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For: Skolnick MS, Halliday DP, Tu CW. Zeeman spectroscopy of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy. Phys Rev B Condens Matter 1988;38:4165-4179. [PMID: 9946791 DOI: 10.1103/physrevb.38.4165] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Plochocka P, Mitioglu AA, Maude DK, Rikken GLJA, del Águila AG, Christianen PCM, Kacman P, Shtrikman H. High magnetic field reveals the nature of excitons in a single GaAs/AlAs core/shell nanowire. NANO LETTERS 2013;13:2442-2447. [PMID: 23634970 DOI: 10.1021/nl400417x] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
2
Cheng Y, Stavola M, Abernathy CR, Pearton SJ, Hobson WS. Aligned defect complex containing carbon and hydrogen in as-grown GaAs epitaxial layers. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:2469-2476. [PMID: 10011080 DOI: 10.1103/physrevb.49.2469] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
3
Villemaire A, Steiner T, Thewalt ML. Zeeman spectroscopy of an axial-double-acceptor bound exciton in GaAs grown by molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;44:13426-13434. [PMID: 9999545 DOI: 10.1103/physrevb.44.13426] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Charbonneau S, Thewalt ML. Optical properties of shallow defect-related acceptors in GaAs grown by molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:8221-8228. [PMID: 9993145 DOI: 10.1103/physrevb.41.8221] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
5
Charbonneau S, Steiner T, Thewalt ML. Photoluminescence decay times of the defect-induced bound-exciton lines in GaAs grown by molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:2861-2864. [PMID: 9994052 DOI: 10.1103/physrevb.41.2861] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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