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Wan W, Wickramaratne D, Dreher P, Harsh R, Mazin II, Ugeda MM. Nontrivial Doping Evolution of Electronic Properties in Ising-Superconducting Alloys. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200492. [PMID: 35243698 DOI: 10.1002/adma.202200492] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2022] [Revised: 02/16/2022] [Indexed: 06/14/2023]
Abstract
Transition metal dichalcogenides offer unprecedented versatility to engineer 2D materials with tailored properties to explore novel structural and electronic phase transitions. In this work, the atomic-scale evolution of the electronic ground state of a monolayer of Nb1- δ Moδ Se2 across the entire alloy composition range (0 < δ < 1) is investigated using low-temperature (300 mK) scanning tunneling microscopy and spectroscopy (STM/STS). In particular, the atomic and electronic structure of this 2D alloy throughout the metal to semiconductor transition (monolayer NbSe2 to MoSe2 ) is studied. The measurements enable extraction of the effective doping of Mo atoms, the bandgap evolution and the band shifts, which are monotonic with δ. Furthermore, it is demonstrated that collective electronic phases (charge density wave and superconductivity) are remarkably robust against disorder and further shown that the superconducting TC changes non-monotonically with doping. This contrasting behavior in the normal and superconducting state is explained using first-principles calculations. Mo doping is shown to decrease the density of states at the Fermi level and the magnitude of pair-breaking spin fluctuations as a function of Mo content. These results paint a detailed picture of the electronic structure evolution in 2D TMD alloys, which is of utmost relevance for future 2D materials design.
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Affiliation(s)
- Wen Wan
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
| | - Darshana Wickramaratne
- Center for Computational Materials Science, U.S. Naval Research Laboratory, Washington, DC 20375, USA
| | - Paul Dreher
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
| | - Rishav Harsh
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
| | - Igor I Mazin
- Department of Physics and Astronomy, George Mason University, Fairfax, VA, 22030, USA
- Quantum Science and Engineering Center, George Mason University, Fairfax, VA, 22030, USA
| | - Miguel M Ugeda
- Donostia International Physics Center (DIPC), Paseo Manuel de Lardizábal 4, San Sebastián, 20018, Spain
- Centro de Física de Materiales (CSIC-UPV-EHU), Paseo Manuel de Lardizábal 5, San Sebastián, 20018, Spain
- Ikerbasque, Basque Foundation for Science, Bilbao, 48013, Spain
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Osofsky MS, Soulen RJ, Claassen JH, Trotter G, Kim H, Horwitz JS. New insight into enhanced superconductivity in metals near the metal-insulator transition. PHYSICAL REVIEW LETTERS 2001; 87:197004. [PMID: 11690447 DOI: 10.1103/physrevlett.87.197004] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2001] [Indexed: 05/23/2023]
Abstract
We have studied the transport properties of disordered WSi films near the metal/insulator transition (MIT) and we have also reviewed the data for several other disordered materials near their MIT. In all cases, we found the presence of enhanced superconductivity. We constructed a superconductivity "phase diagram" (i.e., T(c) versus sigma) for each system, which reveals a striking correlation: In all cases, T(c) values are significantly enhanced only for samples whose conductivities lie within a narrow range on the metallic side of, and moderately near, the MIT. We present a heuristic model to explain this phenomenon.
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Affiliation(s)
- M S Osofsky
- Naval Research Laboratory, Washington, DC 20375, USA
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Ravindran P, Asokamani R. Electronic structure, phase stability, equation of state, and pressure-dependent superconducting properties of Zr3Al. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:668-678. [PMID: 9975728 DOI: 10.1103/physrevb.50.668] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Bose SK, Jepsen O, Andersen OK. Real-space calculation of the electrical resistivity of liquid 3d transition metals using tight-binding linear muffin-tin orbitals. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:4265-4275. [PMID: 10008897 DOI: 10.1103/physrevb.48.4265] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Nowak HJ, Andersen OK, Fujiwara T, Jepsen O, Vargas P. Electronic-structure calculations for amorphous solids using the recursion method and linear muffin-tin orbitals: Application to Fe80B20. PHYSICAL REVIEW. B, CONDENSED MATTER 1991; 44:3577-3598. [PMID: 9999987 DOI: 10.1103/physrevb.44.3577] [Citation(s) in RCA: 61] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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