d'Acapito F, Torrengo S, Xenogiannopoulou E, Tsipas P, Marquez Velasco J, Tsoutsou D, Dimoulas A. Evidence for Germanene growth on epitaxial hexagonal (h)-AlN on Ag(1 1 1).
JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2016;
28:045002. [PMID:
26751008 DOI:
10.1088/0953-8984/28/4/045002]
[Citation(s) in RCA: 8] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
In this work, a structural analysis of Ge layers deposited by molecular beam epitaxy (MBE) on Ag(1 1 1) surfaces with and without an AlN buffer layer have been investigated by x-ray Absorption Spectroscopy (XAS) at the Ge-K edge. For the Ge layers deposited on h-AlN buffer layer on Ag(1 1 1) an interatomic Ge-Ge distance [Formula: see text] Å is found, typical of 2-Dimensional Ge layers and in agreement with the theoretical predictions for free standing low-buckled Germanene presented in literature. First principles calculations, performed in the density functional theory (DFT) framework, supported the experimental RHEED and XAS findings, providing evidence for the epitaxial 2-D Ge layer formation on h-AlN/Ag(1 1 1) template.
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