Missing integral quantum Hall effect in a wide single quantum well

Origin of Pinning Disorder in Magnetic-Field-Induced Wigner Solids

At low Landau level filling factors (ν), Wigner solid phases of two-dimensional electron systems in GaAs are pinned by disorder and exhibit a pinning mode, whose frequency is a measure of the disorder that pins the Wigner solid. Despite numerous studies spanning the past three decades, the origin of the disorder that causes the pinning and determines the pinning mode frequency remains unknown. Here, we present a study of the pinning mode resonance in the low-ν Wigner solid phases of a series of ultralow-disorder GaAs quantum wells which are similar except for their varying well widths d. The pinning mode frequencies f_{p} decrease strongly as d increases, with the widest well exhibiting f_{p} as low as ≃35  MHz. The amount of reduction of f_{p} with increasing d can be explained remarkably well by tails of the wave function impinging into the alloy-disordered Al_{x}Ga_{1-x}As barriers that contain the electrons. However, it is imperative that the model for the confinement and wave function includes the Coulomb repulsion in the growth direction between the electrons as they occupy the quantum well.

Bilayer Quantum Hall States in an n-Type Wide Tellurium Quantum Well

Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n-type doping using atomic layer deposition (ALD) technique on two-dimensional (2D) Te film. In this work, we fabricated and measured the double-gated n-type Te Hall-bar devices, which can operate as two separate or coupled electron layers controlled by the top gate and back gate. Profound Shubnikov-de Haas (SdH) oscillations are observed in both top and bottom electron layers. Landau level hybridization between two layers, compound and charge-transferable bilayer quantum Hall states at filling factor ν = 4, 6, and 8, are analyzed. Our work opens the door for the study of Weyl physics in coupled bilayer systems of 2D materials.

Surface transport and quantum Hall effect in ambipolar black phosphorus double quantum wells

Quantum wells (QWs) constitute one of the most important classes of devices in the study of two-dimensional (2D) systems. In a double-layer QW, the additional "which-layer" degree of freedom gives rise to celebrated phenomena, such as Coulomb drag, Hall drag, and exciton condensation. We demonstrate facile formation of wide QWs in few-layer black phosphorus devices that host double layers of charge carriers. In contrast to traditional QWs, each 2D layer is ambipolar and can be tuned into n-doped, p-doped, or intrinsic regimes. Fully spin-polarized quantum Hall states are observed on each layer, with an enhanced Landé g factor that is attributed to exchange interactions. Our work opens the door for using 2D semiconductors as ambipolar single, double, or wide QWs with unusual properties, such as high anisotropy.

Broken-Symmetry Quantum Hall States in Twisted Bilayer Graphene

Twisted bilayer graphene offers a unique bilayer two-dimensional-electron system where the layer separation is only in sub-nanometer scale. Unlike Bernal-stacked bilayer, the layer degree of freedom is disentangled from spin and valley, providing eight-fold degeneracy in the low energy states. We have investigated broken-symmetry quantum Hall (QH) states and their transitions due to the interplay of the relative strength of valley, spin and layer polarizations in twisted bilayer graphene. The energy gaps of the broken-symmetry QH states show an electron-hole asymmetric behaviour, and their dependence on the induced displacement field are opposite between even and odd filling factor states. These results strongly suggest that the QH states with broken valley and spin symmetries for individual layer become hybridized via interlayer tunnelling, and the hierarchy of the QH states is sensitive to both magnetic field and displacement field due to charge imbalance between layers.

Globally symmetric topological phase: from anyonic symmetry to twist defect

Topological phases in two dimensions support anyonic quasiparticle excitations that obey neither bosonic nor fermionic statistics. These anyon structures often carry global symmetries that relate distinct anyons with similar fusion and statistical properties. Anyonic symmetries associate topological defects or fluxes in topological phases. As the symmetries are global and static, these extrinsic defects are semiclassical objects that behave disparately from conventional quantum anyons. Remarkably, even when the topological states supporting them are Abelian, they are generically non-Abelian and powerful enough for topological quantum computation. In this article, I review the most recent theoretical developments on symmetries and defects in topological phases.

Microwave spectroscopy of the low-filling-factor bilayer electron solid in a wide quantum well

At the low Landau filling factor termination of the fractional quantum Hall effect series, two-dimensional electron systems exhibit an insulating phase that is understood as a form of pinned Wigner solid. Here we use microwave spectroscopy to probe the transition to the insulator for a wide quantum well sample that can support single-layer or bilayer states depending on its overall carrier density. We find that the insulator exhibits a resonance which is characteristic of a bilayer solid. The resonance also reveals a pair of transitions within the solid, which are not accessible to dc transport measurements. As density is biased deeper into the bilayer solid regime, the resonance grows in specific intensity, and the transitions within the insulator disappear. These behaviours are suggestive of a picture of the insulating phase as an emulsion of liquid and solid components.

In 2D electron gases, insulating behaviour at low fractional quantum Hall filling factors is understood by the formation of an electronic Wigner solid. Here, the authors use microwave spectroscopy to evidence an electron liquid–solid mixed phase in bilayer states of GaAs/AlGaAs wide quantum wells.

Enhancement of the ν = 5/2 fractional quantum Hall state in a small in-plane magnetic field

Using a 50-nm-width ultraclean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor ν=5/2 fractional quantum Hall effect in a perpendicular magnetic field B∼1.7  T and determined its dependence on tilted magnetic fields. Contrary to all previous results, the 5/2 resistance minimum and the Hall plateau are found to strengthen continuously under an increasing tilt angle 0<θ<25° (corresponding to an in-plane magnetic field 0<B(∥)<0.8  T). In the same range of θ, the activation gaps of both the 7/3 and the 8/3 states are found to increase with tilt. The 5/2 state transforms into a compressible Fermi liquid upon tilt angle θ>60°, and the composite fermion series [2+p/(2p±1), p=1,2] can be identified. Based on our results, we discuss the relevance of a Skyrmion spin texture at ν=5/2 associated with small Zeeman energy in wide quantum wells, as proposed by Wójs et al. [Phys. Rev. Lett. 104, 086801 (2010)].

Correlated states of electrons in wide quantum wells at low fillings: the role of charge distribution symmetry

Magnetotransport measurements on electrons confined to a 57-nm-wide, GaAs quantum well reveal that the correlated electron states at low Landau level fillings (nu) display a remarkable dependence on the symmetry of the electron charge distribution. At a density of 1.93 x 10;{11} cm;{-2}, a developing fractional quantum Hall state is observed at the even-denominator filling nu = 1/4 when the distribution is symmetric, but it quickly vanishes when the distribution is made asymmetric. At lower densities, as we make the charge distribution asymmetric, we observe a rapid strengthening of the insulating phases that surround the nu = 1/5 fractional quantum Hall state.

Resonantly enhanced tunneling in a double layer quantum hall ferromagnet

The tunneling conductance between two parallel 2D electron systems has been measured in a regime of strong interlayer Coulomb correlations. At total Landau level filling nuT=1 the tunnel spectrum changes qualitatively when the boundary separating the compressible phase from the ferromagnetic quantized Hall state is crossed. A huge resonant enhancement replaces the strongly suppressed equilibrium tunneling characteristic of weakly coupled layers. The possible relationship of this enhancement to the Goldstone mode of the broken symmetry ground state is discussed.