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For: Fois E, Selloni A, Pastore G, Zhang Q, Car R. Structure, electronic properties, and defects of amorphous gallium arsenide. Phys Rev B Condens Matter 1992;45:13378-13382. [PMID: 10001421 DOI: 10.1103/physrevb.45.13378] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Hydrogen and the Light-Induced Bias Instability Mechanism in Amorphous Oxide Semiconductors. Sci Rep 2017;7:16858. [PMID: 29203820 PMCID: PMC5714999 DOI: 10.1038/s41598-017-17290-5] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/13/2017] [Accepted: 11/22/2017] [Indexed: 11/08/2022]  Open
2
Dias Da Silva JH, Cisneros I, Cardoso LP. Crystallization Process and Chemical Disorder in Flash Evaporated Amorphous Gallium Antimonide Films. ACTA ACUST UNITED AC 2011. [DOI: 10.1557/proc-321-645] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022]
3
Seong H, Lewis LJ. Tight-binding molecular-dynamics study of density-optimized amorphous GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:4408-4414. [PMID: 9983994 DOI: 10.1103/physrevb.53.4408] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Seong H, Lewis LJ. Tight-binding molecular-dynamics study of point defects in GaAs. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;52:5675-5684. [PMID: 9981753 DOI: 10.1103/physrevb.52.5675] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
5
Cisneros JI, Guraya MM, Zampieri G. Effect of deviation from stoichiometry and thermal annealing on amorphous gallium antimonide films. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:6272-6279. [PMID: 9977165 DOI: 10.1103/physrevb.51.6272] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
6
Molteni C, Colombo L, Miglio L. Structure and properties of amorphous gallium arsenide by tight-binding molecular dynamics. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;50:4371-4377. [PMID: 9976736 DOI: 10.1103/physrevb.50.4371] [Citation(s) in RCA: 21] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
7
Tersoff J. Chemical order in amorphous silicon carbide. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:16349-16352. [PMID: 10010784 DOI: 10.1103/physrevb.49.16349] [Citation(s) in RCA: 30] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
8
Gilgien L, Galli G, Gygi F, Car R. Ab initio study of positron trapping at a vacancy in GaAs. PHYSICAL REVIEW LETTERS 1994;72:3214-3217. [PMID: 10056136 DOI: 10.1103/physrevlett.72.3214] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
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