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Shamirzaev TS, Atuchin VV. Effect of n- and p-Doping on Vacancy Formation in Cationic and Anionic Sublattices of (In,Al)As/AlAs and Al(Sb,As)/AlAs Heterostructures. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2136. [PMID: 37513147 PMCID: PMC10383981 DOI: 10.3390/nano13142136] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2023] [Revised: 07/18/2023] [Accepted: 07/21/2023] [Indexed: 07/30/2023]
Abstract
The vacancy generation dynamics in doped semiconductor heterostructures with quantum dots (QD) formed in the cationic and anionic sublattices of AlAs is studied. We demonstrate experimentally that the vacancy-mediated high temperature diffusion is enhanced (suppressed) in n- and p-doped heterostructures with QDs formed in the cationic sublattice, while the opposite behavior occurs in the heterostructures with QDs formed in the anionic sublattice. A model describing the doping effect on the vacancy generation dynamics is developed. The effect of nonuniform charge carrier spatial distribution arisen in heterostructures at high temperatures on the vacancy generation and diffusion is revealed.
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Affiliation(s)
- Timur S Shamirzaev
- Laboratory of Physics and Technology of Heterostructures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
- Department of Physics, Novosibirsk State University, Novosibirsk 630090, Russia
| | - Victor V Atuchin
- Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 630090, Russia
- Department of Applied Physics, Novosibirsk State University, Novosibirsk 630090, Russia
- Research and Development Department, Kemerovo State University, Kemerovo 650000, Russia
- Department of Industrial Machinery Design, Novosibirsk State Technical University, Novosibirsk 630073, Russia
- R&D Center "Advanced Electronic Technologies", Tomsk State University, Tomsk 634034, Russia
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Jones ACL, Greaves RG, Codding CL, Selim FA. Development of a pulsed, variable-energy positron beam for atomic scale defect studies. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2022; 93:043903. [PMID: 35489933 DOI: 10.1063/5.0077750] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/05/2021] [Accepted: 03/17/2022] [Indexed: 06/14/2023]
Abstract
Positron annihilation spectroscopy provides a sensitive means of non-destructive characterization of materials, capable of probing single atom vacancies in solids with 10-7 sensitivity. We detail here the development of a magnetically guided, variable energy, pulsed positron beam designed to conduct depth-dependent defect studies in metals, semiconductors, and dielectrics, which will be the first of its kind in the United States. The design of the target stage provides capabilities for measurements during in situ annealing up to 800 °C and incorporates a new approach to minimize the background due to energetic backscattered positrons. The developed beam at Bowling Green State University provides a powerful tool for characterization of thin films, devices, and ion irradiated materials.
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Affiliation(s)
- A C L Jones
- Department of Physics and Astronomy, Bowling Green State University, Bowling Green, Ohio 43402, USA
| | - R G Greaves
- Department of Physics and Astronomy, University of California Riverside, Riverside, California, 92507, USA
| | - C L Codding
- Center for Photochemical Sciences, Bowling Green State University, Bowling Green, Ohio 43402, USA
| | - F A Selim
- Department of Physics and Astronomy, Bowling Green State University, Bowling Green, Ohio 43402, USA
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Zubiaga A, Warringham R, Mitchell S, Gerchow L, Cooke D, Crivelli P, Pérez-Ramírez J. Pore Topology Effects in Positron Annihilation Spectroscopy of Zeolites. Chemphyschem 2017; 18:470-479. [PMID: 27976501 DOI: 10.1002/cphc.201601258] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/16/2016] [Indexed: 11/06/2022]
Abstract
Positron annihilation spectroscopy (PAS) is a powerful method to study the size and connectivity of pores in zeolites. The lifetime of positronium within the host material is commonly described by the Tao-Eldrup model. However, one of its largest limitations arises from the simple geometries considered for the shape of the pores, which cannot describe accurately the complex topologies in zeolites. Here, an atomic model that combines the Tao potential with the crystallographic structure is introduced to calculate the distribution and lifetime of Ps intrinsic to a given framework. A parametrization of the model is undertaken for a set of widely applied zeolite framework types (*BEA, FAU, FER, MFI, MOR, UTL), before extending the model to all known structures. The results are compared to structural and topological descriptors, and to the Tao-Eldrup model adapted for zeolites, demonstrating the intricate dependence of the lifetime on the pore architecture.
