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For: Waddill GD, Aldao CM, Capasso C, Benning PJ, Hu Y, Wagener TJ, Jost MB, Weaver JH. Thermally reversible band bending for Bi/GaAs(110): Photoemission and inverse-photoemission investigations. Phys Rev B Condens Matter 1990;41:5960-5968. [PMID: 9994480 DOI: 10.1103/physrevb.41.5960] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Umerski A, Srivastava GP. Geometry and electronic band structure of an ordered monolayer deposition of Bi on III-V(110) semiconductor surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:2334-2346. [PMID: 9978986 DOI: 10.1103/physrevb.51.2334] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
2
Biagi R, Betti MG, Mariani C. Space-charge layer, metallization, and collective excitations of the Bi/GaAs(110) interface. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:8198-8205. [PMID: 10009586 DOI: 10.1103/physrevb.49.8198] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
3
Umerski A, Srivastava GP. Geometry and electronic band structure of GaAs(110)-Bi (1 ML). PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:8450-8453. [PMID: 10007046 DOI: 10.1103/physrevb.48.8450] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Meng Y, Joyce JJ, Tang M, Anderson J, Lapeyre GJ. Band-bending model for the ideal Bi/InP(110) interface. PHYSICAL REVIEW. B, CONDENSED MATTER 1992;46:12818-12821. [PMID: 10003217 DOI: 10.1103/physrevb.46.12818] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
5
Patrin JC, Li YZ, Chander M, Weaver JH. Sb and Bi on GaAs(110): Substrate-stabilized overlayer structures studied with scanning tunneling microscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1992;46:10221-10231. [PMID: 10002865 DOI: 10.1103/physrevb.46.10221] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
6
Li YZ, Patrin JC, Chen Y, Weaver JH. Mg ordering, reaction, and crystallite formation on GaAs(110): Scanning tunneling microscopy and photoemission studies. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;44:8843-8849. [PMID: 9998842 DOI: 10.1103/physrevb.44.8843] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
7
Yang Y, Trafas BM, Luo Y, Siefert RL, Weaver JH. Effect of nonthermally activated hopping on overlayer morphology: Scanning-tunneling-microscopy study of Ti/GaAs(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1991;44:5720-5725. [PMID: 9998415 DOI: 10.1103/physrevb.44.5720] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
8
McLean AB, Ludeke R, Prietsch M, Heskett D, Tang D, Wong TM. Two-dimensional electronic structure of the GaAs(110)-Bi system. PHYSICAL REVIEW. B, CONDENSED MATTER 1991;43:7243-7253. [PMID: 9998188 DOI: 10.1103/physrevb.43.7243] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
9
Aldao CM, Aastuen DJ, Vos M, Vitomirov IM, Waddill GD, Benning PJ, Weaver JH. Interface formation with ions and neutral atoms. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;42:2878-2885. [PMID: 9995777 DOI: 10.1103/physrevb.42.2878] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
10
Ohno TR, Patrin JC, Meyer III, Weaver JH, Kimachi Y, Hidaka Y. Atom- and cluster-assembled interfaces: Cr growth on Bi2Sr2-xCa1+xCu2O8+y. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:11677-11680. [PMID: 9993610 DOI: 10.1103/physrevb.41.11677] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
11
Waddill GD, Komeda T, Yang Y, Weaver JH. Photoemission from metal dots on GaAs(110): Surface photovoltages and conductivity. PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:10283-10286. [PMID: 9993436 DOI: 10.1103/physrevb.41.10283] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
12
Aldao CM, Waddill GD, Benning PJ, Capasso C, Weaver JH. Photovoltaic effects in temperature-dependent Fermi-level movement for GaAs(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1990;41:6092-6095. [PMID: 9994501 DOI: 10.1103/physrevb.41.6092] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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