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Li R, Yue Z, Luan H, Dong Y, Chen X, Gu M. Multimodal Artificial Synapses for Neuromorphic Application. RESEARCH (WASHINGTON, D.C.) 2024; 7:0427. [PMID: 39161534 PMCID: PMC11331013 DOI: 10.34133/research.0427] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 04/06/2024] [Accepted: 06/24/2024] [Indexed: 08/21/2024]
Abstract
The rapid development of neuromorphic computing has led to widespread investigation of artificial synapses. These synapses can perform parallel in-memory computing functions while transmitting signals, enabling low-energy and fast artificial intelligence. Robots are the most ideal endpoint for the application of artificial intelligence. In the human nervous system, there are different types of synapses for sensory input, allowing for signal preprocessing at the receiving end. Therefore, the development of anthropomorphic intelligent robots requires not only an artificial intelligence system as the brain but also the combination of multimodal artificial synapses for multisensory sensing, including visual, tactile, olfactory, auditory, and taste. This article reviews the working mechanisms of artificial synapses with different stimulation and response modalities, and presents their use in various neuromorphic tasks. We aim to provide researchers in this frontier field with a comprehensive understanding of multimodal artificial synapses.
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Affiliation(s)
- Runze Li
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
- Institute of Photonic Chips,
University of Shanghai for Science and Technology, Shanghai 200093, China
- Zhangjiang Laboratory, Pudong, Shanghai 201210, China
| | - Zengji Yue
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Haitao Luan
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Yibo Dong
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Xi Chen
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
| | - Min Gu
- School of Artificial Intelligence Science and Technology,
University of Shanghai for Science and Technology, Shanghai 200093, China
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Yan H, Zhang Z, Wang S, Zhang H, Chen C, Jin K. Modulated Transport Behavior of Two-Dimensional Electron Gas at Ni-Doped LaAlO 3/SrTiO 3 Heterointerfaces. ACS APPLIED MATERIALS & INTERFACES 2017; 9:39011-39017. [PMID: 29034682 DOI: 10.1021/acsami.7b11727] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Modulating transport behaviors of two-dimensional electron gases are of critical importance for applications of the next-generation multifunctional oxide electronics. In this study, transport behaviors of LaAlO3/SrTiO3 heterointerfaces modified through the Ni dopant and the light irradiation have been investigated. Through the Ni dopant, the resistances increase significantly and a resistance upturn phenomenon due to the Kondo effect is observed at T < 40 K. Under a 360 nm light irradiation, the interfaces exhibit a persistent photoconductivity and a suppressed Kondo effect at low temperature due to the increased mobility measured through the photo-Hall method. Moreover, the relative changes in resistance of interfaces induced by light are increased from 800 to 6600% at T = 12 K with increasing the substitution of Ni, which is discussed by the band bending and the lattice effect due to the Ni dopant. This work paves the way for better controlling the emerging properties of complex oxide heterointerfaces and would be helpful for photoelectric device applications based on all-oxides.
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Affiliation(s)
- Hong Yan
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University , Xi'an 710072, China
| | - Zhaoting Zhang
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University , Xi'an 710072, China
| | - Shuanhu Wang
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University , Xi'an 710072, China
| | - Hongrui Zhang
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University , Xi'an 710072, China
| | - Changle Chen
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University , Xi'an 710072, China
| | - Kexin Jin
- Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University , Xi'an 710072, China
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Wu YC, Liu CH, Chen SY, Shih FY, Ho PH, Chen CW, Liang CT, Wang WH. Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS2 Field Effect Transistors. Sci Rep 2015; 5:11472. [PMID: 26112341 PMCID: PMC4650635 DOI: 10.1038/srep11472] [Citation(s) in RCA: 46] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/25/2014] [Accepted: 05/18/2015] [Indexed: 12/03/2022] Open
Abstract
Recent discoveries of the photoresponse of molybdenum disulfide (MoS2) have shown the considerable potential of these two-dimensional transition metal dichalcogenides for optoelectronic applications. Among the various types of photoresponses of MoS2, persistent photoconductivity (PPC) at different levels has been reported. However, a detailed study of the PPC effect and its mechanism in MoS2 is still not available, despite the importance of this effect on the photoresponse of the material. Here, we present a systematic study of the PPC effect in monolayer MoS2 and conclude that the effect can be attributed to random localized potential fluctuations in the devices. Notably, the potential fluctuations originate from extrinsic sources based on the substrate effect of the PPC. Moreover, we point out a correlation between the PPC effect in MoS2 and the percolation transport behavior of MoS2. We demonstrate a unique and efficient means of controlling the PPC effect in monolayer MoS2, which may offer novel functionalities for MoS2-based optoelectronic applications in the future.
