Negative differential conductance in GaAs/AlAs superlattices

Dissipative Parametric Gain in a GaAs/AlGaAs Superlattice

Parametric generation of oscillations and waves is a paradigm, which is known to be realized in various physical systems. Unique properties of quantum semiconductor superlattices allow us to investigate high-frequency phenomena induced by the Bragg reflections and negative differential velocity of the miniband electrons. Effects of parametric gain in the superlattices at different strengths of dissipation have been earlier discussed in a number of theoretical works, but their experimental demonstrations are so far absent. Here, we report on the first observation of the dissipative parametric generation in a subcritically doped GaAs/AlGaAs superlattice subjected to a dc bias and a microwave pump. We argue that the dissipative parametric mechanism originates from a periodic variation of the negative differential velocity. It enforces excitation of slow electrostatic waves in the superlattice that provide a significant enhancement of the gain coefficient. This work paves the way for a development of a miniature solid-state parametric generator of GHz-THz frequencies operating at room temperature.

Anomalous mobility of Brownian particles in a tilted symmetric sawtooth potential

Overdamped motion of Brownian particles in a 1D periodic system with a simple symmetric sawtooth potential subjected to both unbiased thermal noise and spatially nonhomogeneous three-level colored noise is considered analytically. Upon application of a tilting force the particles exhibit anomalous transport properties, namely, absolute negative mobility, negative differential mobility, and the phenomenon of hypersensitive differential response. It is established that the mobility (differential mobility included) depends nonmonotonically on the parameters (switching rate, amplitude, and temperature) of nonequilibrium and thermal noises. The necessary conditions for various anomalous transport properties are found.

Motion of wave fronts in semiconductor superlattices

An analysis of wave front motion in weakly coupled doped semiconductor superlattices is presented. If a dimensionless doping is sufficiently large, the superlattice behaves as a discrete system presenting front propagation failure and the wave fronts can be described near the threshold currents J(i) (i=1,2) at which they depin and move. The wave front velocity scales with current as |J-J(i)|(1/2). If the dimensionless doping is low enough, the superlattice behaves as a continuum system and wave fronts are essentially shock waves whose velocity obeys an equal area rule.

Wave fronts may move upstream in semiconductor superlattices

In weakly coupled, current biased, doped semiconductor superlattices, domain walls may move upstream against the flow of electrons. For appropriate doping values, a domain wall separating two electric-field domains moves downstream below a first critical current, it remains stationary between this value and a second critical current, and then moves upstream above. These conclusions are reached by using a comparison principle to analyze a discrete drift-diffusion model, and validated by numerical simulations. Possible experimental realizations are suggested.