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Affiliation(s)
- Asier Zubiaga
- Institute for Chemical and Bioengineering, Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir-Prelog-Weg 1, 8093, Zurich, Switzerland
| | - Robbie Warringham
- Institute for Chemical and Bioengineering, Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir-Prelog-Weg 1, 8093, Zurich, Switzerland
| | - Sharon Mitchell
- Institute for Chemical and Bioengineering, Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir-Prelog-Weg 1, 8093, Zurich, Switzerland
| | - Lars Gerchow
- Institute for Particle Physics, Department of Physics, ETH Zurich, Otto-Stern-Weg 5, 8093, Zurich, Switzerland
| | - David Cooke
- Institute for Particle Physics, Department of Physics, ETH Zurich, Otto-Stern-Weg 5, 8093, Zurich, Switzerland
| | - Paolo Crivelli
- Institute for Particle Physics, Department of Physics, ETH Zurich, Otto-Stern-Weg 5, 8093, Zurich, Switzerland
| | - Javier Pérez-Ramírez
- Institute for Chemical and Bioengineering, Department of Chemistry and Applied Biosciences, ETH Zurich, Vladimir-Prelog-Weg 1, 8093, Zurich, Switzerland
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Schultz PA. The E1-E2 center in gallium arsenide is the divacancy. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2015; 27:075801. [PMID: 25634829 DOI: 10.1088/0953-8984/27/7/075801] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Based on defect energy levels computed from first-principles calculations, it is shown the E1-E2 center in irradiated GaAs cannot be due to an isolated arsenic vacancy. The only simple intrinsic defect with levels compatible with E1 and E2 is the divacancy. The arsenic monovacancy is reassigned to the E3 center in irradiated GaAs. These new assignments are shown to reconcile a number of seemingly contradictory experimental observations.
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Affiliation(s)
- Peter A Schultz
- Multiscale Science, Sandia National Laboratories, Albuquerque, NM 87185-1322, USA
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Castaldini A, Cavallini A, Del Papa C, Fuochi G, Alietti M, Canali C, Nava F, Paccagnellam A, Lanzieriv C. Defects Induced by Protons and γ-Rays in Semi-Insulating Gaas Detectors. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-373-523] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
Abstract
AbstractSemi-insulating gallium arsenide has been irradiated by protons and by gamma-rays with different doses. The irradiation-induced deep level defects have been investigated by current transient spectroscopy to find their energy, capture cross sections and generation rate.Two electron traps at Ec+0.14eV(E13) and Ec-0.70eV(E4) and a hole trap at Ec-0.14eV(H2) in addition to the levels existing before the irradiation have been detected in the irradiated samples. These findings have been related to the performance of gallium arsenide charge particle detectors.
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Affiliation(s)
- K. Ellmer
- a Hahn-Meitner-Institut, Department Solare Energetik , Glienicker Strasse 100, D-14109, Berlin , Germany
| | - C. Höpfner
- a Hahn-Meitner-Institut, Department Solare Energetik , Glienicker Strasse 100, D-14109, Berlin , Germany
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Tuomisto F, Pennanen K, Saarinen K, Sadowski J. Ga sublattice defects in (Ga,Mn)As: thermodynamical and kinetic trends. PHYSICAL REVIEW LETTERS 2004; 93:055505. [PMID: 15323708 DOI: 10.1103/physrevlett.93.055505] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2004] [Indexed: 05/24/2023]
Abstract
We have used positron annihilation spectroscopy and infrared absorption measurements to study the Ga sublattice defects in epitaxial Ga(1-x)MnxAs with Mn content varying from 0% to 5%. We show that the Ga vacancy concentration decreases and As antisite concentration increases with increasing Mn content. This is in agreement with thermodynamical considerations for the electronic part of the formation energy of the Ga sublattice point defects. However, the absolute defect concentrations imply that they are determined rather by the growth kinetics than by the thermodynamical equilibrium. The As antisite concentrations in the samples are large enough to be important for compensation and magnetic properites. In addition, the Ga vacancies are likely to be involved in the diffusion and clustering of Mn at low annealing temperatures.
