Hot-phonon effects and interband relaxation processes in photoexcited GaAs quantum wells

Hot Carrier Cooling and Trapping in Atomically Thin WS2 Probed by Three-Pulse Femtosecond Spectroscopy

Transition metal dichalcogenides (TMDs) have shown outstanding semiconducting properties which make them promising materials for next-generation optoelectronic and electronic devices. These properties are imparted by fundamental carrier-carrier and carrier-phonon interactions that are foundational to hot carrier cooling. Recent transient absorption studies have reported ultrafast time scales for carrier cooling in TMDs that can be slowed at high excitation densities via a hot-phonon bottleneck (HPB) and discussed these findings in the light of optoelectronic applications. However, quantitative descriptions of the HPB in TMDs, including details of the electron-lattice coupling and how cooling is affected by the redistribution of energy between carriers, are still lacking. Here, we use femtosecond pump-push-probe spectroscopy as a single approach to systematically characterize the scattering of hot carriers with optical phonons, cold carriers, and defects in a benchmark TMD monolayer of polycrystalline WS₂. By controlling the interband pump and intraband push excitations, we observe, in real-time (i) an extremely rapid "intrinsic" cooling rate of ∼18 ± 2.7 eV/ps, which can be slowed with increasing hot carrier density, (ii) the deprecation of this HPB at elevated cold carrier densities, exposing a previously undisclosed role of the carrier-carrier interactions in mediating cooling, and (iii) the interception of high energy hot carriers on the subpicosecond time scale by lattice defects, which may account for the lower photoluminescence yield of TMDs when excited above band gap.

A spectroscopic overview of the differences between the absorbing states and the emitting states in semiconductor perovskite nanocrystals

Semiconductor perovskites have been under intense investigation for their promise in optoelectronic applications and their novel and unique physical properties. There have been a variety of material implementations of perovskites from thin films to single crystals to nanocrystals. The nanocrystal form, in particular, is attractive as it enables solution processing and also spectroscopically probes both absorptive and emissive transitions. Broadly, the literature is comprised of experiments of either form, but the experiments are rarely performed in concert and are not discussed in a unified picture. For example, absorptive experiments are typically transient absorption measurements, which aim to measure carrier kinetics and dynamics. In contrast, the emissive experiments largely focus on excitonic fine structures and coupling to phonons. The time resolved emission experiments report on excited state lifetimes and their dependence on temperature. There are broad differences in the spectroscopy techniques and the questions asked in both classes of experiments. Yet there is one measure in common that suggests there are mysteries in our understanding of how the absorbing and emitting states are connected. The linewidth of emission spectra is always larger than the linewidth of absorption spectra. The question of the physics underlying linewidths is complex and is one of the central issues in perovskite nanocrystals. So why are the absorptive and emissive linewidths different? At present even this simple question has no clear answer. The more complex questions of the structure and dynamics of absorptive and emissive states are even more ambiguous. Hence there is a need to connect these experiments and the relevant states. Here, we provide an overview of the salient absorptive and emissive spectroscopy techniques in an effort to begin connecting these two disparate areas of inquiry.

Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films

As a promising high mobility p-type wide bandgap semiconductor, copper iodide has received increasing attention in recent years. However, the defect physics/evolution are still controversial, and particularly the ultrafast carrier and exciton dynamics in copper iodide has rarely been investigated. Here, we study these fundamental properties for copper iodide thin films by a synergistic approach employing a combination of analytical techniques. Steady-state photoluminescence spectra reveal that the emission at ~420 nm arises from the recombination of electrons with neutral copper vacancies. The photogenerated carrier density dependent ultrafast physical processes are elucidated with using the femtosecond transient absorption spectroscopy. Both the effects of hot-phonon bottleneck and the Auger heating significantly slow down the cooling rate of hot-carriers in the case of high excitation density. The effect of defects on the carrier recombination and the two-photon induced ultrafast carrier dynamics are also investigated. These findings are crucial to the optoelectronic applications of copper iodide.

Size-Dependent Hot Carrier Dynamics in Perovskite Nanocrystals Revealed by Two-Dimensional Electronic Spectroscopy

The lifetimes of hot carriers have been predicted to be prolonged in small nanocrystals with an inter-level spacing larger than phonon energy. Nevertheless, whether such a phonon bottleneck is present in perovskite semiconductor nanocrystals remains highly controversial. Here we report compelling evidence of a phonon bottleneck in CsPbI₃ nanocrystals with marked size-dependent relaxation of hot carriers by using broadband two-dimensional electronic spectroscopy (2DES). By combining high resolutions in both the time (<10 fs) and excitation energy domains, 2DES allows the clear disentanglement of the thermalization and cooling processes. The lifetime is over doubled for hot carriers when the average edge length of the nanocrystals decreases from 8.2 nm down to 4.6 nm. The confirmation of the phonon bottleneck effect suggests the feasibility of controlling hot carrier dynamics in perovskite semiconductors with nanocrystal size for potential applications of hot carrier devices.

Acoustic-optical phonon up-conversion and hot-phonon bottleneck in lead-halide perovskites

The hot-phonon bottleneck effect in lead-halide perovskites (APbX₃) prolongs the cooling period of hot charge carriers, an effect that could be used in the next-generation photovoltaics devices. Using ultrafast optical characterization and first-principle calculations, four kinds of lead-halide perovskites (A=FA⁺/MA⁺/Cs⁺, X=I⁻/Br⁻) are compared in this study to reveal the carrier-phonon dynamics within. Here we show a stronger phonon bottleneck effect in hybrid perovskites than in their inorganic counterparts. Compared with the caesium-based system, a 10 times slower carrier-phonon relaxation rate is observed in FAPbI₃. The up-conversion of low-energy phonons is proposed to be responsible for the bottleneck effect. The presence of organic cations introduces overlapping phonon branches and facilitates the up-transition of low-energy modes. The blocking of phonon propagation associated with an ultralow thermal conductivity of the material also increases the overall up-conversion efficiency. This result also suggests a new and general method for achieving long-lived hot carriers in materials.

Slow cooling of hot charge carriers in lead halide perovskite could be used in photovoltaics devices. Here, Yang et al. study hot carrier dynamics by transient absorption spectroscopy. They relate the phonon bottleneck to the up-conversion of low-energy phonons, facilitated by the presence of organic cations.

Spectroscopy and hot electron relaxation dynamics in semiconductor quantum wells and quantum dots

Photoexcitation of a semiconductor with photons above the semiconductor band gap creates electrons and holes that are out of equilibrium. The rates at which the photogenerated charge carriers return to equilibrium via thermalization through carrier scattering, cooling by phonon emission, and radiative and nonradiative recombination are important issues. The relaxation processes can be greatly affected by quantization effects that arise when the carriers are confined to regions of space that are small compared with their deBroglie wavelength or the Bohr radius of bulk excitons. The effects of size quantization in semiconductor quantum wells (carrier confinement in one dimension) and quantum dots (carrier confinement in three dimensions) on the respective carrier relaxation processes are reviewed, with emphasis on electron cooling dynamics. The implications of these effects for applications involving radiant energy conversion are also discussed.