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Affiliation(s)
- Yueh-Chun Wu
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Cheng-Hua Liu
- 1] Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan [2] Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Shao-Yu Chen
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
| | - Fu-Yu Shih
- 1] Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan [2] Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Po-Hsun Ho
- Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan
| | - Chun-Wei Chen
- Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan
| | - Chi-Te Liang
- Department of Physics, National Taiwan University, Taipei 106, Taiwan
| | - Wei-Hua Wang
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
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Firszt F, Męczyńska H, Łęgowski S, Zakrzewski J, Strzałkowski K, Wróbel M. Persistent photoconductivity and optically stimulated luminescence in Zn0.8
Mg0.2
Se mixed crystals. ACTA ACUST UNITED AC 2004. [DOI: 10.1002/pssc.200304135] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
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Dissanayake AS, Lin JY, Jiang HX. Persistent photoconductivity in Zn0.04Cd0.96Te semiconductor thin films. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:8145-8151. [PMID: 10007004 DOI: 10.1103/physrevb.48.8145] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Semaltianos NG, Karczewski G, Wojtowicz T, Furdyna JK. Persistent photoconductivity and photoionization of deep electron traps in Ga-doped Cd1-xMnxTe. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:12540-12549. [PMID: 10005446 DOI: 10.1103/physrevb.47.12540] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Dissanayake A, Elahi M, Jiang HX, Lin JY. Kinetics of persistent photoconductivity in Al0.3Ga0.7As and Zn0.3Cd0.7Se semiconductor alloys. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:13996-14004. [PMID: 10001516 DOI: 10.1103/physrevb.45.13996] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Jiang HX, Dissanayake A, Lin JY. Band-tail states in a Zn0.3Cd0.7Se semiconductor alloy probed by persistent photoconductivity. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:4520-4523. [PMID: 10002077 DOI: 10.1103/physrevb.45.4520] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Zu LQ, Lin JY, Jiang HX. Dynamics of exciton localization in a CdSe0.5S0.5 mixed crystal. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:7284-7287. [PMID: 9994867 DOI: 10.1103/physrevb.42.7284] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Lin JY, Dissanayake A, Brown G, Jiang HX. Relaxation of persistent photoconductivity in Al0.3Ga0.7As. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 42:5855-5858. [PMID: 9996171 DOI: 10.1103/physrevb.42.5855] [Citation(s) in RCA: 28] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Jiang HX, Lin JY. Percolation transition of persistent photoconductivity in II-VI mixed crystals. PHYSICAL REVIEW LETTERS 1990; 64:2547-2550. [PMID: 10041740 DOI: 10.1103/physrevlett.64.2547] [Citation(s) in RCA: 22] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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12
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Lin JY, Jiang HX. Relaxation of stored charge carriers in a Zn0.3Cd0.7Se mixed crystal. PHYSICAL REVIEW. B, CONDENSED MATTER 1990; 41:5178-5187. [PMID: 9994377 DOI: 10.1103/physrevb.41.5178] [Citation(s) in RCA: 12] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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