Influence of Al content in the barrier on the optical properties of GaAs/AlxGa1-xAs (x=0.1-1) multiple-quantum-well structures

Photoluminescence up-conversion in single self-assembled InAs/GaAs quantum dots

Microphotoluminescence measurements under cw excitation reveal the existence of a strong photoluminescence up-conversion from single InAs/GaAs self-assembled quantum dots and also from the InAs wetting layer. Excitation spectroscopy of the up-converted photoluminescence signal shows identical features from the wetting layer and the single quantum dots, i.e., a band tail coming from the deep states localized at the rough interfaces of the wetting layer quantum well. This observation of photoluminescence up-conversion demonstrates the influence on the quantum dot properties of the environment, and highlights the limitations of the artificial atom model for a semiconductor quantum dot.