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Affiliation(s)
- F Tuomisto
- Laboratory of Physics, Helsinki University of Technology, P.O. Box 1100, 02015 HUT, Finland.
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Chen Z, Wang Z, Wang S. Discrimination of defects in III–V semiconductors by positron lifetime distribution. Radiat Phys Chem Oxf Engl 1993 2000. [DOI: 10.1016/s0969-806x(00)00243-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
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Reddy CV, Fung S, Beling CD. Nature of the bulk defects in GaAs through high-temperature quenching studies. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:11290-11297. [PMID: 9984915 DOI: 10.1103/physrevb.54.11290] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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10
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Laine T, Saarinen K, Mäkinen J, Hautojärvi P, Corbel C, Pfeiffer LN, Citrin PH. Observation of compensating Ga vacancies in highly Si-doped GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:R11050-R11053. [PMID: 9984983 DOI: 10.1103/physrevb.54.r11050] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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11
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Pöykkö S, Puska MJ, Alatalo M, Nieminen RM. Metastable defect complexes in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:7909-7916. [PMID: 9984466 DOI: 10.1103/physrevb.54.7909] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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12
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Barbiellini B, Puska MJ, Korhonen T, Harju A, Torsti T, Nieminen RM. Calculation of positron states and annihilation in solids: A density-gradient-correction scheme. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:16201-16213. [PMID: 9983453 DOI: 10.1103/physrevb.53.16201] [Citation(s) in RCA: 41] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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13
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Laine T, Mäkinen J, Saarinen K, Hautojärvi P, Corbel C, Fille ML, Gibart P. Vacancylike structure of the DX center in Te-doped AlxGa1-xAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:11025-11033. [PMID: 9982675 DOI: 10.1103/physrevb.53.11025] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Kuisma S, Saarinen K, Hautojärvi P, Corbel C, LeBerre C. Optical processes related to arsenic vacancies in semi-insulating GaAs studied by positron spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:9814-9830. [PMID: 9982542 DOI: 10.1103/physrevb.53.9814] [Citation(s) in RCA: 15] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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15
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Mäkinen J, Laine T, Partanen J, Saarinen K, Hautojärvi P, Tappura K, Hakkarainen T, Asonen H, Pessa M, Kauppinen JP, Vänttinen K, Paalanen MA, Likonen J. Donor levels and the microscopic structure of the DX center in n-type Si-doped AlxGa0.51-xIn0.49P grown by molecular-beam epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 53:7851-7862. [PMID: 9982235 DOI: 10.1103/physrevb.53.7851] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Saarinen K, Seitsonen AP, Hautojärvi P, Corbel C. Introduction and recovery of point defects in electron-irradiated Te- and Si-doped GaAs studied by positron lifetime spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:10932-10946. [PMID: 9980192 DOI: 10.1103/physrevb.52.10932] [Citation(s) in RCA: 11] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Corbel C, Saarinen K, Kuisma S, Hautojärvi P, Fornari R. Evidence of two kinds of acceptors in undoped semi-insulating GaAs: Positron trapping at gallium vacancies and negative ions. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:8112-8120. [PMID: 9979809 DOI: 10.1103/physrevb.52.8112] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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18
