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Yu L, Sun S, Ye X. Electronic and magnetic properties of the Janus MoSSe/WSSe superlattice nanoribbon: a first-principles study. Phys Chem Chem Phys 2020; 22:2498-2508. [PMID: 31939967 DOI: 10.1039/c9cp05984a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The electronic structure properties of Janus MoSSe/WSSe superlattice nanoribbons (SLNRs) are investigated by first-principles calculations. The band structure, density of states and partial charge density are calculated. The results show that the ribbon width, combination ratio and period length have a great effect on the properties of SLNRs. Adjusting the distribution of outer S and Se atoms can restrict the spontaneous bending of the Janus nanoribbons while the properties are well preserved. The zigzag MoSSe/WSSe SLNRs (Z-SLNRs) show semiconductor and half-metal behavior depending on the ribbon width, which is quite different from the metallic properties of pristine MoSSe or WSSe nanoribbons. By modulating the ratio and period length of the two construction units, the bandgap and magnetic properties of Z-SLNRs can be tuned. The armchair MoSSe/WSSe SLNRs (A-SLNRs) are semiconductors, and the bandgap is similar to that of the corresponding armchair MoSSe or WSSe nanoribbons. As the width increases, the bandgaps of A-SLNRs show a variant behavior. It is found that A-SLNRs are all semiconductors regardless of the composition ratio, and the bandgaps also vary with the composition ratio of the constituent materials.
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Affiliation(s)
- Lingling Yu
- Department of Physics, Shanghai Normal University, Shanghai 200234, P. R. China.
| | - Shoutian Sun
- Department of Physics, Shanghai Normal University, Shanghai 200234, P. R. China.
| | - Xiang Ye
- Department of Physics, Shanghai Normal University, Shanghai 200234, P. R. China.
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Zhang F, Crespi VH, Zhang P. Prediction that uniaxial tension along <111> produces a direct band gap in germanium. PHYSICAL REVIEW LETTERS 2009; 102:156401. [PMID: 19518657 DOI: 10.1103/physrevlett.102.156401] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2008] [Indexed: 05/27/2023]
Abstract
We predict a new way to achieve a direct band gap in germanium, and hence optical emission in this technologically important group-IV element: tensile strain along the <111> direction in Ge nanowires. Although a symmetry-breaking band splitting lowers the conduction band at the corner of the Brillouin zone (at the L point), a direct gap of 0.34 eV in the center of the Brillouin zone (at Gamma) can still be achieved at 4.2% longitudinal strain, through an unexpectedly strong nonlinear drop in the conduction band edge at Gamma for strain along this axis. These strains are well within the experimentally demonstrated mechanical limits of single-crystal Ge (or Ge(x)Si(1-x)) nanowires, thereby opening a new material system for fundamental optical studies and applications.
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Affiliation(s)
- Feng Zhang
- Department of Physics and Materials Research Institute, The Pennsylvania State University, 104 Davey Lab, University Park, Pennsylvania, 16802-6300, USA
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Johnson KA, Ashcroft NW. Electronic structure of ordered silicon alloys: Direct-gap systems. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:14480-14486. [PMID: 9985452 DOI: 10.1103/physrevb.54.14480] [Citation(s) in RCA: 20] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Casalboni M, Pinto N, Izzi B, Davoli I, Prosposito P, Pizzoferrato R. Interface ordering in Sim/Gen monolayer superlattices: A photoluminescence study. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:1030-1033. [PMID: 9983547 DOI: 10.1103/physrevb.53.1030] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Chapter 4 X-ray absorption fine structure. ACTA ACUST UNITED AC 1996. [DOI: 10.1016/s0926-4345(96)80005-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register]
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Aulbur WG, Levine ZH, Wilkins JW, Allan DC. Small calculated second-harmonic generation in Si1Ge1. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:10691-10700. [PMID: 9977764 DOI: 10.1103/physrevb.51.10691] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Theodorou G, Kelires PC, Tserbak C. Structural, electronic, and optical properties of strained Si1-xGex alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:18355-18359. [PMID: 9976271 DOI: 10.1103/physrevb.50.18355] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Tserbak C, Theodorou G. Unified approach to the linear optical properties of strained (Si)n/(Ge)m superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:18179-18188. [PMID: 9976251 DOI: 10.1103/physrevb.50.18179] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Schorer R, Abstreiter G, Kibbel H, Presting H. Resonant-Raman-scattering study on short-period Si/Ge superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:18211-18218. [PMID: 9976255 DOI: 10.1103/physrevb.50.18211] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Adderley BM, Turton RJ, Jaros M. Absorption spectra of perfect and imperfect Si/Ge superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:16622-16631. [PMID: 10010821 DOI: 10.1103/physrevb.49.16622] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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Kelires PC. Interfacial stability and intermixing in thin-layer Sin/Gen superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:11496-11499. [PMID: 10010014 DOI: 10.1103/physrevb.49.11496] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Peressi M, Baroni S. Bulk and interfacial strain in Si/Ge heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:7490-7498. [PMID: 10009488 DOI: 10.1103/physrevb.49.7490] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Olajos J, Jia YB, Engvall J, Grimmeiss HG, Kasper E, Kibbel H, Presting H. Effect of hydrostatic pressure on the band-gap luminescence of strain-adjusted SimGen superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:2615-2621. [PMID: 10011094 DOI: 10.1103/physrevb.49.2615] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Rodrigues PA, Cerdeira F, Bean JC. Confinement and zone folding in the E1-like optical transitions of Ge/Si quantum wells and superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:18024-18030. [PMID: 10008440 DOI: 10.1103/physrevb.48.18024] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Rieger MM, Vogl P. Electronic-band parameters in strained Si1-xGex alloys on Si1-yGey substrates. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:14276-14287. [PMID: 10007844 DOI: 10.1103/physrevb.48.14276] [Citation(s) in RCA: 181] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Kelires PC, Tserbak C, Theodorou G. Structure, stability, and electronic properties of pseudomorphic (Si)n/(Ge)m superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:14238-14241. [PMID: 10007839 DOI: 10.1103/physrevb.48.14238] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Peressi M, Colombo L, Resta R, Baroni S, Baldereschi A. Structural and electronic properties of strained Si/GaAs heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:12047-12052. [PMID: 10007552 DOI: 10.1103/physrevb.48.12047] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ikeda M, Terakura K, Oguchi T. Theoretical study on the electronic structure of (Si)m/(Ge)n superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:1571-1582. [PMID: 10008517 DOI: 10.1103/physrevb.48.1571] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Matsuhata H, Miki K, Sakamoto K, Sakamoto T, Yoshida S. Microstructure in molecular-beam-epitaxy-grown Si/Ge short-period strained-layer superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:10474-10483. [PMID: 10005159 DOI: 10.1103/physrevb.47.10474] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Corkill JL, Cohen ML. Band gaps in some group-IV materials: A theoretical analysis. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:10304-10309. [PMID: 10005138 DOI: 10.1103/physrevb.47.10304] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Tserbak C, Polatoglou HM, Theodorou G. Unified approach to the electronic structure of strained Si/Ge superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:7104-7124. [PMID: 10004706 DOI: 10.1103/physrevb.47.7104] [Citation(s) in RCA: 60] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Olajos J, Engvall J, Grimmeiss HG, Menczigar U, Abstreiter G, Kibbel H, Kasper E, Presting H. Band gap of strain-symmetrized, short-period Si/Ge superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:12857-12860. [PMID: 10003227 DOI: 10.1103/physrevb.46.12857] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ikeda M, Terakura K, Oguchi T. Alternating change of allowed and forbidden optical transitions in (Si)2m/(Ge)10-2m superlattices with (001) stacking. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:1496-1499. [PMID: 10001641 DOI: 10.1103/physrevb.45.1496] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Dafesh PA, Wang KL. Temperature dependences of the E0 transitions in bulk Ge and a Ge-rich (Si)m/(Ge)n superlattice. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:1712-1718. [PMID: 10001672 DOI: 10.1103/physrevb.45.1712] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Olajos J, Vogl P, Wegscheider W, Abstreiter G. Infrared optical properties and band structure of alpha -Sn/Ge superlattices on Ge substrates. PHYSICAL REVIEW LETTERS 1991; 67:3164-3167. [PMID: 10044657 DOI: 10.1103/physrevlett.67.3164] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Colombo L, Resta R, Baroni S. Valence-band offsets at strained Si/Ge interfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:5572-5579. [PMID: 9998396 DOI: 10.1103/physrevb.44.5572] [Citation(s) in RCA: 54] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Tserbak C, Polatoglou HM, Theodorou G. Ge-like and Si-like features in the dielectric function of strained Si/Ge superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:3467-3470. [PMID: 9999970 DOI: 10.1103/physrevb.44.3467] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bernard JE, Zunger A. Strain energy and stability of Si-Ge compounds, alloys, and superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:1663-1681. [PMID: 9999700 DOI: 10.1103/physrevb.44.1663] [Citation(s) in RCA: 30] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Schmid U, Christensen NE, Alouani M, Cardona M. Electronic and optical properties of strained Ge/Si superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:14597-14614. [PMID: 9997352 DOI: 10.1103/physrevb.43.14597] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ghahramani E, Moss DJ, Sipe JE. Full-band-structure calculation of second-harmonic generation in odd-period strained (Si)n/(Ge)n superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:8990-9002. [PMID: 9996567 DOI: 10.1103/physrevb.43.8990] [Citation(s) in RCA: 50] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Dandrea RG, Zunger A. First-principles