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For: Okada Y. Concentration of native point defects in Si single crystals at high temperatures. Phys Rev B Condens Matter 1990;41:10741-10743. [PMID: 9993483 DOI: 10.1103/physrevb.41.10741] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Intrinsic Point Defects. COMPUTATIONAL MICROELECTRONICS 2004. [DOI: 10.1007/978-3-7091-0597-9_2] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/19/2023]
2
Bracht H, Stolwijk NA, Mehrer H. Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;52:16542-16560. [PMID: 9981053 DOI: 10.1103/physrevb.52.16542] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
3
Mathiot D. Gold, self-, and dopant diffusion in silicon. PHYSICAL REVIEW. B, CONDENSED MATTER 1992;45:13345-13355. [PMID: 10001417 DOI: 10.1103/physrevb.45.13345] [Citation(s) in RCA: 19] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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