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Richard J, Lim LK, Denechaud V, Volchkov VV, Lecoutre B, Mukhtar M, Jendrzejewski F, Aspect A, Signoles A, Sanchez-Palencia L, Josse V. Elastic Scattering Time of Matter Waves in Disordered Potentials. PHYSICAL REVIEW LETTERS 2019; 122:100403. [PMID: 30932627 DOI: 10.1103/physrevlett.122.100403] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2018] [Indexed: 06/09/2023]
Abstract
We report on an extensive study of the elastic scattering time τ_{s} of matter waves in optical disordered potentials. Using direct experimental measurements, numerical simulations, and comparison with the first-order Born approximation based on the knowledge of the disorder properties, we explore the behavior of τ_{s} over more than 3 orders of magnitude, ranging from the weak to the strong scattering regime. We study in detail the location of the crossover and, as a main result, we reveal the strong influence of the disorder statistics, especially on the relevance of the widely used Ioffe-Regel-like criterion kl_{s}∼1. While it is found to be relevant for Gaussian-distributed disordered potentials, we observe significant deviations for laser speckle disorders that are commonly used with ultracold atoms. Our results are crucial for connecting experimental investigation of complex transport phenomena, such as Anderson localization, to microscopic theories.
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Affiliation(s)
- Jérémie Richard
- Laboratoire Charles Fabry, Institut d'Optique, CNRS, Université Paris-Saclay, 91127 Palaiseau cedex, France
| | - Lih-King Lim
- Laboratoire Charles Fabry, Institut d'Optique, CNRS, Université Paris-Saclay, 91127 Palaiseau cedex, France
- Zhejiang Institute of Modern Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Vincent Denechaud
- Laboratoire Charles Fabry, Institut d'Optique, CNRS, Université Paris-Saclay, 91127 Palaiseau cedex, France
- SAFRAN Sensing Solutions, Safran Tech, Rue des Jeunes Bois, Châteaufort CS 80112, 78772 Magny-les-Hameaux, France
| | - Valentin V Volchkov
- Laboratoire Charles Fabry, Institut d'Optique, CNRS, Université Paris-Saclay, 91127 Palaiseau cedex, France
- Max-Planck-Institute for Intelligent Systems, Max-Plack-Ring, 4, 72076 Tübingen, Germany
| | - Baptiste Lecoutre
- Laboratoire Charles Fabry, Institut d'Optique, CNRS, Université Paris-Saclay, 91127 Palaiseau cedex, France
| | - Musawwadah Mukhtar
- Laboratoire Charles Fabry, Institut d'Optique, CNRS, Université Paris-Saclay, 91127 Palaiseau cedex, France
| | - Fred Jendrzejewski
- Laboratoire Charles Fabry, Institut d'Optique, CNRS, Université Paris-Saclay, 91127 Palaiseau cedex, France
- Heidelberg University, Kirchhoff-Institut für Physik, Im Neuenheimer Feld 227, 69120 Heidelberg, Germany
| | - Alain Aspect
- Laboratoire Charles Fabry, Institut d'Optique, CNRS, Université Paris-Saclay, 91127 Palaiseau cedex, France
| | - Adrien Signoles
- Laboratoire Charles Fabry, Institut d'Optique, CNRS, Université Paris-Saclay, 91127 Palaiseau cedex, France
| | - Laurent Sanchez-Palencia
- CPHT, Ecole Polytechnique, CNRS, Université Paris-Saclay, Route de Saclay, 91128 Palaiseau, France
| | - Vincent Josse
- Laboratoire Charles Fabry, Institut d'Optique, CNRS, Université Paris-Saclay, 91127 Palaiseau cedex, France
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Friedland K, Hey R, Kostial H, Klann R, Ploog K. New Concept for the Reduction of Impurity Scattering in Remotely Doped GaAs Quantum Wells. PHYSICAL REVIEW LETTERS 1996; 77:4616-4619. [PMID: 10062583 DOI: 10.1103/physrevlett.77.4616] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Wetzel C, Winkler R, Drechsler M, Meyer BK, Rössler U, Scriba J, Kotthaus JP, Härle V, Scholz F. Electron effective mass and nonparabolicity in Ga0.47In0.53As/InP quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:1038-1041. [PMID: 9983549 DOI: 10.1103/physrevb.53.1038] [Citation(s) in RCA: 14] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Karavolas VC, Peeters FM, Singleton J, Nicholas RJ, Herlach F, Harris JJ, Borghs G. Magnetotransport in a pseudomorphic GaAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure with a Si delta -doping layer. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:12218-12231. [PMID: 9980367 DOI: 10.1103/physrevb.52.12218] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Das B, Subramaniam S, Melloch MR, Miller DC. Single-particle and transport scattering times in a back-gated GaAs/AlxGa1-xAs modulation-doped heterostructure. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:9650-9653. [PMID: 10005033 DOI: 10.1103/physrevb.47.9650] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Többen D, Schäffler F, Zrenner A, Abstreiter G. Magnetotransport measurements and low-temperature scattering times of electron gases in high-quality Si/Si1-xGex heterostructures. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:4344-4347. [PMID: 10004183 DOI: 10.1103/physrevb.46.4344] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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