Accurate theory of excitons in GaAs-Ga1-xAlxAs quantum wells

Is Dielectric Mismatch Actually Important in 2D Perovskites?

Understanding and controlling exciton properties are important for the design of 2D semiconductors, such as monolayer transition metal dichalcogenides (TMDCs) and 2D halide perovskites (HPs). This paper demonstrates that the widespread strategy used for the exciton engineering of 2D HPs, based on dielectric mismatch, is flawed since dielectric mismatch has very little correlation with exciton properties. For monolayer TMDCs, however, the dielectric mismatch is shown to be more important.

Emerging doping strategies in two-dimensional hybrid perovskite semiconductors for cutting edge optoelectronics applications

The past decade has witnessed tremendous progress in metal halide perovskites, particularly in lead (Pb) halide perovskites, because of their extraordinary performance in cutting-edge optoelectronic devices. However, the toxicity of Pb and the environmental stability of the perovskites are two major issues that this field is currently facing. In recent years, 2D layered perovskites have emerged as a promising alternative to the traditional 3D perovskites due to their structural flexibility and higher environmental stability, though they lack the desired level of device efficiency. Doping with target ions can drastically tune the crystal structure, optical properties, charge recombination dynamics, and electronic properties of the 2D perovskite. Although the field of doping in 2D perovskites has seen substantial growth in recent times, no comprehensive review is available on the recent advances in doping of 2D perovskites and its effect on the optoelectronic properties. In this review, we summarize the progress in doping in 2D perovskites based on different doping sites including progress in different synthesis strategies and their impact on crystal structures and various optoelectronic properties. We then highlight the recent achievements in doped 2D perovskites for photovoltaic, LED and other emerging applications. Finally, we conclude with the challenges and the future scope in the doping studies of 2D layered perovskites, which need to be addressed for further developments of next-generation 2D perovskite-based optoelectronic devices.

Broadband THz absorption spectrometer based on excitonic nonlinear optical effects

A broadly tunable THz source is realized via difference frequency generation, in which an enhancement to χ⁽³⁾ that is obtained via resonant excitation of III-V semiconductor quantum well excitons is utilized. The symmetry of the quantum wells (QWs) is broken by utilizing the built-in electric-field across a p-i-n junction to produce effective χ⁽²⁾ processes, which are derived from the high χ⁽³⁾. This χ⁽²⁾ media exhibits an onset of nonlinear processes at ~4 W cm^-2, thereby enabling area (and, hence, power) scaling of the THz emitter. Phase matching is realized laterally through normal incidence excitation. Using two collimated 130 mW continuous wave (CW) semiconductor lasers with ~1-mm beam diameters, we realize monochromatic THz emission that is tunable from 0.75 to 3 THz and demonstrate the possibility that this may span 0.2-6 THz with linewidths of ~20 GHz and efficiencies of ~1 × 10^-5, thereby realizing ~800 nW of THz power. Then, transmission spectroscopy of atmospheric features is demonstrated, thereby opening the way for compact, low-cost, swept-wavelength THz spectroscopy.

Bose Condensation of Long-Living Direct Excitons in an Off-Resonant Cavity

We propose a way to increase the lifetime of two-dimensional direct excitons and show the possibility to observe their macroscopically coherent state at temperatures much higher than that of indirect exciton condensation. For a single GaAs quantum well embedded in photonic layered heterostructures with subwavelength period, we predict the exciton radiative decay to be strongly suppressed. Quantum hydrodynamics joined with the Bogoliubov approach are used to study the Berezinskii-Kosterlitz-Thouless crossover in a finite exciton system with intermediate densities. Below the estimated critical temperatures, drastic growth of the correlation length is shown to be accompanied by a manyfold increase of the photoluminescence intensity.

