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Astley S, Hu D, Hazeldine K, Ash J, Cross RE, Cooil S, Allen MW, Evans J, James K, Venturini F, Grinter DC, Ferrer P, Arrigo R, Held G, Williams GT, Evans DA. Identifying chemical and physical changes in wide-gap semiconductors using real-time and near ambient-pressure XPS. Faraday Discuss 2022; 236:191-204. [PMID: 35510538 DOI: 10.1039/d1fd00119a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Photoelectron spectroscopy is a powerful characterisation tool for semiconductor surfaces and interfaces, providing in principle a correlation between the electronic band structure and surface chemistry along with quantitative parameters such as the electron affinity, interface potential, band bending and band offsets. However, measurements are often limited to ultrahigh vacuum and only the top few atomic layers are probed. The technique is seldom applied as an in situ probe of surface processing; information is usually provided before and after processing in a separate environment, leading to a reduction in reproducibility. Advances in instrumentation, in particular electron detection has enabled these limitations to be addressed, for example allowing measurement at near-ambient pressures and the in situ, real-time monitoring of surface processing and interface formation. A further limitation is the influence of the measurement method through irreversible chemical effects such as radiation damage during X-ray exposure and reversible physical effects such as the charging of low conductivity materials. For wide-gap semiconductors such as oxides and carbon-based materials, these effects can be compounded and severe. Here we show how real-time and near-ambient pressure photoelectron spectroscopy can be applied to identify and quantify these effects, using a gold alloy, gallium oxide and semiconducting diamond as examples. A small binding energy change due to thermal expansion is followed in real-time for the alloy while the two semiconductors show larger temperature-induced changes in binding energy that, although superficially similar, are identified as having different and multiple origins, related to surface oxygen bonding, surface band-bending and a room-temperature surface photovoltage. The latter affects the p-type diamond at temperatures up to 400 °C when exposed to X-ray, UV and synchrotron radiation and under UHV and 1 mbar of O2. Real-time monitoring and near-ambient pressure measurement with different excitation sources has been used to identify the mechanisms behind the observed changes in spectral parameters that are different for each of the three materials. Corrected binding energy values aid the completion of the energy band diagrams for these wide-gap semiconductors and provide protocols for surface processing to engineer key surface and interface parameters.
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Affiliation(s)
- Simon Astley
- Department of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, UK.
| | - Di Hu
- Department of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, UK.
| | - Kerry Hazeldine
- Department of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, UK.
| | - Johnathan Ash
- Department of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, UK.
| | - Rachel E Cross
- Department of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, UK.
| | - Simon Cooil
- Department of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, UK. .,Centre for Materials Science and Nanotechnology, University of Oslo, Oslo, 0318, Norway
| | - Martin W Allen
- Department of Electrical and Computer Engineering, University of Canterbury, Christchurch 8014, New Zealand
| | - James Evans
- Diamond Centre Wales Ltd, Talbot Green, RCT, CF72 9FG, UK
| | - Kelvin James
- Diamond Centre Wales Ltd, Talbot Green, RCT, CF72 9FG, UK
| | - Federica Venturini
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot, OX11 0DE, UK
| | - David C Grinter
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot, OX11 0DE, UK
| | - Pilar Ferrer
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot, OX11 0DE, UK
| | - Rosa Arrigo
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot, OX11 0DE, UK
| | - Georg Held
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot, OX11 0DE, UK
| | | | - D Andrew Evans
- Department of Physics, Aberystwyth University, Aberystwyth SY23 3BZ, UK.
