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Citation(s) in
RCA
3
(from Reference Citation Analysis)
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1993 (2)
1992 (1)
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PHYSICAL REVIEW. B, CONDENSED MATTER (2)
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For:
Kuhn T
, Reggiani L, Varani L, Gasquet D, Vaissière JC, Nougier JP.
Field-dependent electronic noise of lightly doped p-type Si at 77 K.
Phys Rev B Condens Matter
1991;
44
:1074-1080. [PMID:
9999613
DOI:
10.1103/physrevb.44.1074
]
[
Citation(s) in
RCA
: 4
]
[
Impact Index Per Article: 0.1
]
[
Reference Citation Analysis
]
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[Indexed: 04/12/2023]
Number
Cited by Other Article(s)
1
Varani L
, Reggiani L, Mitin V, Kuhn T. Nonexponential generation-recombination dynamics in doped semiconductors as a possible source of high-frequency 1/f noise.
PHYSICAL REVIEW. B, CONDENSED MATTER
1993;
48
:4405-4411. [PMID:
10008913
DOI:
10.1103/physrevb.48.4405
]
[
Citation(s) in
RCA
: 3
]
[
Impact Index Per Article: 0.1
]
[
Reference Citation Analysis
]
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[Indexed: 04/12/2023]
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2
Kuhn T
, Hüpper G, Quade W, Rein A, Schöll E, Varani L, Reggiani L. Microscopic analysis of noise and nonlinear dynamics in p-type germanium.
PHYSICAL REVIEW. B, CONDENSED MATTER
1993;
48
:1478-1485. [PMID:
10008507
DOI:
10.1103/physrevb.48.1478
]
[
Citation(s) in
RCA
: 10
]
[
Impact Index Per Article: 0.3
]
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Reference Citation Analysis
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[Indexed: 04/12/2023]
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3
Reggiani L
, Kuhn T, Varani L. Noise and correlation functions of hot carriers in semiconductors.
ACTA ACUST UNITED AC
1992. [DOI:
10.1007/bf00324165
]
[
Citation(s) in
RCA
: 29
]
[
Impact Index Per Article: 0.9
]
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[Indexed: 11/24/2022]
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