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For: Baber N, Scheffler H, Ostmann A, Wolf T, Bimberg D. Field effect on electron emission from the deep Ti donor level in InP. Phys Rev B Condens Matter 1992;45:4043-4047. [PMID: 10002016 DOI: 10.1103/physrevb.45.4043] [Citation(s) in RCA: 16] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
Number Cited by Other Article(s)
1
Bouzrara L, Ajjel R, Mejri H, Zaidi M, Maaref H. Electric field effect on the electron emission from Te-DX in AlxGa1−xAs. MATERIALS SCIENCE & ENGINEERING. C, MATERIALS FOR BIOLOGICAL APPLICATIONS 2006. [DOI: 10.1016/j.msec.2005.10.002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
2
Ajjel R, Zaı̈di M, Maaref H, Zerraı̈ A, Brémond G, Ulrici W. Electrical field effect on both thermal ionization energy and optical threshold energy of the Cr3+/4+ deep donor level in GaP. MATERIALS SCIENCE & ENGINEERING. C, MATERIALS FOR BIOLOGICAL APPLICATIONS 2002. [DOI: 10.1016/s0928-4931(02)00088-7] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
3
Yang X, Chen X, Qiu J, Tian Q, Li Z, Zeng Y. Band bending within inhomogeneously doped semiconductors with multilevel impurities. II. Examples. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:13419-13426. [PMID: 9983087 DOI: 10.1103/physrevb.53.13419] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
4
Dadgar A, Ammerlahn D, Näser A, Heitz R, Kuttler M, Bimberg D, Baber N, Hyeon JY, Schumann H. Deep-level transient-spectroscopy study of rhodium in indium phosphide. PHYSICAL REVIEW. B, CONDENSED MATTER 1996;53:7190-7196. [PMID: 9982166 DOI: 10.1103/physrevb.53.7190] [Citation(s) in RCA: 13] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
5
Scheffler H, Baber N, Dadgar A, Bimberg D, Winterfeld J, Schumann H. Deep levels in hafnium- and zirconium-doped indium phosphide. PHYSICAL REVIEW. B, CONDENSED MATTER 1995;51:14142-14146. [PMID: 9978341 DOI: 10.1103/physrevb.51.14142] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
6
Csaszar W, Endrös AL. Anomalous electronic properties of a hydrogen-related deep donor in c-Si. PHYSICAL REVIEW LETTERS 1994;73:312-315. [PMID: 10057138 DOI: 10.1103/physrevlett.73.312] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
7
Srocka B, Scheffler H, Bimberg D. Fe2+-Fe3+ level as a recombination center in In0.53Ga0.47As. PHYSICAL REVIEW. B, CONDENSED MATTER 1994;49:10259-10268. [PMID: 10009846 DOI: 10.1103/physrevb.49.10259] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
8
Tilly LP, Grimmeiss HG, Hansson PO. Copper-related defects in In0.53Ga0.47As grown by liquid-phase epitaxy. PHYSICAL REVIEW. B, CONDENSED MATTER 1993;47:1249-1255. [PMID: 10006132 DOI: 10.1103/physrevb.47.1249] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
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