Munkholm A, Brennan S. Ordering in thermally oxidized silicon.
PHYSICAL REVIEW LETTERS 2004;
93:036106. [PMID:
15323842 DOI:
10.1103/physrevlett.93.036106]
[Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2004] [Indexed: 05/24/2023]
Abstract
We present new evidence and a model for residual ordering of silicon atoms within the oxide of thermally oxidized silicon wafers. X-ray scattering is used to observe the residual order in thermally grown SiO2 on Si(001), (011), and (111) surfaces with thicknesses of 60 to 1000 A, for both on-axis and miscut surfaces. In every case, the scattering position can be predicted using a model which expands the silicon lattice during oxidation without completely disordering it. The amount of expansion and disorder is dependent on the type of oxidation process employed.
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