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Citation(s) in
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PHYSICAL REVIEW. B, CONDENSED MATTER (2)
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Okada Y
.
Concentration of native point defects in Si single crystals at high temperatures.
Phys Rev B Condens Matter
1990;
41
:10741-10743. [PMID:
9993483
DOI:
10.1103/physrevb.41.10741
]
[
Citation(s) in
RCA
: 8
]
[
Impact Index Per Article: 0.2
]
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[Indexed: 04/12/2023]
Number
Cited by Other Article(s)
1
Intrinsic Point Defects.
COMPUTATIONAL MICROELECTRONICS
2004. [DOI:
10.1007/978-3-7091-0597-9_2
]
[
Citation(s) in
RCA
: 11
]
[
Impact Index Per Article: 0.6
]
[
Reference Citation Analysis
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[Indexed: 01/19/2023]
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2
Bracht H
, Stolwijk NA, Mehrer H. Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions.
PHYSICAL REVIEW. B, CONDENSED MATTER
1995;
52
:16542-16560. [PMID:
9981053
DOI:
10.1103/physrevb.52.16542
]
[
Citation(s) in
RCA
: 13
]
[
Impact Index Per Article: 0.4
]
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[Indexed: 05/22/2023]
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3
Mathiot D
. Gold, self-, and dopant diffusion in silicon.
PHYSICAL REVIEW. B, CONDENSED MATTER
1992;
45
:13345-13355. [PMID:
10001417
DOI:
10.1103/physrevb.45.13345
]
[
Citation(s) in
RCA
: 19
]
[
Impact Index Per Article: 0.6
]
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[Indexed: 04/12/2023]
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