Anharmonic decay time, isotopic scattering time, and inhomogeneous line broadening of optical phonons in 70Ge, 76Ge, and natural Ge crystals

Dynamic disorder, phonon lifetimes, and the assignment of modes to the vibrational spectra of methylammonium lead halide perovskites

Raman and THz spectra of CH₃NH₃PbX₃ interpreted with a catalogue of computed vibrations and their influence on heat and electrical transport.

Fabry-Pérot-multichannel spectrometer tandem for ultra-high resolution Raman spectroscopy

We present a novel ultra-high resolution Raman spectroscopy technique based in a Fabry-Pérot/triple spectrometer tandem with multichannel acquisition. We describe the system, detail the calibration process, and experimentally test the technique, showing that effective finesses in excess of 1000 are possible. The technique is specifically tailored for low intensity, complex and spectrally extended Raman spectra, providing shorter acquisition times with respect to similar tandem systems with monochannel detectors.

Structural preablation dynamics of graphite observed by ultrafast electron crystallography

By means of time-resolved electron crystallography, we report direct observation of the structural dynamics of graphite, providing new insights into the processes involving coherent lattice motions and ultrafast graphene ablation. When graphite is excited by an ultrashort laser pulse, the excited carriers reach their equilibrium in less then one picosecond by transferring heat to a subset of strongly coupled optical phonons. The time-resolved diffraction data show that on such a time scale the crystal undergoes a contraction whose velocity depends on the excitation fluence. The contraction is followed by a large expansion which, at sufficiently high fluence, leads to the ablation of entire graphene layers, as recently predicted theoretically.

Photoluminescence of isotopically purified silicon: how sharp are bound exciton transitions?

We report the first high resolution photoluminescence studies of isotopically pure Si (99.896% (28)Si). New information is obtained on isotopic effects on the indirect band gap energy, phonon energies, and phonon broadenings, which is in good agreement with calculations and previous results obtained in Ge and diamond. Remarkably, the linewidths of the no-phonon boron and phosphorus bound exciton transitions in the (28)Si sample are much narrower than in natural Si and are not well resolved at our maximum instrumental resolution of approximately 0.014 cm(-1). The removal of the dominant broadening resulting from isotopic randomness in natural Si reveals new fine structure in the boron bound exciton luminescence.

Isotope-disorder-induced line broadening of phonons in the Raman spectra of SiC

The width of phonon lines in the Raman spectra of ideal isotopically pure solids is determined by inelastic scattering processes. In solids that contain a mixture of different isotopes of one atomic constituent, elastic scattering due to isotopic mass disorder opens up decay channels that result in additional line broadening. We use different polytypes of SiC with an associated number of Raman active modes in order to experimentally validate the proportionality between linewidth and phonon density of states predicted by a simple elastic scattering theory.