Dicarlo L, Williams JR, Zhang Y, McClure DT, Marcus CM. Shot noise in graphene.
PHYSICAL REVIEW LETTERS 2008;
100:156801. [PMID:
18518138 DOI:
10.1103/physrevlett.100.156801]
[Citation(s) in RCA: 8] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2007] [Indexed: 05/26/2023]
Abstract
We report measurements of current noise in single-layer and multilayer graphene devices. In four single-layer devices, including a p-n junction, the Fano factor remains constant to within +/-10% upon varying carrier type and density, and averages between 0.35 and 0.38. The Fano factor in a multilayer device is found to decrease from a maximal value of 0.33 at the charge-neutrality point to 0.25 at high carrier density. These results are compared to theories for shot noise in ballistic and disordered graphene.
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