Janotti A, Zhang SB, Wei SH, Van de Walle CG. Effects of hydrogen on the electronic properties of dilute GaAsN alloys.
PHYSICAL REVIEW LETTERS 2002;
89:086403. [PMID:
12190488 DOI:
10.1103/physrevlett.89.086403]
[Citation(s) in RCA: 8] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2002] [Indexed: 05/23/2023]
Abstract
Nitrogen has profound effects on the electronic structure of GaAs, as only a few percent of N can drastically lower the band gap. It is, however, not recognized that the same amount of N can also qualitatively alter the electronic behavior of hydrogen: First-principles calculations reveal that, in GaAsN, a H atom bonds to N and can act as a donor in its own right, whereas in GaAs and GaN, H is amphoteric, causing passivation instead. At high Fermi energy and H concentration, a N complex with two H was found to have lower energy than the single-H configuration. By removing the effect of N, this electrically inactive complex restores the gap of GaAs.
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