Optical absorption by indirect excitons in a transition metal dichalcogenide/hexagonal boron nitride heterostructure

We study optical transitions in spatially indirect excitons in transition metal dichalcogenide (TMDC) heterostructures separated by an integer number of hexagonal boron nitride (h-BN) monolayers. By solving the Schrödinger equation with the Keldysh potential for a spatially indirect exciton, we obtain eigenfunctions and eigenenergies for the ground and excited states and study their dependence on the interlayer separation, controlled by varying the number of h-BN monolayers. The oscillator strength, optical absorption coefficient, and optical absorption factor, the fraction of incoming photons absorbed in the TMDC/h-BN/TMDC heterostructure, are evaluated and studied as a function of the interlayer separation. Using input parameters from the existing literature which give the largest and the smallest spatially indirect exciton binding energy, we provide upper and lower bounds on all quantities presented.

Electrons, Excitons, and Phonons in Two-Dimensional Hybrid Perovskites: Connecting Structural, Optical, and Electronic Properties

Two-dimensional (2D) hybrid perovskites are stoichiometric compounds consisting of alternating inorganic metal-halide sheets and organoammonium cationic layers. This materials class is widely tailorable in composition, structure, and dimensionality and is providing an intriguing playground for the solid-state chemistry and physics communities to uncover structure-property relationships. In this Perspective, we describe semiconducting 2D perovskites containing lead and tin halide inorganic frameworks. In these 2D perovskites, charges are typically confined to the inorganic framework because of strong quantum and dielectric confinement effects, and exciton binding energies are many times greater than kT at room temperature. We describe the role of the heavy atoms in the inorganic framework; the geometry and chemistry of organic cations; and the "softness" of the organic-inorganic lattice on the electronic structure and dynamics of electrons, excitons, and phonons that govern the physical properties of these materials.

Room temperature strong coupling in a semiconductor microcavity with embedded AlGaAs quantum wells designed for polariton lasing

We report a systematic study of the temperature and excitation density behavior of an AlAs/AlGaAs, vertically emitting microcavity with embedded ternary Al_0.20Ga_0.80As/AlAs quantum wells in the strong coupling regime. Temperature-dependent photoluminescence measurements of the bare quantum wells indicate a crossover from the type-II indirect to the type-I direct transition. The resulting mixing of quantum well and barrier ground states in the conduction band leads to an estimated exciton binding energy systematically exceeding 25 meV. The formation of exciton-polaritons is evidenced in our quantum well microcavity via reflection measurements with Rabi splittings ranging from (13.93 ± 0.15) meV at low temperature (30 K) to (8.58 ± 0.40) meV at room temperature (300 K). Furthermore, the feasibility of polariton laser operation is demonstrated under non-resonant optical excitation conditions at 20 K and emission around 1.835 eV.

Experimental Verification of the Very Strong Coupling Regime in a GaAs Quantum Well Microcavity

The dipole coupling strength g between cavity photons and quantum well excitons determines the regime of light matter coupling in quantum well microcavities. In the strong coupling regime, a reversible energy transfer between exciton and cavity photon takes place, which leads to the formation of hybrid polaritonic resonances. If the coupling is further increased, a hybridization of different single exciton states emerges, which is referred to as the very strong coupling regime. In semiconductor quantum wells such a regime is predicted to manifest as a photon-mediated electron-hole coupling leading to different excitonic wave functions for the two polaritonic branches when the ratio of the coupling strength to exciton binding energy g/E_{B} approaches unity. Here, we verify experimentally the existence of this regime in magneto-optical measurements on a microcavity characterized by g/E_{B}≈0.64, showing that the average electron-hole separation of the upper polariton is significantly increased compared to the bare quantum well exciton Bohr radius. This yields a diamagnetic shift around 0 detuning that exceeds the shift of the lower polariton by 1 order of magnitude and the bare quantum well exciton diamagnetic shift by a factor of 2. The lower polariton exhibits a diamagnetic shift smaller than expected from the coupling of a rigid exciton to the cavity mode, which suggests more tightly bound electron-hole pairs than in the bare quantum well.