study of intervalley mixing: Ultrathin GaAs/GaP superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 43:8962-8989. [PMID: 9996566 DOI: 10.1103/physrevb.43.8962] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Qteish A, Molinari E. Interplanar forces and phonon spectra of strained Si and Ge: Ab initio calculations and applications to Si/Ge superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:7090-7096. [PMID: 9994835 DOI: 10.1103/physrevb.42.7090] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Chambers SA, Loebs VA. Elastic strain at pseudomorphic semiconductor heterojunctions studied by x-ray photoelectron diffraction: Ge/Si(001) and Si/Ge(001). PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:5109-5116. [PMID: 9996071 DOI: 10.1103/physrevb.42.5109] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Glaser E, Trombetta JM, Kennedy TA, Prokes SM, Glembocki OJ, Wang KL, Chern CH. Detection of magnetic resonance on photoluminescence from a Si/Si1-xGex strained-layer superlattice. PHYSICAL REVIEW LETTERS 1990; 65:1247-1250. [PMID: 10042212 DOI: 10.1103/physrevlett.65.1247] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Continenza A, Massidda S, Freeman AJ. Local-density theory of band offsets in strained superlattices: (InAs)n/(InP)n (001). PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:3469-3477. [PMID: 9995861 DOI: 10.1103/physrevb.42.3469] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Zi J, Zhang K, Xie X. Structural and vibrational properties of (Si)4/(Ge)4 superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:12862-12868. [PMID: 9993761 DOI: 10.1103/physrevb.41.12862] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ciraci S, Baratoff A, Batra IP. Zone-folded direct band gaps and energetics in strained (Si)4/(Ge)4 superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:6069-6071. [PMID: 9994494 DOI: 10.1103/physrevb.41.6069] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Gallup RF, Fong CY. Electronic properties of n-i-p-i structures in elemental Si/Ge strained-layer superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:5104-5111. [PMID: 9994368 DOI: 10.1103/physrevb.41.5104] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Magri R. Electronic band structure of the (GaAs)1/(InAs)1 (111) superlattice. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:6020-6031. [PMID: 9994486 DOI: 10.1103/physrevb.41.6020] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ghahramani E, Moss DJ, Sipe JE. Linear optical properties of strained (Si)n/(Ge)n superlattices on (001) Si substrates. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:5112-5125. [PMID: 9994369 DOI: 10.1103/physrevb.41.5112] [Citation(s) in RCA: 18] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Zachai R, Eberl K, Abstreiter G, Kasper E, Kibbel H. Photoluminescence in short-period Si/Ge strained-layer superlattices. PHYSICAL REVIEW LETTERS 1990; 64:1055-1058. [PMID: 10042151 DOI: 10.1103/physrevlett.64.1055] [Citation(s) in RCA: 33] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Koiller B, Robbins MO. Elastic energies and order in epitaxial Si-Ge alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:12554-12557. [PMID: 9991901 DOI: 10.1103/physrevb.40.12554] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ito T, Khor KE. Empirical potential-based Si-Ge interatomic potential and its application to superlattice stability. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:9715-9722. [PMID: 9991492 DOI: 10.1103/physrevb.40.9715] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Gershoni D, Vandenberg JM, Chu SN, Temkin H, Tanbun-Ek T, Logan RA. Excitonic transitions in strained-layer InxGa1-xAs/GaAs quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:10017-10020. [PMID: 9991542 DOI: 10.1103/physrevb.40.10017] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Müller E, Nissen H, Ospelt M. Chemical ordering and boundary structure in strained-layer Si-Ge superlattices. PHYSICAL REVIEW LETTERS 1989; 63:1819-1822. [PMID: 10040681 DOI: 10.1103/physrevlett.63.1819] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Tsang JC, Iyer SS, Calise JA, Ek BA. Localized electronic states and resonant Raman scattering from localized and quasiresonant phonons in Si-Ge layers. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:5886-5889. [PMID: 9992648 DOI: 10.1103/physrevb.40.5886] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Rajakarunanayake Y, McGill TC. Band structure and optical properties of Si-Si1-xGex superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:3051-3059. [PMID: 9992240 DOI: 10.1103/physrevb.40.3051] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Cerdeira F, Alonso MI, Niles D, Garriga M, Cardona M, Kasper E, Kibbel H. Resonant Raman scattering in short-period (Si)n/(Ge)m superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:1361-1364. [PMID: 9991976 DOI: 10.1103/physrevb.40.1361] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Ghahramani E, Sipe JE. Transfer-matrix method for the complex band structure of superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 40:1102-1109. [PMID: 9991933 DOI: 10.1103/physrevb.40.1102] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Friedel P, Hybertsen MS, Schlüter M. Local empirical pseudopotential approach to the optical properties of Si/Ge superlattices. PHYSICAL REVIEW. B, CONDENSED MATTER 1989; 39:7974-7977. [PMID: 9947483 DOI: 10.1103/physrevb.39.7974] [Citation(s) in RCA: 28] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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