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For: McLean AB, Ludeke R, Prietsch M, Heskett D, Tang D, Wong TM. Two-dimensional electronic structure of the GaAs(110)-Bi system. Phys Rev B Condens Matter 1991;43:7243-7253. [PMID: 9998188 DOI: 10.1103/physrevb.43.7243] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
He ZQ, Khazmi YO, Kanski J, Ilver L, Nilsson PO, Karlsson UO. As overlayer on GaAs(110) studied with photoemission. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;52:16602-16607. [PMID: 9981060 DOI: 10.1103/physrevb.52.16602] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
2
Umerski A, Srivastava GP. Geometry and electronic band structure of an ordered monolayer deposition of Bi on III-V(110) semiconductor surfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:2334-2346. [PMID: 9978986 DOI: 10.1103/physrevb.51.2334] [Citation(s) in RCA: 38] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
3
McIlroy DN, Heskett D, McLean AB, Ludeke R, Munekata H, DiNardo NJ. Electronic band structure of the two-dimensional surface-state bands of the (1 x 1) and (1 x 2) phases of Bi/GaSb(110). PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:11897-11904. [PMID: 10007531 DOI: 10.1103/physrevb.48.11897] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Umerski A, Srivastava GP. Geometry and electronic band structure of GaAs(110)-Bi (1 ML). PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:8450-8453. [PMID: 10007046 DOI: 10.1103/physrevb.48.8450] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
5
McIlroy DN, Heskett D, Swanston DM, McLean AB, Ludeke R, Munekata H, Prietsch M, DiNardo NJ. Occupied surface-state bands of Bi(1 x 1) overlayers on an InAs(110) surface grown by molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;47:3751-3759. [PMID: 10006478 DOI: 10.1103/physrevb.47.3751] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
6
Betti MG, Pedio M, Mariani C. Bismuth and antimony on GaAs(110): Dielectric and electronic properties. PHYSICAL REVIEW. B, CONDENSED MATTER 1992;45:14057-14064. [PMID: 10001524 DOI: 10.1103/physrevb.45.14057] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
7
Compañó R, Mariani C. One-dimensional "dislocation-related" electronic states at the GaAs(110)-Bi(1 x 1) interface. PHYSICAL REVIEW LETTERS 1992;68:986-989. [PMID: 10046049 DOI: 10.1103/physrevlett.68.986] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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