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Zhu WH, Huang ZK, Bo ML, Huang J, Peng C, Liu H. Surface, size and thermal effects in alkali metal with core-electron
binding-energy shifts. CHINESE J CHEM PHYS 2021. [DOI: 10.1063/1674-0068/cjcp2011192] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022]
Affiliation(s)
- Wen-huan Zhu
- National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zhong-kai Huang
- Key Laboratory of Inorganic Special Functional Materials of Chongqing, Yangtze Nromal University, Chongqing 408100, China
- Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing, Yangtze Normal University, Chongqing 408100,
China
- School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715,
China
| | - Mao-lin Bo
- Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing, Yangtze Normal University, Chongqing 408100,
China
| | - Jin Huang
- School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715,
China
| | - Cheng Peng
- Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing, Yangtze Normal University, Chongqing 408100,
China
| | - Hai Liu
- Key Laboratory of Advanced Display and System Applications of Ministry of Education, Shanghai University, Shanghai 200072, China
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Bo M, Guo Y, Wang Y, Liu Y, Peng C, Sun CQ, Huang Y. Electronic binding energy and thermal relaxation of Li and LiNa atomic alloying clusters. Phys Chem Chem Phys 2016; 18:13280-6. [DOI: 10.1039/c6cp01783e] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We examined the effects of atomic hetero- and under-coordination on the relaxation of the interatomic bonding and electronic binding energy of Li and LiNa cluster alloying using a combination of the bond-order-length-strength correlation and density functional theory calculations.
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Affiliation(s)
- Maolin Bo
- College of Mechanical and Electrical Engineering
- Yangtze Normal University
- Chongqing 408100
- China
- Key Laboratory of Low-Dimensional Materials and Application Technologies (Ministry of Education)
| | - Yongling Guo
- Key Laboratory of Low-Dimensional Materials and Application Technologies (Ministry of Education)
- Hunan Provincial Key Laboratory of Thin Film Materials and Devices
- Faculty of Materials Science and Engineering
- Xiangtan University
- Hunan 411105
| | - Yan Wang
- School of Information and Electronic Engineering
- Hunan University of Science and Technology
- Hunan 411201
- China
| | - Yonghui Liu
- Key Laboratory of Low-Dimensional Materials and Application Technologies (Ministry of Education)
- Hunan Provincial Key Laboratory of Thin Film Materials and Devices
- Faculty of Materials Science and Engineering
- Xiangtan University
- Hunan 411105
| | - Cheng Peng
- College of Mechanical and Electrical Engineering
- Yangtze Normal University
- Chongqing 408100
- China
| | - Chang Q. Sun
- NOVITAS
- School of Electrical and Electronic Engineering
- Nanyang Technological University
- Singapore 639798
- Singapore
| | - Yongli Huang
- Key Laboratory of Low-Dimensional Materials and Application Technologies (Ministry of Education)
- Hunan Provincial Key Laboratory of Thin Film Materials and Devices
- Faculty of Materials Science and Engineering
- Xiangtan University
- Hunan 411105
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Santucci SC, Goldoni A, Larciprete R, Lizzit S, Bertolo M, Baraldi A, Masciovecchio C. Calorimetry at surfaces using high-resolution core-level photoemission. PHYSICAL REVIEW LETTERS 2004; 93:106105. [PMID: 15447425 DOI: 10.1103/physrevlett.93.106105] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2004] [Indexed: 05/24/2023]
Abstract
We have developed a method to measure simultaneously the internal energy of bulk and the first layer atoms of a crystal. The internal energy of bulk and the surface atoms of lithium (110) have been evaluated from 22 K up to above the melting transition, applying the Debye model to the thermal broadening of the respective 1s photoemission lines. Our measurements clearly reveal two phase changes: the known liquid to solid transition and the surface melting, occurring 50 K below the bulk melting point.
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Affiliation(s)
- S C Santucci
- Dipartimento di Fisica, Università di Perugia, Via A. Pascoli, 06123 Perugia, Italy
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Joyce JJ, Andrews AB, Arko AJ, Bartlett RJ, Blythe RI, Olson CG, Benning PJ, Canfield PC, Poirier DM. Photoelectron spectroscopy of strongly correlated Yb compounds. PHYSICAL REVIEW. B, CONDENSED MATTER 1996; 54:17515-17535. [PMID: 9985876 DOI: 10.1103/physrevb.54.17515] [Citation(s) in RCA: 24] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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Weitering HH, Chen J, DiNardo NJ, Plummer EW. Electron correlation, metallization, and Fermi-level pinning at ultrathin K/Si(111) interfaces. PHYSICAL REVIEW. B, CONDENSED MATTER 1993; 48:8119-8135. [PMID: 10007002 DOI: 10.1103/physrevb.48.8119] [Citation(s) in RCA: 51] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/12/2023]
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