Two ways to perform spin-polarized relativistic linear muffin-tin-orbital calculations

Time-Reversal-Even Nonlinear Current Induced Spin Polarization

We propose a time-reversal-even spin generation in second order of electric fields, which dominates the current induced spin polarization in a wide class of centrosymmetric nonmagnetic materials, and leads to a novel nonlinear spin-orbit torque in magnets. We reveal a quantum origin of this effect from the momentum space dipole of the anomalous spin polarizability. First-principles calculations predict sizable spin generations in several nonmagnetic hcp metals, in monolayer TiTe_{2}, and in ferromagnetic monolayer MnSe_{2}, which can be detected in experiment. Our work opens up the broad vista of nonlinear spintronics in both nonmagnetic and magnetic systems.

Intrinsic spin Hall effect in platinum: first-principles calculations

Spin Hall effect (SHE) is studied with first-principles relativistic band calculations for platinum, which is one of the most important materials for metallic SHE and spintronics. We find that intrinsic spin Hall conductivity (SHC) is as large as approximately 2000(variant Planck's over 2 pi/e)(Omega cm)(-1) at low temperature and decreases down to approximately 200(variant Planck's over 2 pi/e)(Omega cm)(-1) at room temperature. It is due to the resonant contribution from the spin-orbit splitting of the doubly degenerated d bands at high-symmetry L and X points near the Fermi level. By modeling these near degeneracies by an effective Hamiltonian, we show that SHC has a peak near the Fermi energy and that the vertex correction due to impurity scattering vanishes. We therefore argue that the large SHE observed experimentally in platinum is of intrinsic nature.

Ab initio calculation of the intrinsic spin Hall effect in semiconductors

Relativistic band theoretical calculations reveal that intrinsic spin Hall conductivity in hole-doped archetypical semiconductors Ge, GaAs, and AlAs is large [approximately 100(planck/e)(Omega cm)(-1)], showing the possibility of a spin Hall effect beyond the four-band Luttinger Hamiltonian. The calculated orbital-angular-momentum (orbital) Hall conductivity is one order of magnitude smaller, indicating no cancellation between the spin and orbital Hall effects in bulk semiconductors. Furthermore, it is found that the spin Hall effect can be strongly manipulated by strains, and that the ac spin Hall conductivity is large in pure as well as doped semiconductors.

The Fermi surface of [Formula: see text]

The heavy-fermion compound [Formula: see text] has been studied using the fully relativistic spin-polarized mean muffin-tin orbital method within the local density approximation. Two separate calculations, one where the f electron is treated as a valence electron and the other where it is treated as part of the core, have been performed and the Fermi surface is obtained. The angular-dependent de Haas - van Alphen (dHvA) frequencies are calculated in both cases and they are compared with the experimental dHvA frequencies. We also calculated the electron momentum densities and compared them with the electron - positron momentum densities measured from the two-dimensional angular correlation of electron - positron annihilation radiation. The spin polarization of the Fermi surface is analysed and we present a new interpretation of the experimental data of Harrison et al.