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Effect of Substrate Misorientation on the Structural and Optical Characteristics of In-Rich InGaAs/GaAsP Quantum Wells. APPLIED SCIENCES-BASEL 2021. [DOI: 10.3390/app11188639] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
InGaAs quantum well (QW) lasers have attracted significant attention owing to their considerable potential for applications in optical communications; however, the relationship between the misorientation of the substrates used to grow InGaAs QWs and the structural and optical properties of QWs is still ambiguous. In this study, In-rich InGaAs/GaAsP single QWs were grown in the same run via metal organic chemical vapor deposition on GaAs (001) substrates misoriented by 0°, 2°, and 15° toward (111). The effects of substrate misorientation on the crystal quality and structural properties of InGaAs/GaAsP were investigated by X-ray diffraction and Raman spectroscopy. The 0° substrate exhibited the least lattice relaxation, and with increasing misorientation, the degree of lattice relaxation increased. The optical properties of the InGaAs/GaAsP QWs were investigated using temperature-dependent photoluminescence. An abnormal S-shaped variation of the peak energy and inverse evolution of the spectral bandwidth were observed at low temperatures for the 2° substrate, caused by the localization potentials due to the In-rich clusters. Surface morphology observations revealed that the growth mode varied with different miscuts. Based on the experimental results obtained in this study, a mechanism elucidating the effect of substrate miscuts on the structural and optical properties of QWs was proposed and verified.
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Berg A, Heurlin M, Tsopanidis S, Pistol ME, Borgström MT. Growth of wurtzite Al x Ga 1-x P nanowire shells and characterization by Raman spectroscopy. NANOTECHNOLOGY 2017; 28:035706. [PMID: 27966463 DOI: 10.1088/1361-6528/28/3/035706] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The phonon energies of AlGaP in wurtzite crystal structure are generally not known, as opposed to their zincblende counterparts, because AlGaP crystallizes in zincblende phase in bulk and thin films structures. However, in nanowires AlGaP can be grown in wurtzite crystal structure. In this work we have grown wurtzite GaP/AlGaP/GaP core-shell nanowires by use of MOVPE. After developing suitable growth conditions, the Al composition was determined by STEM-EDX measurements and the wurtzite AlGaP phonon energies by Raman spectroscopy. Raman measurements show a peak shift with increasing Al composition in the AlGaP shell. We find that the phonon energies for wurtzite AlGaP are slightly lower than for zincblende AlGaP. Our results can be used to determine the Al composition in wurtzite AlGaP by Raman scattering.
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Affiliation(s)
- Alexander Berg
- Solid State Physics and NanoLund, Lund University, Box 118, SE-221 00, Lund, Sweden
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Dong H, Sun J, Ma S, Liang J, Lu T, Jia Z, Liu X, Xu B. Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode. Phys Chem Chem Phys 2016; 18:6901-12. [PMID: 26879291 DOI: 10.1039/c5cp07805a] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The growth and strain-compensation behaviour of InGaAs/GaAsP multi-quantum wells, which were fabricated by metal-organic chemical vapor deposition, have been studied towards the application of these quantum wells in high-power laser diodes. The effect of the height of the potential barrier on the confined level of carrier transport was studied by incorporating different levels of phosphorus content into the GaAsP barrier. The crystal quality and interface roughness of the InGaAs/GaAsP multi-quantum wells with different phosphorus contents were evaluated by high resolution X-ray diffraction and in situ optical surface reflectivity measurements during the growth. The surface morphology and roughness were characterized by atomic force microscopy, which indicates the variation law of surface roughness, terrace width and uniformity with increasing phosphorus content, owing to strain accumulation. Moreover, the defect generation and structural disorder of the multi-quantum wells were investigated by Raman spectroscopy. The optical properties of the multi-quantum wells were characterized by photoluminescence, which shows that the spectral intensity increases as the phosphorus content increases. The results suggest that more electrons are well bound in InGaAs because of the high potential barrier. Finally, the mechanism of the effect of the height of the potential barrier on laser performance was proposed on the basis of simulation calculations and experimental results.
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Affiliation(s)
- Hailiang Dong
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China. and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, Shanxi 030024, P. R. China
| | - Jing Sun
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China. and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, Shanxi 030024, P. R. China
| | - Shufang Ma
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China. and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, Shanxi 030024, P. R. China
| | - Jian Liang
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China. and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, Shanxi 030024, P. R. China
| | - Taiping Lu
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China. and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, Shanxi 030024, P. R. China
| | - Zhigang Jia
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China. and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, Shanxi 030024, P. R. China
| | - Xuguang Liu
- College of Chemistry and Chemical Engineering, Taiyuan University of Technology, Taiyuan, Shanxi 030024, P. R. China
| | - Bingshe Xu
- Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education, Taiyuan, Shanxi 030024, P. R. China. and Research Center of Advanced Materials Science and Technology, Taiyuan University of Technology, Taiyuan, Shanxi 030024, P. R. China
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Shan W, Hwang SJ, Song JJ, Hou HQ, Tu CW. High-pressure photoluminescence study of GaAs/GaAs1-xPx strained multiple quantum wells. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 47:3765-3770. [PMID: 10006480 DOI: 10.1103/physrevb.47.3765] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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