Exciton-polariton trapping and potential landscape engineering

Exciton-polaritons in semiconductor microcavities have become a model system for the studies of dynamical Bose-Einstein condensation, macroscopic coherence, many-body effects, nonclassical states of light and matter, and possibly quantum phase transitions in a solid state. These low-mass bosonic quasiparticles can condense at comparatively high temperatures up to 300 K, and preserve the fundamental properties of the condensate, such as coherence in space and time domain, even when they are out of equilibrium with the environment. Although the presence of a confining potential is not strictly necessary in order to observe Bose-Einstein condensation, engineering of the polariton confinement is a key to controlling, shaping, and directing the flow of polaritons. Prototype polariton-based optoelectronic devices rely on ultrafast photon-like velocities and strong nonlinearities exhibited by polaritons, as well as on their tailored confinement. Nanotechnology provides several pathways to achieving polariton confinement, and the specific features and advantages of different methods are discussed in this review. Being hybrid exciton-photon quasiparticles, polaritons can be trapped via their excitonic as well as photonic component, which leads to a wide choice of highly complementary trapping techniques. Here, we highlight the almost free choice of the confinement strengths and trapping geometries that provide powerful means for control and manipulation of the polariton systems both in the semi-classical and quantum regimes. Furthermore, the possibilities to observe effects of the polariton blockade, Mott insulator physics, and population of higher-order energy bands in sophisticated lattice potentials are discussed. Observation of such effects could lead to realization of novel polaritonic non-classical light sources and quantum simulators.

Observation of Dielectrically Confined Excitons in Ultrathin GaN Nanowires up to Room Temperature

The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in semiconductor heterostructures. Dielectric confinement, which gives rises to much stronger enhancement, has proven to be more difficult to achieve because of the rapid nonradiative surface/interface recombination in hybrid dielectric-semiconductor structures. Here, we demonstrate intense excitonic emission from bare GaN nanowires with diameters down to 6 nm. The large dielectric mismatch between the nanowires and vacuum greatly enhances the Coulomb interaction, with the thinnest nanowires showing the strongest dielectric confinement and the highest radiative efficiency at room temperature. In situ monitoring of the fabrication of these structures allows one to accurately control the degree of dielectric enhancement. These ultrathin nanowires may constitute the basis for the fabrication of advanced low-dimensional structures with an unprecedented degree of confinement.

Theoretical study of density-dependent intraexcitonic transitions in optically excited quantum wells

We present a theoretical study of the terahertz-pulse-induced intraexcitonic dynamics of optically created excitons in quantum wells, providing an explanation of the density dependence of the 1s-2p intraexcitonic transitions observed experimentally. We find that two types of many-body interactions, the phase space filling and the exchange interaction, are responsible for the observed red-shift of the resonance frequency. In addition to calculating the density renormalized exciton energy levels, which offer indirect information regarding the density-dependent 1s-2p transitions, we developed a mean-field approach to examine the intraexcitonic transition process directly. The resulting dynamic equation provides a useful tool to gain insight into the intraexcitonic transitions in semiconductor nanostructures.

Resonant Rayleigh scattering of exciton-polaritons in multiple quantum wells

A theoretical concept of resonant Rayleigh scattering (RRS) of exciton-polaritons in multiple quantum wells (QWs) is presented. The optical coupling between excitons in different QWs can strongly affect the RRS dynamics, giving rise to characteristic temporal oscillations on a picosecond scale. Bragg and anti-Bragg arranged QW structures with the same excitonic parameters are predicted to have drastically different RRS spectra. Experimental data on the RRS from multiple QWs show the predicted strong temporal oscillations at small scattering angles, which are well explained by the presented theory.

Microcavities combining a semiconductor with a fused-silica microsphere

We report studies of a novel microcavity system that combines a semiconductor quantum well with a fused-silica microsphere. We show that excitonic photoluminescence from the quantum well couples efficiently into whispering-gallery modes. Using a resonant light-scattering technique, we demonstrate that the Q factor of the combined system exceeds 10(5) . Our studies also point to the necessity of using semiconductor nanostructures with a capping layer no more than a few nanometers thick.