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For: Ko DY, Inkson JC. Microscopic calculation of electric field effects in GaAs/AlxGa1-xAs/GaAs tunnel structures. Phys Rev B Condens Matter 1988;38:12416-12420. [PMID: 9946182 DOI: 10.1103/physrevb.38.12416] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/11/2023]
Number Cited by Other Article(s)
1
Tan W, Inkson JC, Srivastava GP. Microscopic calculation of valence-band states in semiconductor structures in the presence of a magnetic field. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:14623-14632. [PMID: 9985470 DOI: 10.1103/physrevb.54.14623] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
2
Osotchan T, Chin VW, Tansley TL. Transport mechanism of Gamma - and X-band electrons in AlxGa1-xAs/AlAs/GaAs double-barrier quantum-well infrared photodetectors. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;54:2059-2066. [PMID: 9986058 DOI: 10.1103/physrevb.54.2059] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
3
Ando T, Akera H. Connection of envelope functions at semiconductor heterointerfaces. II. Mixings of Gamma and X valleys in GaAs/AlxGa1-xAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;40:11619-11633. [PMID: 9991762 DOI: 10.1103/physrevb.40.11619] [Citation(s) in RCA: 59] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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