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For: Kuhn T, Reggiani L, Varani L, Gasquet D, Vaissière JC, Nougier JP. Field-dependent electronic noise of lightly doped p-type Si at 77 K. Phys Rev B Condens Matter 1991;44:1074-1080. [PMID: 9999613 DOI: 10.1103/physrevb.44.1074] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Varani L, Reggiani L, Mitin V, Kuhn T. Nonexponential generation-recombination dynamics in doped semiconductors as a possible source of high-frequency 1/f noise. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:4405-4411. [PMID: 10008913 DOI: 10.1103/physrevb.48.4405] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
2
Kuhn T, Hüpper G, Quade W, Rein A, Schöll E, Varani L, Reggiani L. Microscopic analysis of noise and nonlinear dynamics in p-type germanium. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;48:1478-1485. [PMID: 10008507 DOI: 10.1103/physrevb.48.1478] [Citation(s) in RCA: 10] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
3
Reggiani L, Kuhn T, Varani L. Noise and correlation functions of hot carriers in semiconductors. ACTA ACUST UNITED AC 1992. [DOI: 10.1007/bf00324165] [Citation(s) in RCA: 29] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
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