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For: McLean AB, Ludeke R. Surface core-level binding-energy shifts for the cleaved GaP(110) surface. Phys Rev B Condens Matter 1989;39:6223-6226. [PMID: 9949053 DOI: 10.1103/physrevb.39.6223] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Sieger MT, Miller T, Chiang T. Reflection high-energy electron diffraction and photoemission study of GaSb(100) reconstructions. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;52:8256-8265. [PMID: 9979825 DOI: 10.1103/physrevb.52.8256] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
2
Faul J, Neuhold G, Ley L, Fraxedas J, Zollner S, Riley JD, Leckey RC. Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:14301-14308. [PMID: 10007847 DOI: 10.1103/physrevb.48.14301] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
3
Evans DA, Lapeyre GJ, Horn K. Photoemission observation of Na-induced states in the band gap and evidence for charge transfer in Na/GaP(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:1939-1942. [PMID: 10008567 DOI: 10.1103/physrevb.48.1939] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Chiaradia P, Bonnet JE, Fanfoni M, Goletti C, Lampel G. Schottky barrier and surface photovoltage induced by synchrotron radiation in GaP(110)/Ag. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;47:13520-13526. [PMID: 10005662 DOI: 10.1103/physrevb.47.13520] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
5
Sancrotti M, Duò L, Calliari L, Manghi F, Cosso R, Weightman P. Anion-specific surface valence-band states in heteropolar semiconductors: The case of GaP(110) and InP(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1992;46:13607-13610. [PMID: 10003412 DOI: 10.1103/physrevb.46.13607] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
6
Horn K. Semiconductor interface studies using core and valence level photoemission. ACTA ACUST UNITED AC 1990. [DOI: 10.1007/bf00324309] [Citation(s) in RCA: 51] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/26/2022]
7
Ludeke R, McLean AB, Taleb-Ibrahimi A. Electronic properties of nascent GaP(110)-noble-metal interfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;42:2982-2995. [PMID: 9995790 DOI: 10.1103/physrevb.42.2982] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
8
Duò L, Sancrotti M, Cosso R, D'Addato S, Ruocco A, Nannarone S, Norman D, Weightman P. Strong chemical reactivity at the early stages of Yb overgrowth on GaP(110): A synchrotron-radiation study. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;42:3478-3484. [PMID: 9995862 DOI: 10.1103/physrevb.42.3478] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
9
Andersen JN, Karlsson UO. Surface core-level shifts of InAs(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:3844-3846. [PMID: 9994191 DOI: 10.1103/physrevb.41.3844] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
10
Wilke WG, Hinkel V, Theis W, Horn K. Surface core-level shifts on InP(110): Experiments and Madelung energy calculations. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;40:9824-9828. [PMID: 9991505 DOI: 10.1103/physrevb.40.9824] [Citation(s) in RCA: 26] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
11
Trafas BM, Xu F, Vos M, Aldao CM, Weaver JH. Metal/GaP(110) interface formation: Ti, Pd, Ag, and Au adatom deposition. PHYSICAL REVIEW. B, CONDENSED MATTER 1989;40:4022-4029. [PMID: 9992376 DOI: 10.1103/physrevb.40.4022] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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