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Citation(s) in
RCA
11
(from Reference Citation Analysis)
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PHYSICAL REVIEW. B, CONDENSED MATTER (9)
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For:
Zegenhagen J
, Huang K, Gibson WM, Hunt BD, Schowalter LJ.
Structural properties of epitaxial NiSi2 on Si(111) investigated with x-ray standing waves.
Phys Rev B Condens Matter
1989;
39
:10254-10260. [PMID:
9947807
DOI:
10.1103/physrevb.39.10254
]
[
Citation(s) in
RCA
: 36
]
[
Impact Index Per Article: 1.0
]
[
Reference Citation Analysis
]
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[Indexed: 04/12/2023]
Number
Cited by Other Article(s)
1
Fujitani H
, Asano S. Full-potential total-energy investigation on the lattice relaxation at the two types of NiSi2/Si(111) interface.
PHYSICAL REVIEW. B, CONDENSED MATTER
1995;
51
:18019-18021. [PMID:
9978845
DOI:
10.1103/physrevb.51.18019
]
[
Citation(s) in
RCA
: 0
]
[
Impact Index Per Article: 0
]
[
Reference Citation Analysis
]
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[Indexed: 04/12/2023]
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2
Fujitani H
, Asano S. Schottky-barrier height and electronic structure of the Si interface with metal silicides: CoSi2, NiSi2, and YSi2.
PHYSICAL REVIEW. B, CONDENSED MATTER
1994;
50
:8681-8698. [PMID:
9974888
DOI:
10.1103/physrevb.50.8681
]
[
Citation(s) in
RCA
: 5
]
[
Impact Index Per Article: 0.2
]
[
Reference Citation Analysis
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[Indexed: 04/12/2023]
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3
Li G
, Rabii S. Ab initio structural study of the silicon/nickel disilicide interfaces.
PHYSICAL REVIEW. B, CONDENSED MATTER
1994;
49
:2927-2930. [PMID:
10011133
DOI:
10.1103/physrevb.49.2927
]
[
Citation(s) in
RCA
: 2
]
[
Impact Index Per Article: 0.1
]
[
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[Indexed: 04/12/2023]
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4
Growth and characterization of epitaxial Ni and Co silicides.
ACTA ACUST UNITED AC
1992. [DOI:
10.1016/0920-2307(92)90003-j
]
[
Citation(s) in
RCA
: 228
]
[
Impact Index Per Article: 7.1
]
[
Reference Citation Analysis
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[Indexed: 11/21/2022]
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5
Vrijmoeth J
, Zaima S, Vlieg E, Frenken JW. CoSi2/Si(111) interface: Determination of the interfacial metal coordination number.
PHYSICAL REVIEW. B, CONDENSED MATTER
1992;
45
:6700-6708. [PMID:
10000431
DOI:
10.1103/physrevb.45.6700
]
[
Citation(s) in
RCA
: 9
]
[
Impact Index Per Article: 0.3
]
[
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[Indexed: 04/12/2023]
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6
Zegenhagen J
, Patel JR, Freeland PE, Tung RT. Co on Si(111): Silicide formation.
PHYSICAL REVIEW. B, CONDENSED MATTER
1991;
44
:13626-13630. [PMID:
9999565
DOI:
10.1103/physrevb.44.13626
]
[
Citation(s) in
RCA
: 3
]
[
Impact Index Per Article: 0.1
]
[
Reference Citation Analysis
]
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[Indexed: 04/12/2023]
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7
Vrijmoeth J
, Heslinga DR, Klapwijk TM. Medium-energy ion-scattering study of a possible relation between the Schottky-barrier height and the defect density at NiSi2/Si(111) interfaces.
PHYSICAL REVIEW. B, CONDENSED MATTER
1990;
42
:9598-9608. [PMID:
9995201
DOI:
10.1103/physrevb.42.9598
]
[
Citation(s) in
RCA
: 13
]
[
Impact Index Per Article: 0.4
]
[
Reference Citation Analysis
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[Indexed: 04/12/2023]
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8
Christensen NE
. Electronic structure of beta -FeSi2.
PHYSICAL REVIEW. B, CONDENSED MATTER
1990;
42
:7148-7153. [PMID:
9994841
DOI:
10.1103/physrevb.42.7148
]
[
Citation(s) in
RCA
: 156
]
[
Impact Index Per Article: 4.6
]
[
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[Indexed: 04/12/2023]
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9
Ossicini S
, Bisi O, Bertoni CM. Electronic structure of Si(111)-NiSi2(111) A-type and B-type interfaces.
PHYSICAL REVIEW. B, CONDENSED MATTER
1990;
42
:5735-5743. [PMID:
9996159
DOI:
10.1103/physrevb.42.5735
]
[
Citation(s) in
RCA
: 14
]
[
Impact Index Per Article: 0.4
]
[
Reference Citation Analysis
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[Indexed: 04/12/2023]
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10
Das GP
, Blöchl P, Andersen OK, Christensen NE, Gunnarsson O. Electronic structure and Schottky-barrier heights of (111) NiSi2/Si A- and B-type interfaces.
PHYSICAL REVIEW LETTERS
1989;
63
:1168-1171. [PMID:
10040487
DOI:
10.1103/physrevlett.63.1168
]
[
Citation(s) in
RCA
: 35
]
[
Impact Index Per Article: 1.0
]
[
Reference Citation Analysis
]
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[Indexed: 05/23/2023]
Abstract
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11
Huang K
, Gibson WM, Zegenhagen J. X-ray standing-wave analysis with high reflection order and near-normal incidence.
PHYSICAL REVIEW. B, CONDENSED MATTER
1989;
40
:4216-4219. [PMID:
9992406
DOI:
10.1103/physrevb.40.4216
]
[
Citation(s) in
RCA
: 25
]
[
Impact Index Per Article: 0.7
]
[
Reference Citation Analysis
]
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[Indexed: 04/12/2023]
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