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Mäkinen J, Laine T, Saarinen K, Hautojärvi P, Corbel C, Airaksinen VM, Nagle J. Microscopic structure of the DX center in Si-doped AlxGa1-xAs: Observation of a vacancy by positron-annihilation spectroscopy. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:4870-4883. [PMID: 9981671 DOI: 10.1103/physrevb.52.4870] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Seong H, Lewis LJ. Tight-binding molecular-dynamics study of point defects in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 52:5675-5684. [PMID: 9981753 DOI: 10.1103/physrevb.52.5675] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Saarinen K, Kuisma S, Mäkinen J, Hautojärvi P, Törnqvist M, Corbel C. Introduction of metastable vacancy defects in electron-irradiated semi-insulating GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:14152-14163. [PMID: 9978343 DOI: 10.1103/physrevb.51.14152] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Alatalo M, Kauppinen H, Saarinen K, Puska MJ, Mäkinen J, Hautojärvi P, Nieminen RM. Identification of vacancy defects in compound semiconductors by core-electron annihilation: Application to InP. PHYSICAL REVIEW. B, CONDENSED MATTER 1995; 51:4176-4185. [PMID: 9979256 DOI: 10.1103/physrevb.51.4176] [Citation(s) in RCA: 78] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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22
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Dannefaer S, Kerr D. Positron-lifetime measurements between 300 and 800 K in GaAs and GaP. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:14096-14103. [PMID: 9975626 DOI: 10.1103/physrevb.50.14096] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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23
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Ambigapathy R, Manuel AA, Hautojärvi P, Saarinen K, Corbel C. Positron-annihilation studies of neutral and negatively charged As vacancies in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 50:2188-2199. [PMID: 9976433 DOI: 10.1103/physrevb.50.2188] [Citation(s) in RCA: 23] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Gilgien L, Galli G, Gygi F, Car R. Ab initio study of positron trapping at a vacancy in GaAs. PHYSICAL REVIEW LETTERS 1994; 72:3214-3217. [PMID: 10056136 DOI: 10.1103/physrevlett.72.3214] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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25
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Saarinen K, Kuisma S, Hautojärvi P, Corbel C, LeBerre C. Metastable vacancy in the EL2 defect in GaAs studied by positron-annihilation spectroscopies. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:8005-8016. [PMID: 10009563 DOI: 10.1103/physrevb.49.8005] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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26
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Krause-Rehberg R, Leipner HS, Kupsch A, Polity A, Drost T. Positron study of defects in as-grown and plastically deformed GaAs:Te. PHYSICAL REVIEW. B, CONDENSED MATTER 1994; 49:2385-2395. [PMID: 10011072 DOI: 10.1103/physrevb.49.2385] [Citation(s) in RCA: 17] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Mäkinen J, Laine T, Saarinen K, Hautojärvi P, Corbel C, Airaksinen VM, Gibart P. Observation of a vacancy at the DX center in Si- and Sn-doped AlGaAs. PHYSICAL REVIEW LETTERS 1993; 71:3154-3157. [PMID: 10054871 DOI: 10.1103/physrevlett.71.3154] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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Dannefaer S, Kerr D. Positron binding energies and specific trapping rates for monovacancies in GaAs and InSb. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:9142-9145. [PMID: 10007141 DOI: 10.1103/physrevb.48.9142] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Saarinen K, Kuisma S, Hautojärvi P, Corbel C, LeBerre C. Native vacancies in semi-insulating GaAs observed by positron lifetime spectroscopy under photoexcitation. PHYSICAL REVIEW LETTERS 1993; 70:2794-2797. [PMID: 10053654 DOI: 10.1103/physrevlett.70.2794] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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30
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Soininen E, Mäkinen J, Hautojärvi P, Corbel C, Freundlich A, Grenet JC. Defects in GaAs on Si studied with the positron-beam technique. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:12394-12401. [PMID: 10003155 DOI: 10.1103/physrevb.46.12394] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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31
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Xu H. Divacancies in the Ga-related III-V compound semiconductors: Electronic structure and charge states. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 46:12251-12260. [PMID: 10003137 DOI: 10.1103/physrevb.46.12251] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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32
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Laasonen K, Nieminen RM, Puska MJ. First-principles study of fully relaxed vacancies in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1992; 45:4122-4130. [PMID: 10002024 DOI: 10.1103/physrevb.45.4122] [Citation(s) in RCA: 29] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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