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Little B, Shan W, Song J, Feng Z, Schurman M, Stall R. Optical Studies of MOCVD InxGa1-xN Alloys. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-449-823] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
ABSTRACTWe present the results of optical studies of InxGa1-xN alloys (0<x<0.2) grown by metalorganic chemical vapor deposition on top of thick GaN epitaxial layers with sapphire as substrates. Photoluminescence (PL) and photoreflectance (PR) measurements were performed at various temperatures to determine the band gap and its variation as a function of temperature for samples with different indium concentrations. Carrier recombination dynamics in the alloy samples were studied using time-resolved luminescence spectroscopy. While the measured decay time for the alloy near-band-edge PL emissions was observed to be generally around a few hundred picoseconds at 10 K, it was found that the decay time decreased rapidly as the sample temperatures increased. This indicates a strong influence of temperature on the processes of trapping and recombination of excited carriers at impurities and defects in the InGaN alloys.
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Yu Z, Hofer SG, Giles NC, Myers TH, Summers CJ. Interpretation of near-band-edge photoreflectance spectra from CdTe. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:13789-13792. [PMID: 9978188 DOI: 10.1103/physrevb.51.13789] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Behn U, Grahn HT, Ploog K, Schneider H. Line shape of electroreflectance spectra in semiconductor superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:11827-11832. [PMID: 10007521 DOI: 10.1103/physrevb.48.11827] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Parks C, Ramdas AK, Melloch MR, Ram-Mohan LR. Piezomodulated-reflectivity study of minibands in AlxGa1-xAs/GaAs superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:5413-5421. [PMID: 10009060 DOI: 10.1103/physrevb.48.5413] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Tanaka I, Nakayama M, Nishimura H, Kawashima K, Fujiwara K. Critical electric field for Stark-ladder formation in a GaAs/AlAs superlattice. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:2787-2790. [PMID: 10008682 DOI: 10.1103/physrevb.48.2787] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Dimoulas A, Leng J, Giapis KP, Georgakilas A, Michelakis C, Christou A. Interband transitions in InxGa1-xAs/In0.52Al0.48As single quantum wells studied by room-temperature modulation spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:7198-7207. [PMID: 10004717 DOI: 10.1103/physrevb.47.7198] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Rodrigues PA, Cerdeira F, Bean JC. Photoreflectance in Ge/Ge0.7Si0.3 strained-layer superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:15263-15269. [PMID: 10003641 DOI: 10.1103/physrevb.46.15263] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Deveaud B, Chomette A, Clérot F, Regreny A, Maan JC, Romestain R, Bastard G, Chu H, Chang YC. Miniband dispersion and excitonic effects on the optical spectra of GaAs/AlxGa1-xAs superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:5802-5805. [PMID: 9992625 DOI: 10.1103/physrevb.40.5802] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Shen H, Pan SH, Pollak FH, Sacks RN. Electromodulation mechanisms for the uncoupled and coupled states of a GaAs/Ga0.82Al. PHYSICAL REVIEW. B, CONDENSED MATTER 1988; 37:10919-10922. [PMID: 9944557 DOI: 10.1103/physrevb.37.10919] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
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