Kammerer C, Cassabois G, Voisin C, Delalande C, Roussignol P, Gérard JM. Photoluminescence up-conversion in single self-assembled InAs/GaAs quantum dots.
PHYSICAL REVIEW LETTERS 2001;
87:207401. [PMID:
11690509 DOI:
10.1103/physrevlett.87.207401]
[Citation(s) in RCA: 15] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2001] [Indexed: 05/23/2023]
Abstract
Microphotoluminescence measurements under cw excitation reveal the existence of a strong photoluminescence up-conversion from single InAs/GaAs self-assembled quantum dots and also from the InAs wetting layer. Excitation spectroscopy of the up-converted photoluminescence signal shows identical features from the wetting layer and the single quantum dots, i.e., a band tail coming from the deep states localized at the rough interfaces of the wetting layer quantum well. This observation of photoluminescence up-conversion demonstrates the influence on the quantum dot properties of the environment, and highlights the limitations of the artificial atom model for a semiconductor quantum dot.
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