Preparation of WSe2 surfaces with high photoactivity

Size-Tuning of WSe2 Flakes for High Efficiency Inverted Organic Solar Cells

The development of large-scale production methods of two-dimensional (2D) crystals, with on-demand control of the area and thickness, is mandatory to fulfill the potential applications of such materials for photovoltaics. Inverted bulk heterojunction (BHJ) organic solar cell (OSC), which exploits a polymer-fullerene binary blend as the active material, is one potentially important application area for 2D crystals. A large ongoing effort is indeed currently devoted to the introduction of 2D crystals in the binary blend to improve the charge transport properties. While it is expected that the nanoscale domains size of the different components of the blend will significantly impact the performance of the OSC, to date, there is no evidence of quantitative information on the interplay between 2D crystals and fullerene domains size. Here, we demonstrate that by matching the size of WSe₂ few-layer 2D crystals, produced by liquid-phase exfoliation, with that of the PC₇₁BM fullerene domain in BHJ OSCs, we obtain power conversion efficiencies (PCEs) of ∼9.3%, reaching a 15% improvement with respect to standard binary devices (PCE = 8.10%), i.e., without the addition of WSe₂ flakes. This is the highest ever reported PCE for 2D material-based OSCs, obtained thanks to the enhanced exciton generation and exciton dissociation at the WSe₂-fullerene interface and also electron extraction to the back metal contact as a consequence of a balanced charge carriers mobility. These results push forward the implementation of transition-metal dichalcogenides to boost the performance of BHJ OSCs.

Preparation and applications of mechanically exfoliated single-layer and multilayer MoS₂ and WSe₂ nanosheets

Although great progress has been achieved in the study of graphene, the small current ON/OFF ratio in graphene-based field-effect transistors (FETs) limits its application in the fields of conventional transistors or logic circuits for low-power electronic switching. Recently, layered transition metal dichalcogenide (TMD) materials, especially MoS2, have attracted increasing attention. In contrast to its bulk material with an indirect band gap, a single-layer (1L) MoS2 nanosheet is a semiconductor with a direct band gap of ~1.8 eV, which makes it a promising candidate for optoelectronic applications due to the enhancement of photoluminescence and high current ON/OFF ratio. Compared with TMD nanosheets prepared by chemical vapor deposition and liquid exfoliation, mechanically exfoliated ones possess pristine, clean, and high-quality structures, which are suitable for the fundamental study and potential applications based on their intrinsic thickness-dependent properties. In this Account, we summarize our recent research on the preparation, characterization, and applications of 1L and multilayer MoS2 and WSe2 nanosheets produced by mechanical exfoliation. During the preparation of nanosheets, we proposed a simple optical identification method to distinguish 1L and multilayer MoS2 and WSe2 nanosheets on a Si substrate coated with 90 and 300 nm SiO2. In addition, we used Raman spectroscopy to characterize mechanically exfoliated 1L and multilayer WSe2 nanosheets. For the first time, a new Raman peak at 308 cm(-1) was observed in the spectra of WSe2 nanosheets except for the 1L WSe2 nanosheet. Importantly, we found that the 1L WSe2 nanosheet is very sensitive to the laser power during characterization. The high power laser-induced local oxidation of WSe2 nanosheets and single crystals was monitored by Raman spectroscopy and atomic force microscopy (AFM). Hexagonal and monoclinic structured WO3 thin films were obtained from the local oxidization of single- to triple-layer (1L-3L) and quadruple- to quintuple-layer (4L-5L) WSe2 nanosheets, respectively. Then, we present Raman characterization of shear and breathing modes of 1L and multilayer MoS2 and WSe2 nanosheets in the low frequency range (<50 cm(-1)), which can be used to accurately identify the layer number of nanosheets. Magnetic force microscopy was used to characterize 1L and multilayer MoS2 nanosheets, and thickness-dependent magnetic response was found. In the last part, we briefly introduce the applications of 1L and multilayer MoS2 nanosheets in the fields of gas sensors and phototransistors.

Mechanical exfoliation and characterization of single- and few-layer nanosheets of WSe₂ , TaS₂ , and TaSe₂

Single- and few-layer transition-metal dichalcogenide nanosheets, such as WSe₂ , TaS₂, and TaSe₂, are prepared by mechanical exfoliation. A Raman microscope is employed to characterize the single-layer (1L) to quinary-layer (5L) WSe₂ nanosheets and WSe₂ single crystals with a laser excitation power ranging from 20 μW to 5.1 mW. Typical first-order together with some second-order and combinational Raman modes are observed. A new peak at around 308 cm⁻¹ is observed in WSe₂ except for the 1L WSe₂, which might arise from interlayer interactions. Red shifting of the A(1g) mode and the Raman peak around 308 cm⁻¹ is observed from 1L to 5L WSe₂. Interestingly, hexagonal- and monoclinic-structured WO₃ thin films are obtained during the local oxidation of thinner (1L-3L) and thicker (4L and 5L) WSe₂ nanosheets, while laser-burned holes are found during the local oxidation of the WSe₂ single crystal. In addition, the characterization of TaS₂ and TaSe₂ thin layers is also conducted.

Hydrogen evolution from Pt/Ru-coated p-type WSe2 photocathodes

Crystalline p-type WSe(2) has been grown by a chemical vapor transport method. After deposition of noble metal catalysts, p-WSe(2) photocathodes exhibited thermodynamically based photoelectrode energy-conversion efficiencies of >7% for the hydrogen evolution reaction under mildly acidic conditions, and were stable under cathodic conditions for at least 2 h in acidic as well as in alkaline electrolytes. The open circuit potentials of the photoelectrodes in contact with the H(+)/H(2) redox couple were very close to the bulk recombination/diffusion limit predicted from the Shockley diode equation. Only crystals with a prevalence of surface step edges exhibited a shift in flat-band potential as the pH was varied. Spectral response data indicated effective minority-carrier diffusion lengths of ∼1 μm, which limited the attainable photocurrent densities in the samples to ∼15 mA cm(-2) under 100 mW cm(-2) of Air Mass 1.5G illumination.