Frequency and magnetic-field dependence of the dielectric constant and conductivity of La2CuO4+y

Enhanced Thermal Hall Effect in Nearly Ferroelectric Insulators

In the context of recent experimental observations of an unexpectedly large thermal Hall conductivity, κ_{H}, in insulating La_{2}CuO_{4} (LCO) and SrTiO_{3} (STO), we theoretically explore conditions under which acoustic phonons can give rise to such a large κ_{H}. Both the intrinsic and extrinsic contributions to κ_{H} are large in proportion to the dielectric constant, ε, and the "flexoelectric" coupling, F. While the intrinsic contribution is still orders of magnitude smaller than the observed effect, an extrinsic contribution proportional to the phonon mean-free path appears likely to account for the observations, at least in STO. We predict a larger intrinsic κ_{H} in certain insulating perovskites.

ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4

Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La_2−xSr_xCuO₄ films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to −2 V. A non-electrostatic mechanism takes over for gate voltages below −2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa₂Cu₃O_7−x and La_2−xSr_xCuO₄.

Oxygen Displacement in Cuprates under Ionic Liquid Field-Effect Gating

We studied structural changes in a 5 unit cell thick La_1.96Sr_0.04CuO₄ film, epitaxially grown on a LaSrAlO₄ substrate with a single unit cell buffer layer, when ultra-high electric fields were induced in the film by applying a gate voltage between the film (ground) and an ionic liquid in contact with it. Measuring the diffraction intensity along the substrate-defined Bragg rods and analyzing the results using a phase retrieval method we obtained the three-dimensional electron density in the film, buffer layer, and topmost atomic layers of the substrate under different applied gate voltages. The main structural observations were: (i) there were no structural changes when the voltage was negative, holes were injected into the film making it more metallic and screening the electric field; (ii) when the voltage was positive, the film was depleted of holes becoming more insulating, the electric field extended throughout the film, the partial surface monolayer became disordered, and equatorial oxygen atoms were displaced towards the surface; (iii) the changes in surface disorder and the oxygen displacements were both reversed when a negative voltage was applied; and (iv) the c-axis lattice constant of the film did not change in spite of the displacement of equatorial oxygen atoms.

Ferroelectricity in underdoped La-based cuprates

Doping a “parent” antiferromagnetic Mott insulator in cuprates leads to short-range electronic correlations and eventually to high-T_c superconductivity. However, the nature of charge correlations in the lightly doped cuprates remains unclear. Understanding the intermediate electronic phase in the phase diagram (between the parent insulator and the high-T_c superconductor) is expected to elucidate the complexity both inside and outside the superconducting dome, and in particular in the underdoped region. One such phase is ferroelectricity whose origin and relation to the properties of high-T_c superconductors is subject of current research. Here we demonstrate that ferroelectricity and the associated magnetoelectric coupling are in fact common in La-214 cuprates namely, La_2-xSr_xCuO₄, La₂Li_xCu_1-xO₄ and La₂CuO_4+x. It is proposed that ferroelectricity may result from local CuO₆ octahedral distortions, associated with the dopant atoms and clustering of the doped charge carriers, which break spatial inversion symmetry at the local scale whereas magnetoelectric coupling can be tuned through Dzyaloshinskii-Moriya interaction.

Flexible and transparent dielectric film with a high dielectric constant using chemical vapor deposition-grown graphene interlayer

We have devised a dielectric film with a chemical vapor deposited graphene interlayer and studied the effect of the graphene interlayer on the dielectric performance. The highly transparent and flexible film was a polymer/graphene/polymer 'sandwich-structure' fabricated by a one-step transfer method that had a dielectric constant of 51, with a dielectric loss of 0.05 at 1 kHz. The graphene interlayer in the film forms a space charge layer, i.e., an accumulation of polarized charge carriers near the graphene, resulting in an induced space charge polarization and enhanced dielectric constant. The characteristic of the space charge layer for the graphene dielectric film, the sheet resistance of the graphene interlayer, was adjusted through thermal annealing that caused partial oxidation. The dielectric film with higher sheet resistance due to the oxidized graphene interlayer had a significantly lower dielectric constant compared to that with the graphene with lower interlayer sheet resistance. Oxidizing the graphene interlayer yields a smaller and thinner space charge density in the dielectric film, ultimately leading to decreased capacitance. Considering the simplicity of the fabrication process and high dielectric performance, as well as the high transparency and flexibility, this film is promising for applications in plastic electronics.

Electrostatic modulation of the superfluid density in an ultrathin film

By capacitively charging an underdoped ultrathin La2-xSrxCuO4 film with an electric field applied across a gate insulator with a high dielectric constant, relative changes of the areal superfluid density ns of unprecedented strength were observed in measurements of the film kinetic inductance. Although ns appears to be substantially reduced by disorder, the data provide, for the first time on the same sample, direct compelling evidence for the Uemura relation Tc proportional to ns(T=0) in the underdoped regime of copper-oxide superconductors.

63Cu NQR evidence for spatial variation of hole concentration in La2-xSrxCuO4

We report experimental evidence for the spatial variation of hole concentration x(hole) in the high T(c) superconductor La2-xSrxCuO4 ( 0.04 < or = x < or = 0.16) via 63Cu NQR using 63Cu isotope enriched samples. We demonstrate that the extent of the spatial variation of the local hole concentration Delta(x)hole is reflected on (63)1/T1 and deduce the temperature dependence. Delta(x)hole increases below 500-600 K, and reaches values as large as Delta(x)hole/x approximately 0.5 below approximately 150 K. We estimate the length scale of the spatial variation in x(hole) to be R(hole) greater, similar 3 nm from an analysis of the NQR spectrum.