alexander F Goncharov
- 1] Key Laboratory of Materials Physics and Center for Energy Matter in Extreme Environments, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China [2] Geophysical Laboratory, Carnegie Institution of Washington, Washington D.C. 20015, U.S.A
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Holtz M, Seon M, Brafman O, Manor R, Fekete D. Pressure dependence of the optic phonon energies in AlxGa1-xAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:8714-8720. [PMID: 9984549 DOI: 10.1103/physrevb.54.8714] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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García-Cristóbal A, Cantarero A, Trallero-Giner C, Cardona M. Excitonic model for second-order resonant Raman scattering. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:13430-13445. [PMID: 10010279 DOI: 10.1103/physrevb.49.13430] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Rösch M, Atzmüller R, Schaack G, Becker CR. Resonant Raman scattering in a zero-gap semiconductor: Interference effects and deformation potentials at the E1 and E1+ Delta 1 gaps of HgTe. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:13460-13474. [PMID: 10010282 DOI: 10.1103/physrevb.49.13460] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Sinha K, Mascarenhas A, Horner GS, Alonso RG, Bertness KA, Olson JM. Resonance Raman study of spontaneous ordering in GaInP2. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:17591-17594. [PMID: 10008380 DOI: 10.1103/physrevb.48.17591] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Limmer W, Bauer S, Leiderer H, Gebhardt W, Cantarero A, Trallero-Giner C, Cardona M. One-LO-phonon resonant Raman scattering in wide-gap diluted magnetic semiconductors. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:11709-11720. [PMID: 10001186 DOI: 10.1103/physrevb.45.11709] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Trallero-Giner C, Cantarero A, Cardona M, Mora M. Impurity-induced resonant Raman scattering. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:6601-6613. [PMID: 10000420 DOI: 10.1103/physrevb.45.6601] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Logothetidis S, Cardona M, Garriga M. Temperature dependence of the dielectric function and the interband critical-point parameters of AlxGa1-xAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:11950-11965. [PMID: 9996971 DOI: 10.1103/physrevb.43.11950] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Limmer W, Leiderer H, Jakob K, Gebhardt W, Kauschke W, Cantarero A, Trallero-Giner C. Resonant Raman scattering by longitudinal-optical phonons in Zn1-xMnxSe (x=0, 0.03, 0.1) near the E0 gap. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:11325-11334. [PMID: 9995421 DOI: 10.1103/physrevb.42.11325] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Gavrilenko VI, Martnez D, Cantarero A, Cardona M, Trallero-Giner C. Resonant first- and second-order Raman scattering in AlSb. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:11718-11724. [PMID: 9995477 DOI: 10.1103/physrevb.42.11718] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Vorlek V, Gregora I, Kauschke W, Menéndez J, Cardona M. Raman scattering by the coupled plasmon-LO-phonon modes near the E0+ Delta 0 gap of n-type GaAs: Resonance and interference effects. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:5802-5808. [PMID: 9996166 DOI: 10.1103/physrevb.42.5802] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Logothetidis S, Alouani M, Garriga M, Cardona M. E2 interband transitions in AlxGa1-xAs alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:2959-2965. [PMID: 9994065 DOI: 10.1103/physrevb.41.2959] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Cantarero A, Trallero-Giner C, Cardona M. Excitons in one-phonon resonant Raman scattering: Fröhlich and interference effects. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:12290-12295. [PMID: 9991860 DOI: 10.1103/physrevb.40.12290] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Brener I, Cohen E, Muranevich A, Triboulet R. Resonant Raman scattering mediated by intrinsic excitons in Cd1-xZnxTe (x~0.5). PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:8313-8318. [PMID: 9991289 DOI: 10.1103/physrevb.40.8313] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Trallero-Giner C, Cantarero A, Cardona M. One-phonon resonant Raman scattering: Fröhlich exciton-phonon interaction. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:4030-4036. [PMID: 9992377 DOI: 10.1103/physrevb.40.4030] [Citation(s) in RCA: 29] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Trallero-Giner C, Gavrilenko VI, Cardona M. Resonant Raman scattering by LO phonons in AlxGa1-xAs (0.2<x<0.7): Exciton broadening and alloying effects. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:1238-1243. [PMID: 9991948 DOI: 10.1103/physrevb.40.1238] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Cantarero A, Trallero-Giner C, Cardona M. Excitons in one-phonon resonant Raman scattering: Deformation-potential interaction. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:8388-8397. [PMID: 9947550 DOI: 10.1103/physrevb.39.8388] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Trallero-Giner C, Alexandrou A, Cardona M. Exciton effects in stress-induced doubly resonant Raman scattering: GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 38:10744-10748. [PMID: 9945930 DOI: 10.1103/physrevb.38.10744] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Kauschke W, Vorlícek V, Cardona M. Resonant Raman scattering in GaP: Excitonic and interference effects near the E0 and E0+ Delta 0 gaps. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 36:9129-9133. [PMID: 9942774 DOI: 10.1103/physrevb.36.9129] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Kauschke W, Mestres N, Cardona M. Resonant Raman scattering by plasmons and LO phonons near the E1 and E1+ Delta 1 gaps of GaSb. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 36:7469-7485. [PMID: 9942514 DOI: 10.1103/physrevb.36.7469] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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Lautenschlager P, Garriga M, Logothetidis S, Cardona M. Interband critical points of GaAs and their temperature dependence. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 35:9174-9189. [PMID: 9941315 DOI: 10.1103/physrevb.35.9174] [Citation(s) in RCA: 746] [Impact Index Per Article: 20.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Kauschke W, Cardona M. Resonant Raman scattering by LO phonons near the E0+ Delta 0 gap of GaSb. PHYSICAL REVIEW. B, CONDENSED MATTER 1987; 35:9619-9624. [PMID: 9941388 DOI: 10.1103/physrevb.35.9619] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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