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For: Ni W, Knall J, Hansson GV. New method to study band offsets applied to strained Si/Si1-xGex(100) heterojunction interfaces. Phys Rev B Condens Matter 1987;36:7744-7747. [PMID: 9942570 DOI: 10.1103/physrevb.36.7744] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
Number Cited by Other Article(s)
1
Jin EN, Hardy MT, Mock AL, Lyons JL, Kramer AR, Tadjer MJ, Nepal N, Katzer DS, Meyer DJ. Band Alignment of ScxAl1-xN/GaN Heterojunctions. ACS APPLIED MATERIALS & INTERFACES 2020;12:52192-52200. [PMID: 33146516 DOI: 10.1021/acsami.0c15912] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
2
Zheng M, Lin S, Xu L, Zhu L, Wang ZL. Scanning Probing of the Tribovoltaic Effect at the Sliding Interface of Two Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020;32:e2000928. [PMID: 32270901 DOI: 10.1002/adma.202000928] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/10/2020] [Revised: 03/16/2020] [Accepted: 03/17/2020] [Indexed: 06/11/2023]
3
Ni WX, Hansson GV. Band offsets in pseudomorphically grown Si/Si1-xGex heterostructures studied with core-level x-ray photoelectron spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;42:3030-3037. [PMID: 9995796 DOI: 10.1103/physrevb.42.3030] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Pearsall TP, Bevk J, Bean JC, Bonar J, Mannaerts JP, Ourmazd A. Electronic structure of Ge/Si monolayer strained-layer superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;39:3741-3757. [PMID: 9948696 DOI: 10.1103/physrevb.39.3741] [Citation(s) in RCA: 43] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
5
Schwartz GP, Hybertsen MS, Bevk J, Nuzzo RG, Mannaerts JP, Gualtieri GJ. Core-level photoemission measurements of valence-band offsets in highly strained heterojunctions: Si-Ge system. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;39:1235-1241. [PMID: 9948308 DOI: 10.1103/physrevb.39.1235] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
6
Menéndez J. Tetrahedral semiconductors: Constancy of the midgap energies with respect to the vacuum level. PHYSICAL REVIEW. B, CONDENSED MATTER 1988;38:6305-6307. [PMID: 9947097 DOI: 10.1103/physrevb.38.6305] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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